• 제목/요약/키워드: Cheongju-si

검색결과 201건 처리시간 0.029초

WBG 소자를 적용한 위성 전력 시스템용 LCL 회로에 관한 연구 (A Study on LCL Circuit for Satellite Power System Applying WBG Device)

  • 유정상;안태영;길용만;김현배;박성우;김규동
    • 반도체디스플레이기술학회지
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    • 제21권2호
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    • pp.101-106
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    • 2022
  • In this paper, WBG semiconductor such as SiC and GaN were applied as power switches for LCL circuit that can be applied to satellite power systems and the test results of the LCL circuit are reported. P-channel MOSFET and N-channel MOSFET, which were generally used in the conventional LCL circuit, were applied together to expand the utility of the test results. The design and stability evaluation were performed using a Micro Cap circuit simulation program. For the test circuit, a module using each switch was manufactured, and a total of 5 modules were manufactured and the steady state and transient state characteristics were compared. From the experimental results, the LCL circuit for power supply of the satellite power system constructed in this paper satisfied the constant current and constant voltage conditions under various operating conditions. The P-channel MOSFET showed the lowest efficiency characteristics, and the three N-channel switches of Si, SiC and GaN showed relatively high efficiency characteristics of up to 99.05% or more. In conclusion, it was verified that the on-resistor of the switch had a direct effect on the efficiency and loss characteristics.

측면입사광에 대한 SiOx 무반사 회절격자 결합 c-Si PV 서브-모듈의 광전변환효율 향상 (Improvement of Solar Conversion Efficiency in a c-Si PV Sub-Module Integrated with SiOx Anti-Reflection Grating for Oblique Optical Irradiation)

  • 심지현;김제하
    • 한국전기전자재료학회논문지
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    • 제30권5호
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    • pp.325-330
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    • 2017
  • We fabricated 1-D and 2-D diffraction gratings of SiOx anti-reflection (AR) film grown on a quartz substrate and integrated them into a c-Si photovoltaic (PV) submodule. The light-trapping effect of the resulting submodules was studied in terms of the oblique optical incident angle, ${\theta}_i$. As the ${\theta}_i$ increased, solar conversion efficiency, ${\eta}$, was improved as expected by the increased optical transmission caused by the grating. For ${\theta}_i{\leq}30^{\circ}$, the relative solar conversion efficiency, ${\Delta}{\eta}$, of a 1-D SiOx (t=300 nm) grating, compared to that of a flat SiOx AR-coated integrated PV submodule, was improved very little, with a small variation of within 2%, but increased markedly for ${\theta}_i{\geq}40^{\circ}$. We observed a change of ${\Delta}{\eta}$ as large as 10.7% and 9.5% for the SiOx grating of period t=800 nm and 1200 nm, respectively. For a 2-D SiOx (t=300 nm) grating integrated PV submodule, however, the optical trapping behavior was similar in terms of ${\theta}_i$ but its variation was small, within ${\pm}1.0%$.

GaN FET를 적용한 CRM PFC의 효율특성에 관한 연구 (A study on the Efficiency characteristics of the CRM PFC using GaN FET)

  • 길용만;최현수;진기석;안태영;장진행
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2014년도 전력전자학술대회 논문집
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    • pp.89-90
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    • 2014
  • Recently, one of the switching rectifiers, Power Factor Correction Circuit is often applied in rectification stage to get high efficient conversion of AC-DC SMPS However, it becomes important to select optimal semiconductor switch as well as to design optimal rectifier for achieving higher power conversion. We performed experiments with MOSFET, SiC and GaN FET that are widely used in 600 W Interleaved CRM PFC and include the data in this report. The results are presented for discrete semiconductor and integrated implementations of interleaved CRM PFC.

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2-Terminal Perovskite/SHJ 탠덤 태양전지 기술 검토 (Review of 2-terminal Perovskite/SHJ Tandem Junction Solar Cell Technology)

  • 장민규;전영우;김민제;이준신;박진주
    • Current Photovoltaic Research
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    • 제10권3호
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    • pp.84-89
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    • 2022
  • c-Si solar cells currently account for more than 90% of the solar energy market. Research on tandem junction solar cells to overcome efficiency limitations is drawing attention at a time when new technologies are being developed to secure the price competitiveness of silicon solar cells. Among several candidate materials for silicon-based tandem solar cells, perovskite has recently been studied as it is suitable for the ease of process as well as for its properties as a tandem solar cell material. In this study, we want to review the research trends and technology limitations of 2-T Perovskite/SHJ tandem junction solar cells.

XRD 분석과 FTIR 분석에 의한 비정질 박막의 특성 연구 (Characteristic Properties of Organic Thin Film Surface on Si Semiconductor)

  • 오데레사
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.112-113
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    • 2007
  • $SiO_2$ 절연 박막위에 희석된 PMMA 유기물을 처리하였다. 유기물 처리량에 따른 $SiO_2$ 박막의 $620{\sim}1100\;cm^{-1}$ 영역의 FTIR 스펙트라를 분석한 결과 0.3~0.7%로 PMMA 처리된 박막에서 친핵성 반응이 밀어나는 것을 확인하였으며, 친핵성 반응이 일어나는 박막들에서 누설전류가 적었으며, 절연특성이 우수한 것을 확인하였다.

