• Korean Chemical Engineering Research
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• v.45 no.5
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• pp.506-514
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• 2007

To select the best oxygen carrier particle for syngas fueled chemical-looping combustor, the reduction reactivity and carbon deposition characteristics were determined in a thermogravimetric analyzer. Four kinds of oxygen carrier particles (NiO/bentonite, $NiO/LaAl_{11}O_{18}$, $Co_xO_y/CoAl_2O_4$, $NiO/NiAl_2O_4$) were tested with the simulated syngas (30% $H_2$, 10% $CO_2$, 60% CO) as a reduction gas. With each of these particles, the maximum conversion and oxygen transfer capacity increase with increasing the reduction temperature At the given experimental range, the optimum operating temperature to maximize oxygen transfer rate is found to be $900^{\circ}C$ and carbon deposition on the particles could avoid at the temperature above $800^{\circ}C$. Among four kinds of oxygen carrier particles, the NiO-based particles exhibits better reactivity than the CoO-based particle. Moreover, the NiO/bentonite particle produces the best reactivity based on the oxygen transfer rate and the degree of carbon deposition. The measured oxygen transfer rate increases as the metal oxide content in NiO/bentonite particle is increased thereby higher metal oxide contents could provide stable operation of chemical-looping combustor.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.79-85
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• 1997

Fe$_2$O$_3$ thin films were prepared on $Al_2$O$_3$ substrate by PECVD(Plasma-Enhanced Chemical Vapor Deposition) process. The phase transformation of iron oxide film was determined as the substrate temperature and reduction-oxidation process. $\alpha$-Fe$_2$O$_3$ was stable in deposition temperature ranges of 80~15$0^{\circ}C$. Fe$_3$O$_4$ phase was obtained by the reduction process of $\alpha$-Fe$_2$O$_3$ phase in H$_2$ ambient. Fe$_3$O$_4$ phase was transformed into a ${\gamma}$-Fe$_2$O$_3$ thin film under controlled oxidation conditions at 280~30$0^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• v.29 no.10
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• pp.1983-1987
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• 2008

This study demonstrates the electrochemical conversion of the synthetic procedure of monolayer-protected clusters using a thin toluene layer over an edge plane pyrolytic graphite electrode. A thin toluene layer with a thickness of 0.31 mm was coated over the electrode and an immiscible liquid/liquid water/toluene interface was introduced. The transfer of the tetrachloroaurate ($AuCl_4^-$) ions into the toluene layer interposed between the aqueous solution and the electrode surface was electrochemically monitored. The $AuCl_4^-$ ions initially could not move through into the toluene layer, showing no reduction wave, but, in the presence of the phase transfer reagent, tetraoctylammonium bromide (TOABr), a cathodic wave at 0.23 V vs. Ag/AgCl was observed, indicating the reduction of the transferred $AuCl_4^-$ ions in the toluene layer. In the presence of dodecanethiol together with TOABr, a self-assembled monolayer was formed over the electro-deposited metallic gold surface. The E-SEM image of the surface indicates the formation of a highly porous metallic gold surface, rather than individual nanoparticles, over the EPG electrode.

• Journal of the Korean institute of surface engineering
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• v.47 no.6
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• pp.347-353
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• 2014

We present a synthesis of single-walled carbon nanotubes(SWNTs) for enhancement of parallel-alignment and density using chemical vapor deposition with methane feed gas. As-purchased ST-cut quartz substrates were heat-treated and line-patterned by electron-beam lithography in order to grow SWNTs with parallel alignment. We investigated the effects of various synthesis parameters such as catalyst oxidation, reduction, and synthesis conditions in order to enhance both tube density and degree of parallel alignment. The condition of $1{\AA}$ of Fe catalyst film, atmospheric oxidation at $750^{\circ}C$ for 10 min, reduction under 400 Torr for 5 min, and growth at $865^{\circ}C$ under 300 Torr yields $33tubes/10{\mu}m$, which is the highest tube density with parallel alignment. Based on the results of atomic force microscope and Raman spectroscopy, it was found that SWNTs have diameter range of 0.8-2.0 nm. We believe that the present work would contribute to the development of SWNTs-based flexible functional devices.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.2
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• pp.312-317
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• 1994

We studied the fabrication and electrical characteristics of high voltage hydrogenerated amorphous silicon thin film transistor using plasma enchanced chemical vapor deposition(PECVD). The device shows 2500${\AA}$ SiOS12T, 400-1500${\AA}$ a-Si tickness, 350V output voltage and 9.55${\times}$10S04T average on/off current ratio. We found that the leakage current of high voltage TFT occurred 0-70V drain voltage. As the leakage current depend on the a-Si thickness, the leakage current of high voltage TFT decreased by reduction of the a-Si thickness.

