• Proceedings of the Korean Environmental Sciences Society Conference
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• 2005.05a
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• pp.267-271
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• 2005

This experiment was carried out at 450"C, which is relatively lower than the temperature for supercritical water oxidation (600-650$^{\circ}C$). In this experiment, the decomposition rates of various incombustible organic substances were very high. In addition, it was confirmed that hetero atoms existed in organic compounds and chlorine was neutralized by sodium(salt formation).However, to raise the decomposition rate, relatively large amount of sodium nitrate(3-4 times the equivalent weight) was required. When complete oxidation is intended as in the case with PCB, the amount of oxidizer and decomposition cost is important. But when vaporization reduction is required as in the case with nuclear wastes, the amount of radioactive wastes increases instead. But as can be seen in the result of XRD measurement, unreacted sodium nitrate remained unchanged. If oxidation reaction of organic substance simply depends on collision frequency, unreacted sodium nitrate can be recovered and reused, then oxidation equivalent weight would be sufficient. In the gas generated, toxic gas was not found. As the supercritical water medium has high reactivity, it is difficult to generate relatively low energy level SO$_{X}$, and NO$_{X}$.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.819-824
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• 2000

In this research, the etching characteristics of Ta thin film with chlorine plsama have been studied by Electron Cyclotron Resonance (ECR) plasma etching system. The effects of microwave power, RF bias power, working pressure and gas chemistry on the etching profiles have been investigated. The microloading effect, which was observed at fine pattern formation, was effectively suppressed by double step etching, and anisotropic $0.2{\mu\textrm{m}}$ L&S patterns were successfully generated.

• Membrane Journal
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• v.26 no.2
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• pp.152-158
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• 2016

The Chlor-alkali (CA) membrane cell is a major electrolysis system to produce valued chemicals such as chlorine gas and sodium hydroxide. The CA membrane process has been attracted in the industries, since it has relatively low energy consumption when compared with other CA processes. The key component in CA process is perfluorinated sulfonic acid ionomer membranes, which provide ion-selectivity and barrier properties to produced gases. Unfortunately, there is limited information to determine which factors should be satisfied for CA applications. In this study, the influences of PFSA membranes on CA performances are disclosed. They include ion transport behaviors, gas evolution capability, and chemical/electrochemical resistances under CA operation conditions.

• Journal of the Korean Ceramic Society
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• v.46 no.5
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• pp.515-519
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• 2009

Carbon layers were fabricated on silicon carbide by chlorination reaction at temperatures between $1000^{\circ}C$ and $1500^{\circ}C$ with $Cl_2/H_2$ gas mixtures. The effect of reaction temperature on the micro-structures and tribological behavior of SiC derived carbon layer was investigated. Tribological tests were carried out ball-on-disk type wear tester. Carbon layers were characterized by X-ray diffractometer, Raman spectroscopy and surface profilometer. Both friction coefficients and wear rates were maintained low values at reaction temperature up to $1300^{\circ}C$ but increased suddenly above this temperature. Variation of surface roughness as a function of reaction temperature was dominant factor affecting tribological transition behavior of carbon layer derived from silicon carbide at high temperature.

• Journal of the Korean Society of Safety
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• v.8 no.4
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• pp.175-182
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• 1993

Volatilization of toxic heavy metals, especially, metal chlorides at elevated temperatures in oxidation conditions was observed using a thermogravimetric furnace since such metal chlorides used to be a cause for the disease of industrial workers by their toxicity and high volatile extent. Most of tested metal chloride compounds were evaporated or decomposed into gas phase at elevated temperatures ranged from 200~90$0^{\circ}C$, while CrCl$_3$ and NiC1$_2$became stable with converting into oxide forms. A kinetic model for evaporation/condensation could predict maximum evaporation flux and the calculated values were compared with real evaporation flux. The ratio of two fluxes could be explained as the fraction of impinging gas molecules to the condensing surface( $\alpha$ ) and obtained in the range of 10$^{-3}$ ~10$^{-9}$ for the experimented toxic heavy metal chlorides. This ratio might be used to define the volatile extent or toxicity of such toxic metal compounds. The schemes to avoid volatilization of toxic heavy metals Into the atmosphere were suggested as follows ; 1 ) controlling the compositions of metals and Chlorine produced substances( such as PVC ) in the treated materials using a reverse estimation from regulatory limit and characteristics of a processing facility, 2) Installation of wet type devices such as a scrubber for condensing the metal compounds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.213-216
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• 2001

