• Korean Journal of Materials Research
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• v.32 no.6
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• pp.293-300
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• 2022

This study investigated a graded-refractive-index (GRIN) coating pattern capable of improving the light extraction efficiency of GaN light-emitting diodes (LEDs). The planar LEDs had total internal reflection thanks to the large difference in refractive index between the LED semiconductor and the surrounding medium (air). The main goal of this paper was to reduce the trapped light inside the LED by controlling the refractive index using various compositions of (TiO₂)_x(SiO₂)_1-x in GRIN LEDs consisting of five dielectric layers. Several types of multilayer LEDs were simulated and it was determined the transmittance value of the LEDs with many layers was greater than the LEDs with less layers. Then, the specific ranges of incident angles of the individual layers which depend on the refractive index were evaluated. According to theoretical calculations, the light extraction efficiency (LEE) of the five-layer GRIN is 25.29 %, 28.54 % and 30.22 %, respectively. Consequently, the five-layer GRIN LEDs patterned enhancement outcome LEE over the reference planar LEDs. The results suggest the increased light extraction efficiency is related to the loss of Fresnel transmission and the release of the light mode trapped inside the LED chip by the graded-refractive-index.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.758-765
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• 1986

The design, fabrication and performance of vertical double diffused power MOSFET (VDMOS) were described. On the antimony (Sb) doped (~7x10**17 cm**-3) silicon substrate (N+), epitaxial layer(N-) was grown. The thickness and the resistivity of this layer were 32\ulcorner and about 12\ulcorner-cm, respectively. The P- channel length which was controlled by sequential P-/N+ double diffuison method was about 1~2 \ulcorner, and was processed with the self alignment of 21 \ulcorner width poly silicon. To improve the breakdown voltage with constant on-resistance (Ron) about 1\ulcorner, three P+ guard rings were laid out around main pattern. With chip size of 4800\ulcorner x4840 \ulcorner, the VDMOS has shown breakdown voltage of 410~440V, on-resistance within 1.0~1.2\ulcornerand the current capablity of more than 5A.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.11
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• pp.2594-2603
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• 1997

A novel method of adaptive beam forming is presented in this paper. The proposed technique provides for a suboptimal beam pattern that increases the Signal to Noise/Interference Ratio (SNR/SIR), thus, eventually increases the capacity of the communication channel, under an assumption that the desired signal is dominant compared to each component of interferences at the receiver, which is precoditionally achieved in Code Division Multiple Access (CDMA) mobile communications by the chip correlator. The main advantages of the new technique are:(1)The procedure requires neither reference signals nor training period, (2)The signal interchoerency does not affect the performance or complexity of the entire procedure, (3)The number of antennas does not have to be greater than that of the signals of distinct arrival angles, (4)The entire procedure is iterative such that a new suboptimal beam pattern be generated upon the arrival of each new data of which the arrival angle keeps changing due tot he mobility of the signal source, (5)The total amount of computation is tremendously reduced compared to that of most conventional beam forming techniques such that the suboptimal beam pattern be produced at vevery snapshot on a real-time basis. The total computational load for generating a new set of weitht including the update of an N-by-N(N is the number of antenna elements) autocovariance matrix is $0(3N^2 + 12N)$. It can further be reduced down to O(11N) by approximating the matrix with the instantaneous signal vector.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.42 no.4
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• pp.716-722
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• 2017

In this paper, a fully printed NFC tag operating at 13.56 MHz was designed and fabricated using silver nano-paste and carbon ink. The proposed NFC tag has a printed coil with an inductance of $2.74{\mu}H$ on a PI film for application to an NFC tag IC with an internal capacitance of 50 pF. Screen printing technology used in this paper has advantages such as large area printing for mass production, low cost and eco-friendly process compared to conventional PCB manufacturing process. The proposed structure consists of a circular coil implemented as a single layer using silver nano-paste and carbon ink, a jumper pattern for chip mounting between the outer edge and the center of the coil, and an insulation pattern between the coil and the jumper pattern. In order to verify the performance of the proposed NFC tag, we performed the measurements of the printing line width, thickness, line resistance, adhesion and environmental reliability, and confirmed the suitability of the NFC tag based on the full-printed manufacturing method.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.6
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• pp.37-43
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• 2017

This review investigates the basic principle of physical interactions and failure mechanisms introduced in the materials and inner parts of semiconducting components under electromagnetic pulses (EMPs). The transfer process of EMPs at the semiconducting component level can be explained based on three layer structures (air, dielectric, and conductor layers). The theoretically absorbed energy can be predicted by the complex reflection coefficient. The main failure mechanisms of semiconductor components are also described based on the Joule heating energy generated by the coupling between materials and the applied EMPs. Breakdown of the P-N junction, burnout of the circuit pattern in the semiconductor chip, and damage to connecting wires between the lead frame and semiconducting chips can result from dielectric heating and eddy current loss due to electric and magnetic fields. To summarize, the EMPs transferred to the semiconductor components interact with the chip material in a semiconductor, and dipolar polarization and ionic conduction happen at the same time. Destruction of the P-N junction can result from excessive reverse voltage. Further EMP research at the semiconducting component level is needed to improve the reliability and susceptibility of electric and electronic systems.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.6
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• pp.535-543
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• 2009

