• Title/Summary/Keyword: Chirped 양자점

Search Result 2, Processing Time 0.021 seconds

Optical and Electrical Characteristics of Chirped Quantum Dot Structures for the Superluminescent Diodes with Wide Spectrum Bandwidth (파장대역폭이 넓은 고휘도 발광소자를 위한 Chirped 양자점 구조의 광/전기 특성 분석)

  • Han, Il-Ki
    • Journal of the Korean Vacuum Society
    • /
    • v.18 no.5
    • /
    • pp.365-371
    • /
    • 2009
  • We analyzed photoluminescence (PL) and electroluminescence characteristics of various chirped quantum dot structures. Peaks in EL curves were contributed by excited states of quantum dots (QD), while those in PL curves by grounded states. Based on these characteristics, we suggested that superluminescent diodes with wide spectral bandwidth may be developed if chirped QD structures are designed to make a contribution by ground states to EL characteristics.

Superluminescent diodes using chirped InAs QD (Chirped InAS 양자점을 사용한 고휘도 발광소자)

  • Yoo, Y.C.;Han, I.K.;Lee, J.I.;Kim, K.H.;Ahn, J.S.;Park, H.
    • Proceedings of the Optical Society of Korea Conference
    • /
    • 2005.07a
    • /
    • pp.56-57
    • /
    • 2005
  • We have studied on the SLDs utilizing InAs chirped QD structure. The output power and spectral bandwidth are obtained as CW 40 mW at RT and about 100 nm, respectively. More high performance of SLD can be possible with optimized design for the chirped QD structures.

  • PDF