• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.3
• /
• pp.280-286
• /
• 2006

As a way to expand electric capacity in conductor with electric power demand, STACIR/AW (Super Thermal-resistant Aluminum-alloy Conductors Aluminum-clad Invar-Reinforced) conductor which has high electric current and heat resistance characteristics have been developed. STACIR/AW power line is mechanical composite wire composed of steel cores for dip control and aluminum conductors for sending electric current. Recently, to ensure stable operation and prediction of wire life span of STACIR/AW conductor, a heat property of STACIR/AW conductor have been investigated. In the present work, a change of essential property with long term-heat exposure of STACIR/AW conductor and its structure material, INVAR wire and Al conductor, have been investigated. INVAR/AW is approximately $3.2\;{\mu}m/m^{\circ}C$. thermal expansion coefficient of INVAR/AW wire increases with time of heat exposure. the thermal expansion coefficient of INVAR/AW is markedly influenced by heat and mechanical treatment. creep rate(0.242) of STACIR/AW $410\;mm^2$ conductor at room temperature is much higher than that(0.022) at $210\;^{\circ}C$ STACIR/AW $410\;mm^2$ conductor has minimum creep rate at operating temperature. To lower creep rate with increase temperature is more unique characteristics in STACIR/AW. It is expected that STACIR/AW turned its tension to INVAR/AW at the transition temperature. at room temperature, the tension apportionment of INVAR/AW in STACIR/AW is about $50\;\%$. but whole tension of STACIR/AW is placed on the INVAR/AW alone of core metal above transition temperature.

• Korean Journal of Metals and Materials
• /
• v.49 no.8
• /
• pp.657-663
• /
• 2011

This study represents the results of the peel strength and surface morphology according to the preprocessing times of polyimide (PI) in a Cu/Ni/PI structure flexible copper clad laminate production process based on the polyimide. Field emission scanning electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy were used to analyze the surface morphology, crystal structure, and interface binding structure of sputtered Ni, Cu, and electrodeposited copper foil layers. The surface roughness of Ni, Cu deposition layers and the crystal structure of electrodeposited Cu layers were varied according to the preprocessing times. In the RF plasma times that were varied by 100-600 seconds in a preprocessing process, the preprocessing applied by about 300-400 seconds showed a homogeneous surface morphology in the metal layers and that also represented high peel strength for the polyimide. Considering the effect of peel strength on plastic deformation, preprocessing times can reasonably be at about 400 seconds.

• Corrosion Science and Technology
• /
• v.20 no.5
• /
• pp.308-314
• /
• 2021

Neutron dose level at bottom head of a reactor pressure vessel (RPV) was calculated using reactor vessel neutron transport for a Korean nuclear power plant A. At 34 EFPY with a 40-year (2042) design life after plating repair, irradiation fast neutron effect was 6.6x10¹⁵ n/cm². As helium(He) gas can be generated by Ni only at 1/10⁶ level of 5 × 10²¹ n/cm², He generation possibility in the Ni plating layer is very little during 40 years of operation (2042, 34 EFPY). Thermal neutrons can significantly affect the generation of He from Ni metal. At 10 years after a repair, He can be generated at a level of about 0.06 appm, a level that can add general welding repair without any consideration. After 40 years of repair, 9.8 appm of He may be generated. Although this is a rather high value, it is within the range of 0.1 to 10 appm when welding repair can be applied. Clad repair by Ni electroplating technology is expected to greatly improve the operation efficiency by improving the safety and shortening the maintenance period of the nuclear power plant.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.47 no.4
• /
• pp.69-74
• /
• 2010

A new package substrate for dynamic random access memory(DRAM) devices has been developed using selective aluminum anodization. Unlike the conventional substrate structure commonly made by laminating epoxy-based core and copper clad, this substrate consists of bottom aluminum, middle anodic aluminum oxide and top copper. Anodization process on the aluminum substrate provides thick aluminum oxide used as a dielectric layer in the package substrate. Placing copper traces on the anodic aluminum oxide layer, the resulting two-layer metal structure is completed in the package substrate. Selective anodization process makes it possible to construct a fully filled via structure. Also, putting vias directly in the bonding pads and the ball pads in the substrate design, via in pad structure is applied in this work. These arrangement of via in pad and two-layer metal structure make routing easier and thus provide more design flexibility. In a substrate design, all signal lines are routed based on the transmission line scheme of finite-width coplanar waveguide or microstrip with a characteristic impedance of about $50{\Omega}$ for better signal transmission. The property and performance of anodic alumina based package substrate such as layer structure, design method, fabrication process and measurement characteristics are investigated in detail.