This paper describes a design for RFID(Radio Frequency Identification) tag antenna using license plate attached the vehicle bumper in 900 MHz band. The proposed tag antenna size which is located on upper center position of a vehicle license plate is 162.5${\times}$40${\times}$1 mm$^3$. A resonant frequency of design antenna and the bandwidth which has return loss of -10 dB below are 900 MHz and about 720 MHz(640${\sim}$1,360 MHz), respectively. The commercial chip impedance considered on design was 16- j131 ${\Omega}$ and the complex conjugate impedance of chip was used as input impedance of tag antenna. The measured return loss and radiation pattern were agreed well with the calculated results. The measured readable range of the proposed tag antenna designed on only the vehicle license plate was 11.5 m. Moreover, its range of the fabricated tag antenna that the license plate and the vehicle bumper were fixed by volt and nut was observed 10.4 m. These measured readable range showed about 5 m above far distance more than the average readable range of commercial tag antenna.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.5
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• pp.523-532
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• 2008

In this paper, we proposed a U-shaped RFID tag antenna with isotropic radiation characteristic for the stable operation of RFID system. The proposed antenna is composed of a U-shaped half wavelength dipole and a rectangular-shaped feed. In order to have good impedance matching with a tag chip, the commercial tag chip is attached to the lower center of the feed. A gain deviation characteristic of the U-shaped tag antenna can be further improved by inserting a rectangular slit in the lower center of the U-shaped antenna body. On the condition of VSWR<2, the tag antennas of two structures satisfy the Korea UHF RFID bandwidth and showed the gain deviation of less than 1.63 dB and 0.74 dB for without slit and with slit, respectively. On the condition of VSWR<5.8, the U-shaped tag antenna showed the gain deviation of less than 3.8 dB and 1.2 dB for without slit and with slit, respectively.

• Asian-Australasian Journal of Animal Sciences
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• v.26 no.6
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• pp.772-779
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• 2013

Linkage disequilibrium (LD) plays an important role in genomic selection and mapping quantitative trait loci (QTL). In this study, the pattern of LD and effective population size ($N_e$) were investigated in Chinese beef Simmental cattle. A total of 640 bulls were genotyped with IlluminaBovinSNP50BeadChip and IlluminaBovinHDBeadChip. We estimated LD for each autosomal chromosome at the distance between two random SNPs of <0 to 25 kb, 25 to 50 kb, 50 to 100 kb, 100 to 500 kb, 0.5 to 1 Mb, 1 to 5 Mb and 5 to 10 Mb. The mean values of $r^2$ were 0.30, 0.16 and 0.08, when the separation between SNPs ranged from 0 to 25 kb to 50 to 100 kb and then to 0.5 to 1 Mb, respectively. The LD estimates decreased as the distance increased in SNP pairs, and increased with the increase of minor allelic frequency (MAF) and with the decrease of sample sizes. Estimates of effective population size for Chinese beef Simmental cattle decreased in the past generations and $N_e$ was 73 at five generations ago.

• Journal of Physiology & Pathology in Korean Medicine
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• v.23 no.3
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• pp.645-661
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• 2009

The water extract of Dohongsamul-Tang(DHSMT) has been traditionally used to stroke and brain injuries in Oriental Medicine. The present study was designed to investigate the effects of DHSMT on the gene expression profile of cerebral infarction by cDNA microarray in photothrombotic ischemia mouse model. Photothrombotic ischemia was induced in stereotactically held male BALB/c mice using rose bengal and cold light. MRI was performed 24 hours after inducing photothrombosis using 1.5 T MRI and 47 mm surface coil to obtain T2-weighted, and contrast-enhanced images. After MRI test, animal was sacrificed and the brain sections were stained for hematoxylin and eosin and immunohistochemistry. MRI and histological analysis revealed that lesion of thrombotic ischemia was well induced in the cortex with the evidence of biological courses of infarction. The target area of thrombotic infarction was 1 mm anterior to bregma and 3 mm lateral to midline with 2 mm in diameter, which were decreased by administration of DHSMT. To assess gene expression pattern of cerebral infarction, mRNA was isolated and reacted with microarray chip(Agilant's DNA Microarray 44K). Scatter and MA plot analysis were performed to clustering of each functional genes. M value [M=log2(R/G), A={log2(R ${\times}$ G)}/2] was between -0.5 and +0.5 with 40% difference. After pretreatment with DHSMT, the expression levels of mRNA of many genes involved in various signaling pathway such as apoptosis, cell cycle, cell proliferation, response to oxidative stress, immune response, angiogenesis, and inflammatory cytokine were markedly inhibited in photothrombotic ischemia lesion compared to the control group. These results suggest that DHSMT prevent ischemic death of brain on photothrombotic ischemia model of mice through modulation of gene expression at the transcriptional level.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.2
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• pp.154-161
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• 2011

This paper presents a compact integrated transceiver module for 2.4 GHz band applications using Low Temperature Co-fired Ceramic(LTCC) technology. The implemented transceiver module is divided into an RF Front-End Module (FEM) part and a transceiver IC chip part. The RF FEM part except an SPDT switch and DC block capacitors is fully embedded in the LTCC substrate. The fabricated RF FEM has 8 pattern layers and it occupies less than $3.3\;mm{\times}5.2\;mm{\times}0.4\;mm$. The measured results of the implemented RF FEM are in good agreement with the simulated results. The transceiver IC chip part consists of signal line, power line and transceiver IC for 2.4 GHz band communication system. The fabricated transceiver module has 9 layers including three inner grounds and it occupies less than $12\;mm{\times}8.0\;mm{\times}1.1\;mm$. The implemented transceiver module provides an output power of 18.1 dBm and a sensitivity of -85 dBm.