• Proceedings of the KIEE Conference
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• 1997.07f
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• pp.2243-2245
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• 1997

With the increasing demands for clean environment, development of air cleaning systems has been received increasing attention. EP is usually used for air cleaning in the coal power plant. One of the key technology in the EP is high voltage pulse power supply, which affects the performance of the overall system. In this study, high voltage micro pulse power supply for the EP will be developed for a 500MW coal power plant, which is recently developed technology in the advanced nations. The technology developed will contribute in upbringing the export of heavy electric systems and production of high value-added products.

• Proceedings of the KIEE Conference
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• 1999.07f
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• pp.2623-2625
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• 1999

With the increasing demands for clean environment, development of air cleaning systems has been received increasing attention. EP is usually used for air cleaning in the coal power plant. One of the key technology in the EP is high voltage pulse power supply, which affects the performance of the overall system. In this study, high voltage micro pulse power supply for the pilot EP is developed. The power supply has a de source and a pulse one. The ratings of the dc and pulse source are 60kV and 70kV respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.88-89
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• 2009

In this paper, we investigated about wet cleaning effect as deep trench formation methods for Power chip devices. Deep trench structure was classified by two methods, PSU (Poly Stick Up) and Non-PSU structure. In this paper, we could remove residue defect during wet. cleaning after deep trench etch process for non-PSU structure device as to change wet cleaning process condition. V-SEM result showed void image at the trench bottom site due to residue defect and residue component was oxide by EDS analysis. In order to find the reason of happening residue defect, we experimented about various process conditions. So, defect source was that oxide film was re-deposited at trench bottom by changed to hydrophobic property at substrate during hard mask removal process. Therefore, in order to removal residue defect, we added in-situ SCI during hard mask removal process, and defect was removed perfectly. And WLR (Wafer Level Reliability) test result was no difference between normal and optimized process condition.

• Journal of Energy Engineering
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• v.28 no.1
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• pp.57-64
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• 2019

In this study, the blasting nozzle for surface treatment of the curved surface of parts in power plant industry was designed and the cleaning performance was examined through the compressible flow analysis. At this time, the outlet of the curved nozzle was designed as a curved surface along the surface of the part. After the nozzle was made by 3-D printing, the abrasive was sprayed on the surface of the cylindrical specimen and the cleaning performance test was performed. The effective cleaning area obtained after the analysis was similar to the size and shape of the effective cleaning area obtained after the experiment. From this, the validity and effectiveness of the curved nozzle design was confirmed.

• Journal of the Semiconductor & Display Technology
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• v.22 no.2
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• pp.17-23
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• 2023

In semiconductor manufacturing processes, a cleaning process is important that can remove sub-micron particles. Conventional wet cleaning methods using chemical have limits in removing nano-particles. Thus, physical forces of a mechanical vibration up to 1 MHz frequency, was tried to aid in detaching them from the substrates. In this article, we developed a 1 MHz quartz megasonic for a bare wafer cleaning using finite element analysis. At first, a 1 MHz megasonic prototype was manufactured. Using the results, a main product which can improve a particle removal performance, was analyzed and designed. The maximum impedance frequency was 992 kHz, which agreed well with the experimental value of 986 kHz (0.6% error). Acoustic pressure distributions were measured, and the result showed that maximum / average was 400.0~432.4%, and standard deviation / average was 46.4~47.3%. Finally, submicron particles were deposited and cleaned for the assessment of the system performance. As a result, the particle removal efficiency (PRE) was proved to be 92% with 11 W power. Reflecting these results, the developed product might be used in the semiconductor cleaning process.

• Proceedings of the KIPE Conference
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• 2003.07a
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• pp.260-263
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• 2003

When ICP(Inductive Coupled Plasma type etching and wafer manufacturing is being processed in semiconductor process, a noxious gas in PFC and CFC system is generated. Gas cleaning dry scrubber is to remove this noxious gas. This paper describes a power source device, 2MHz switching frequency class 2kW RF Generator, used as a main power source of the gas cleaning dry scrubber. The power stage of DC/DC converter is consist of full bridge type converter with 100kHz switching frequency Power amplifier is push pull type inverter with 2MHz switching frequency, and transmission line transformer. The adequacy of the circuit type and the reliability of generating plasma in various load conditions are verified through 50$\Omega$ dummy load and chamber experiments result.