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PMMA 기판에 CeO2와 SiO2를 코팅하여 제작한 적외선 차단필터 (IR Cut-off Filter Made of CeO2 and SiO2 Thin Films Coated on PMMA Substrate)

  • 유연석;최상석
    • 한국광학회지
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    • 제17권5호
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    • pp.480-486
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    • 2006
  • 일반적으로 모바일 폰용 적외선 차단 필터는 유리기판위에 $300^{\circ}C$ 이상의 고온에서 코팅된다. 본 연구에서는 PMMA(Poly methyl methacrylate)기판에 저온에서 $CeO_2$$SiO_2$를 사용하여 적외선 차단 필터를 코팅하였다. 저온 코팅된 필터의 접촉각을 측정하여 박막의 부착상태를 시험하였고, 적외선 차단 필터에 대한 시험 및 설계 결과를 모바일 폰용 광학계 개선에 적용하여 보았다.

기공형성에 의한 SiOCH 박막의 유전 특성 (Dielectric Characteristics due to the nano-pores of SiOCH Thin Flm)

  • 김종욱;박인철;김홍배
    • 반도체디스플레이기술학회지
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    • 제8권3호
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    • pp.19-23
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    • 2009
  • We have studied dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was introduced with the flow rates from 24 sccm to 32 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. Then, SiOCH thin film deposited at room temperature was annealed at temperature of $400^{\circ}C$ and $500^{\circ}C$ for 30 minutes in vacuum. The vibrational groups of SiOCH thin films were analyzed by FT/IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. With the result that FTIR analysis, as BTMSM flow rate increase, relative carbon content of SiOCH thin film increased from 29.5% to 32.2%, and increased by 32.8% in 26 sccm specimen after $500^{\circ}C$ annealing. Dielectric constant was lowest by 2.32 in 26 sccm specimen, and decreased more by 2.05 after $500^{\circ}C$ annealing. Also, leakage current is lowest by $8.7{\times}10^{-9}A/cm^2$ in this specimen. In the result, shift phenomenon of chemical bond appeared in SiOCH thin film that BTMSM flow rate is deposited by 26 sccms, and relative carbon content was highest in this specimen and dielectric constant also was lowest value

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$Al_2O_3$ 박막을 이용한 MIS Inversion Layer Solar Cell의 제작 및 특성평가 (Fabrication and Properties of MIS Inversion Layer Solar Cell using $Al_2O_3$ Thin Film)

  • 김현준;변정현;김지훈;정상현;김광호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.242-242
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    • 2010
  • 산화 알루미늄($Al_2O_3$) 박막을 p-type Czochralski(CZ) Si 위에 Remote Plasma Atomic Layer Deposition(RPALD)을 이용하여 저온 공정으로 증착하였다. Photolithography 공정으로 grid 패턴을 형성한 후 열 증착기로 알루미늄을 증착하여 MIS-IL (Metal-Insulator-Semiconductor Inversion Layer) solar cell을 제작하였다. 반응소스로는 Trimethylaluminum (TMA)과 $O_2$를 이용하였다. $Al_2O_3$ 박막의 전기적 특성 평가를 위해 MIS capacitor를 제작하여 Capacitance-voltage (C-V), Current-voltage (I-V), Interface state density ($D_{it}$)를 평가하였으며 Solar simulator를 이용하여 MIS-IL Solar cell의 Efficiency을 측정하였다.

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Influence of Wet Annealing on the Performance of SiZnSnO Thin Film Transistors

  • Han, Sangmin;Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • 제16권1호
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    • pp.34-36
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    • 2015
  • Amorphous SiZnSnO(SZTO) thin film transistors(TFTs) have been fabricated by RF magnetron sputtering process, and they were annealed in air and in wet ambient. The electrical performance and the structure were analyzed by I-V measurement, XPS, AFM, and XRD. The results showed improvement in device performance by wet annealing process compared to air annealing treatment, because free electron was shown to be increased due to reaction of oxygen and hydrogen generating oxygen vacancy. This is understood by the generation of free electrons. We expect the wet annealing process to be a promising candidate to contributing to high electrical performance of oxide thin film transistors for backplane device applications.

Influence of Channel Thickness Variation on Temperature and Bias Induced Stress Instability of Amorphous SiInZnO Thin Film Transistors

  • Lee, Byeong Hyeon;Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • 제18권1호
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    • pp.51-54
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    • 2017
  • TFTs (thin film transistors) were fabricated using a-SIZO (amorphous silicon-indium-zinc-oxide) channel by RF (radio frequency) magnetron sputtering at room temperature. We report the influence of various channel thickness on the electrical performances of a-SIZO TFTs and their stability, using TS (temperature stress) and NBTS (negative bias temperature stress). Channel thickness was controlled by changing the deposition time. As the channel thickness increased, the threshold voltage ($V_{TH}$) of a-SIZO changed to the negative direction, from 1.3 to -2.4 V. This is mainly due to the increase of carrier concentration. During TS and NBTS, the threshold voltage shift (${\Delta}V_{TH}$) increased steadily, with increasing channel thickness. These results can be explained by the total trap density ($N_T$) increase due to the increase of bulk trap density ($N_{Bulk}$) in a-SIZO channel layer.