• 제목/요약/키워드: ChoiIn-gyu

검색결과 3,093건 처리시간 0.041초

Nano-CMOSFET를 위한 플라즈마-질화막의 초기 산화막 성장방법에 따른 소자 특성과 저주파 잡음 특성 분석 (Dependence of Low-frequency Noise and Device Characteristics on Initial Oxidation Method of Plasma-nitride Oxide for Nano-scale CMOSFET)

  • 주한수;한인식;구태규;유옥상;최원호;최명규;이가원;이희덕
    • 한국전기전자재료학회논문지
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    • 제20권1호
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    • pp.1-7
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    • 2007

  • In this paper, two kinds of initial oxidation methods i.e., SLTO(Slow Low Temperature Oxidation: $700^{\circ}C$) and RTO(Rapid Thermal Oxidation: $850^{\circ}C$) are applied prior to the plasma nitridation for ultra thin oxide of RPNO (Remote Plasma Nitrided Oxide). It is observed that SLTO has superior characteristics to RTO such as lower SS(Sub-threshold Slope) and improved Ion-Ioff characteristics. Low frequency noise characteristics of SLTO also showed better than RTO both in linear and saturation regime. It is shown that flicker noise is dominated by carrier number fluctuation in the channel region. Therefore, SLTO is promising for nano-scale CMOS technology with ultra thin gate oxide.

  • https://doi.org/10.4313/JKEM.2007.20.1.001 인용 PDF KSCI