• Progress in Superconductivity and Cryogenics
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• v.23 no.3
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• pp.14-19
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• 2021

The reduction of carbon dioxide emissions becomes a global issue, the main source of carbon dioxide emissions in the Asian region is the energy conversion sector, especially coal-fired power plants. We are working to develop technologies that will at least limit the increase in carbon dioxide emissions from the thermal power plants as one way to reduce carbon dioxide emissions. Our research aims to reduce carbon dioxide emissions by removing iron oxide scale from the feedwater system of thermal power plants using a superconducting high-gradient magnetic separation (HGMS) system, thereby reducing the loss of power generation efficiency. In this paper, the background of thermal power plants in Asia is outlined, followed by a case study of the introduction of a chemical cleaning line at an actual thermal power plant in Japan, and the possibility of introducing it into the thermal power plants in China based on the results.

• Clean Technology
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• v.7 no.3
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• pp.203-214
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• 2001

A silicon oxide cleaning characteristic and its mechanism were studied in RF plasma cleaning system with various gases such as $CHF_3$, $CF_4$, Argon, oxygen and mixing gas. The experimental parameters - working pressure (100 mTorr), RF power (300 W, 500 W), electrode distance (5cm, 8cm, 11.5cm), cleaning time (90, 180 seconds), gas flow (50 sccm) were fixed to compare cleaning efficiency by gas types. The results were as follows. First, the argon plasma is retaining only physical sputtering effect and etch rate was low. Second, the oxygen plasma showed good cleaning efficiency in electrode distace of 5cm, 300W, 180secs, but surface roughness increased. Third, $CF_4$ Plasma could get the best cleaning efficiency. Fourth, $CHF_3$ plasma could know that addition gas that can lower the CFx/F ratio need. We could not get good cleaning efficiency in case of added argon to $CHF_3$. But, we could get good cleaning efficiency in case added oxygen.

• Clean Technology
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• v.3 no.2
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• pp.36-46
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• 1997

CFC and organic chlorine solvents has been used in the fine machinery and electronics industries for a long time since they have various excellent properties as cleaning agents. However, it is inevitable that alternative cleaning agents should be used since CFC and organic chlorine solvents were identified as ozone-depleting chemicals. There are various alternative cleaning agents. Among them, aqueous/semi-aqueous cleaning agents are environmentally friendly and promising in the long term. And their use and developement are on the increase in advanced countries, but few in our countries. In this paper, the charactistics and major components aqueous/semi-aqueous cleaning agents are analyzed and compared. And various cleaning equipments for aqueous/semi-aqueous cleaning agents such as immersion cleaner, ultronsonic cleaners, power spray cleaner, and vibration or rotational cleaners are compared and evaluated. Finally, important consideration points for selction of a cleaning system are analyzed and suggested in this paper.

• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.21-27
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• 2023

In this article, a plate-type megasonic cleaning system with cooling pins is proposed for the sliced ingot, which is a raw material of silicon (Si) wafers. The megasonic system is operated with a lead zirconate titanate (PZT) actuator, which has high electric resistance, thus when it is being operated, it dissipates much heat. So this article proposes a megasonic system with cooling pins. In the design process, finite element analysis was performed and the results were used for the design of the waveguide. The frequency with the maximum impedance value was 998 kHz, which agreed well with the measured value of 997 kHz with 0.1 % error. Based on the results, the 1 MHz waveguide was fabricated. Acoustic pressures were measured, and analyzed. Finally, cleaning tests were performed, and 90 % particle removal efficiency (PRE) was achieved over 10 W power. These results imply that the developed 1 MHz megasonic will effectively clean sliced ingot wafer surfaces.