• 전력전자학회논문지
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• 제20권2호
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• pp.160-166
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• 2015

This study proposes an improved cell balancing circuit for fast equalization among lithium-ion (Li-ion) batteries. A simple voltage sensorless charge balancing circuit has been proposed in the past. This cell balancing circuit automatically transfers energy from high-to low-voltage battery cells. However, the circuit requires a switch with low on-resistance because the balancing speed is limited by the on-resistance of the switch. Balancing speed decreases as the voltage difference among the battery cells decrease. In this study, the balancing speed of the cell balancing circuit is enhanced by using the auxiliary circuit, which boosts the balancing current. The charging current is determined by the nominal battery cell voltage and thus, the balancing speed is almost constant despite the very small voltage differences among the batteries. Simulation results are provided to verify the validity of the proposed cell balancing circuit.

• 한국전기전자재료학회논문지
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• 제13권4호
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• pp.273-279
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• 2000

Electrical repair method which has replaced laser repair method can replace defective cell by redundancy’s in the redundancy scheme of conventional high density memory. This electrical repair circuit consists of the antifuse program/read/latch circuits, a clock generator a negative voltage generator a power-up pulse circuit a special address mux and etc. The measured program voltage of made antifuses was 7.2~7.5V and the resistance of programmed antifuses was below 500 Ω. The period of clock generator was about 30 ns. The output voltage of a negative voltage generator was about 4.3 V and the current capacity was maximum 825 $mutextrm{A}$. An antifuse was programmed using by the electric potential difference between supply-voltage (3.3 V) and output voltage generator. The output pulse width of a power-up pulse circuit was 30 ns ~ 1$mutextrm{s}$ with the variation of power-up time. The programmed antifuse resistance required below 44 ㏀ from the simulation of antifuse program/read/latch circuit. Therefore the electrical repair circuit behaved safely and the yield of high densitymemory will be increased by using the circuit.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.300-300
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• 2010

후면 패시베이션, back contact의 가변, 후면 접촉면적의 가변 등으로 Laser Fired Contact 태양전지의 효율을 증가 시킬 수 있다. 이 중 spacing의 가변으로 후면 접촉 면적을 가변 할 수 있으며, 이로 인하여 LFC 태양 전지의 효율을 높일 수 있을 것으로 전망된다. 본 연구에서는 후면 접촉 면적을 가변하였으며 이에 따른 효과를 확인하였다. series resistance가 작고, open circuit voltage 가 높은 최적의 조건을 찾는 것에 그 목적을 두었다. 실험 순서는 texturing 후, 후면에 SiNx를 10nm 증착하였으며, drive-in 방법으로 $POCl_3$을 도핑하였다. ARC후, spacing 조건 가변으로 접촉 면적을 가변시키면서 소자의 특성 변화를 비교하였다. 접촉 면적 및 spacing 조건은 5개의 set에 대하여 reference, 50%의 접촉 면적을 가지는 $150{\mu}m$ line, 10%의 접촉 면적을 가지는 $700{\mu}m$ line, 1%의 접촉 면적을 가지는 $700{\mu}m$ dot, 그리고 0.2%의 접촉 면적을 가지는 $1500{\mu}m$ dot으로 하였다. 각각의 경우에 대한 short circuit current density, fill factor, seris resistance, sheet resistance, open circuit voltage를 측정하였으며, 특히 series resistance는 각각의 경우에 대하여 $6.1m{\Omega}$, $5.1m{\Omega}$, $7.8m{\Omega}$, $10.1m{\Omega}$, 그리고 $15.7m{\Omega}$으로 측정되었다. wafer의 외각 테두리를 접촉 면적이 증가함에 따라서 sheet resistance가 증가하는 것을 확인 할 수 있었다.

• 한국전자파학회논문지
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• 제15권6호
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• pp.590-598
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• 2004

저잡음 특성과 함께 부성 저항과 수동 캐패시턴스의 특성을 보이도록 설계된, 직렬 피드백 회로를 이용한 FET능동 캐패시턴스 회로를 심도 있게 분석하였고, 이를 저잡음 능동 대역통과 여파기에 적용하였다. 부성저항을 이용한 마이크로파 대역 능동 여파기의 설계방식은 비교적 여러 차례 소개되었으나, 원하는 주파수에서 적절한 부성저항 성분을 구현하는 데에는 아직 어려움이 있으며, 이로 인한 능동 회로의 안정성 저하와 대역내 평탄도 증가 등으로 인해 실제 상용화에는 다다르지 못하고 있다. 이들 문제를 해결하고 실제 상용화에 이르기 위해서는 부성저항 회로의 세밀한 분석이 필요하며, 이를 이용한 부성저항 성분의 제어를 가능하도록 해야 한다. 이에 본 논문에서는 능동 캐패시턴스 회로의 부성저항 성분을 분석하였고, 또한 BPF의 통과대역의 평탄도를 개선할 수 있는 방법을 제시하였다. 제작된 4단 대역통과 여파기는 중심주파수 1.99 ㎓에서 60 MHz의 대역폭을 가지며, 0.67 ㏈ 삽입손실, 0.3 ㏈ 이내의 대역내 평탄도와 3.0 ㏈의 잡음 지수 특성을 보였다.