Etching behaviors of ferroelectric YMn $O_3$ thin films were studied by an inductively coupled plasma (ICP). Etch characteristic on ferroelectric YMn $O_3$ thin film have been investigated in terms of etch rate, selectivity and etch profile. The maximum etch rate of YMn $O_3$ thin film is 300 $\AA$/min at Ar/C $l_2$ of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of 3$0^{\circ}C$. Addition of C $F_4$ gas decrease the etch rate of YMn $O_3$ thin film. From the results of XPS analysis, Y $F_{X}$ compunds were found on the surface of YMn $O_3$ thin film which is etched in Ar/C1/C $F_4$ plasma. The etch profile of YMn $O_3$ film is improved by addition of C $F_4$ gas into the Ar/C $l_2$ plasma. These results suggest that fluoride yttrium acts as a sidewall passivants which reduce the sticking coefficient of chlorine on YMn $O_3$.>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.182-185
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• 2003

Etching characteristics of (PB,Sr)$TiO_3$(PST) thin films Were investigated using inductively coupled chlorine based plasma system as functions of gas mixing ratio, RF power and DC bias voltage. It was found that increasing of Ar content in gas mixture' lead to sufficient increasing of etch rate and selectivity of PST to Pt. The maximum etch rate of PST film is 562 ${\AA}$/min and the selectivity of PST film to Pt is 0.8 at $Cl_2/(Cl_2+Ar)$ of 20 %. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• Journal of the Korean Institute of Gas
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• v.21 no.3
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• pp.9-16
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• 2017

Toxic release is one of the most interested area in evaluating consequence to the vicinity of industry facilities handling hazardous materials. Chloric acid production facility is selected and toxic release is evaluated to assess the risk impacted to its off-site. Accident scenarios were listed using process safety information. The scenarios having effect to the off-site were selected and assessed further according to guideline provided by Korea government. Worst case and alternative scenarios including other interested scenarios were evaluated using ALOHA. Each evaluated scenario was assessed further considering countermeasures. The results showed that the facility handling chloric acid is safe enough and needed no further protections at the moment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.314-318
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• 2002

The etching behaviors of the ferroelectric $YMnO_3$ thin films were studied by an inductively coupled plasma (ICP). The maximum etch rate of $YMnO_3$ thin film is 300 ${\AA}/min$ at Ar/$Cl_2$of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of $30^{\circ}C$. Addition of $CF_4$ gas decrease the etch rate of $YMnO_3$ thin film. From the results of XPS analysis, nonvolatile $YF_x$ compounds were found on the surface of $YMnO_3$ thin film which is etched in Ar/$Cl_2$/CF$_4$plasma. The etch profile of YMnO$_3$film is improved by addition of $CF_4$ gas into the Ar/$Cl_2$ plasma. These results suggest that YF$_{x}$ compound acts as a sidewall passivants which reduce the sticking coefficient of chlorine on $YMnO_3$.

• Journal of Food Hygiene and Safety
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• v.34 no.2
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• pp.170-177
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• 2019

The aim of this study was to investigate the effect of different concentrations of chlorine dioxide ($ClO_2$) on sterilization and deodorization of food-holding cabinets under different exposure times. For the measuring sterilization and deodorization, a 6.5 L chamber and a 625 L cabinet with circulation systems were used. Two bacteria (Staphylococcus aureus KCTC1916 and Escherichia coli KCTC 1682) that were artificially inoculated in the plate respectively were put into the 6.5 L chamber and the 625 L cabinet. The $ClO_2$ gas was produced by ampules. In the 6.5 L chamber, neither of the two bacteria was detected after 24 hours treatment by $ClO_2$ gas. Moreover, the deodorization rate against ammonia and phenol was 94% and 70%, respectively, but deodorization against formaldehyde was not effective. When the concentration reached maximum (6 ampule, 4.6 ppm) levels in the cabinet, it lasted for approximately 2 h and then decreased slowly. When a circulator was used, the gas concentration was very low (6 ampule, 0.8 ppm) and the antibacterial activity against S. aureus and E. coli was low. The level of reduction against S. aureus and E. coli was 2.98 log CFU/plate and 6.06 log CFU/plate, respectively, in the cabinet after 24 h without a circulator. The reduction against S. aureus KCTC1916 and E. coli KCTC1682 was 2.69 log CFU/plate and 4.41 log CFU/plate for 24 h, respectively.