Proceedings of the Optical Society of Korea Conference (한국광학회:학술대회논문집)

Optical Society of Korea (한국광학회)
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Superluminescent diodes using chirped InAs QD

Chirped InAS 양자점을 사용한 고휘도 발광소자

  • Yoo, Y.C. (Nano Device Research Center. KIST) ;
  • Han, I.K. (Nano Device Research Center. KIST) ;
  • Lee, J.I. (Nano Device Research Center. KIST) ;
  • Kim, K.H. (Imformation and Communication engineering, SKKU) ;
  • Ahn, J.S. (Imformation and Communication engineering, SKKU) ;
  • Park, H. (Imformation and Communication engineering, SKKU)
  • Published : 2005.07.14
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Abstract

We have studied on the SLDs utilizing InAs chirped QD structure. The output power and spectral bandwidth are obtained as CW 40 mW at RT and about 100 nm, respectively. More high performance of SLD can be possible with optimized design for the chirped QD structures.

Keywords