• 한국전기전자재료학회논문지
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• 제23권4호
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• pp.298-302
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• 2010

We investigated the resistance change behavior of SABiT (Samsung Advanced Bump interconnection Technology) technology-applied PCB (Printed Circuit Board) with the various bump sizes and fabrication conditions. Many testing samples with different bump size, prepreg thickness, number of print on the formation of Ag paste bump, were made. The resistance of Ag paste bump itself was calculated from the Ag paste resistivity and bump size, measured by using 4-point probe method and FE-SEM (Field Emission Scanning Electron Microscope), respectively. The contact resistance between Ag paste bump and conducting Cu line were obtained by subtracting the Cu line and bump resistances from the measured total resistance. It was found that the contact resistance drastically changed with the variation of Ag paste bump size and the contact resistance had the largest influence on total resistance. We found that the bump size and contact resistance obeyed the power law relationship. The resistance of a circuit in PCB can be estimated from this kind of relationship as the bump size and fabrication technique vary.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제53권5호
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• pp.295-304
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• 2004

This paper deals with characteristic analysis method using d-q axis equivalent circuit considering iron loss in a single-phase line-start permanent magnet synchronous motor. The iron loss resistance to account for the iron loss is included in the equivalent circuit to improve the modeling accuracy. Furthermore, for the improved calculation of the iron loss, the iron loss is calculated from the magnetic flux density by 2-dimensional finite element method. The result is represented as the iron loss resistance and connected in parallel with the total induced voltage. Therefore, the currents can be expressed as the summation the output current with the current corresponding to the iron loss. Finally, the steady state characteristic analysis results are compared with the experimental results to verify this approach.

• 전력전자학회논문지
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• 제8권1호
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• pp.40-47
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• 2003

A low-cost current-sensing scheme for the motor drives with MOSFET is described. Many motor drives usually employ the common current sensors to measure current for the purpose of control or protection. These current sensors, however, significantly burden the power circuit with the size and cost. The proposed current-sensing scheme utilizes information concerning MOSFET's On-voltage and On-resistance. An analogue circuit detecting On-voltage can overcome the above disadvantages because the circuit is small and is made at a low cost, and the fuzzy inference for On-resistance is also simply designed based on MOSFET's characteristics. The validity of this scheme will be experimentally verified by adopting the current control of a battery car.

• 한국통신학회논문지
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• 제5권1호
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• pp.70-75
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• 1980

本 論文은 2個의 電流미러(Current mirror)로 構成한 電壓制御負抵抗回路를 새롭게 提示하였고, 이 構成된 回路의 動作을 推定하고, 解析하였다. 그리고 回路에서 R과 直列로 Zener Diode를 入하여 Vp를 높이고 外部抵抗을 可變시켜 負抵抗特性을 보았는데 實驗을 通하여, 推定되는 回路動作의 實現과 解析結果에서 얻은 負抵抗測와 實驗値가 大體로 一致함을 確認하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.767-769
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• 1998

Using the R/V converting circuit, hydrogen detecting characteristics of the $WO_3$ films were investigated. The R/V converting circuit is configured with the equivalently constant current driving method connecting an unknown resistor to be measured in the feedback loop of the or-amr rather than using a separated constant current circuit. The response time of the reference voltage for the R/V converting circuit was simulated by the circuit simulator "SABER", and it was found that the response time in the high resistance range become longer and the error amounts to 10%. From the simulation results. replacing the capacitor in the feedback loop of the second stage or-amp with a 0.001uF capacitor, when measuring in the high resistance range, the response characteristics are remarkably improved. The response time was shortened from about 10 seconds to below 1 second. Using this circuit, the effect of $WO_3$ films deposited by sputtering method on hydrogen was measured.

• 대한전기학회논문지:전력기술부문A
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• 제53권4호
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• pp.221-226
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• 2004

Power system has recently used Double-circuit Line and Multi-circuit Line in the industrial development. This has an advantage of system stability and reliability, but the complexity of the system has a disadvantage that makes it difficult to protect the power line. Double-circuit Line has two operation conditions in the Single-circuit operation and Double-circuit operation, so it has mutual impedance. To make it possible for the remaining single-line to operate independently while there is a fault with first line or when maintenance is needed, a trip region for the single-circuit operation should be set in order to set the relay trip region. An optimal trip region for each operation, a different operational conditions for the relay setting should be calculated. In this paper, trip regions of each operation condition have been compared by considering mutual impedance and fault resistance that led to the calculation of fault impedance. Also, as we know that one of the advantages in the distance relay is the back-up protection, we calculated the trip region(Zone-2) in consideration of the mutual impedance.