• Journal of the Korean institute of surface engineering
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• v.26 no.1
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• pp.3-9
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• 1993

Chemical vapor deposited tungsten films were formed in a cold wall reactor at pressures higher (10~120torr) than those conventionally employed (<1torr). SiH4, in addition to H2, was used as the reduction gas. The effects of pressure and reaction temperature on the deposition rate and morphology of the films were ex-amined under the above conditions. No encroachment or silicon consumption was observed in the tungsten de-posited specimens. A high deposition rate of tungsten and a good step coverage of the deposited films were ob-tained at 40~80 torr and at a temperature range of $360~380^{\circ}C$. The surface roughness and the resistivity of the deposited film increased with pressure. The deposition rate of tungsten increased with the total pressure in the reaction chamber when the pressure was below 40 torr, whereas it decreased when the total pressure ex-ceedeed 40 torr. The deposition rate also showed a maximum value at $360^{\circ}C$ regardless of the gas pressure in the chamber. The results suggest that the deposition mechanism varies with pressure and temperature, the surface reac-tion determines the overall reaction rate and (2) at higher pressures(>40 torr) or temperatures(>36$0^{\circ}C$), the rate is controlled by the dtransportation rate of reactive gas molecules. It was shown from XRD analysis that WSi2 and metastable $\beta$-W were also formed in addition to W by reactions between WF6 and SiH4.

• Korean Journal of Materials Research
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• v.22 no.1
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• pp.8-15
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• 2012

Silicon-based thin film was prepared at room temperature by an electrochemical deposition method and a feasibility study was conducted for its use as an anode material in a rechargeable lithium battery. The growth of the electrodeposits was mainly concentrated on the surface defects of the Cu substrate while that growth was trivial on the defect-free surface region. Intentional formation of random defects on the substrate by chemical etching led to uniform formation of deposits throughout the surface. The morphology of the electrodeposits reflected first the roughened surface of the substrate, but it became flattened as the deposition time increased, due primarily to the concentration of reduction current on the convex region of the deposits. The electrodeposits proved to be amorphous and to contain chlorine and carbon, together with silicon, indicating that the electrolyte is captured in the deposits during the fabrication process. The silicon in the deposits readily reacted with lithium, but thick deposits resulted in significant reaction overvoltage. The charge efficiency of oxidation (lithiation) to reduction (delithiation) was higher in the relatively thick deposit. This abnormal behavior needs to clarified in view of the thickness dependence of the internal residual stress and the relaxation tendency of the reaction-induced stress due to the porous structure of the deposits and the deposit components other than silicon.

• Advances in materials Research
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• v.1 no.1
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• pp.1-12
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• 2012

There have been many efforts on the generating metal nanocrystals enclosed by high-index facets for the use as highly active catalysts. This paper describes a facile synthesis of Au trisoctahedra with high-index facets. In brief, the Au trisoctahdra were prepared by reduction of $HAuCl_4$ in N,N-dimethylformamide (DMF) containing poly (vinyl pyrrolidone) (PVP) and trace amount of $AgNO_3$. The Ag ions in the reaction solution played a critical role in controlling the trisoctahedral shape of the final product by underpotential deposition (UPD) on the Au surfaces. The as-prepared Au trisoctahedra were single crystal and enclosed by high-index {441}, {773} and {331} facets.

• Carbon letters
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• v.8 no.1
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• pp.12-16
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• 2007

Molecular sieving carbon (MSC) for separating $O_2-N_2$ and $CO_2-CH_4$ has been prepared through chemical vapor deposition (CVD) of methane and benzene on activated carbon spheres (ACS) derived from polystyrene sulfonate beads. The validity of the material for assessment of molecular sieving behavior for $O_2-N_2$ and $CO_2-CH_4$ pair of gases was assessed by the kinetic adsorption of the corresponding gases at $25^{\circ}C$. It was observed that methane cracking on ACS lead to deposition of carbon mostly in whole length of pores rather than in pore entrance, resulting in a reduction in adsorption capacity. MSC showing good selectivity for $CO_2-CH_4$ and $O_2-N_2$ separation was obtained through benzene cracking on ACS with benzene entrantment of $0.40{\times}10^{-4}\;g/ml$ at cracking temperature of $725^{\circ}C$ for a period of 90 minutes resulting in a selectivity of 3.31:1.00 for $O_2-N_2$ and 8.00:1.00 for $CO_2-CH_4$ pair of gases respectively.

• Bulletin of the Korean Chemical Society
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• v.34 no.4
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• pp.1199-1204
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• 2013

Nanocomposites consisting of Sn nanoparticles and graphene oxide (GO) were electrophoretically deposited onto Cu current collectors that was used for anodes in Li ion batteries (LIBs). In order to optimize the electrochemical performance of nanocomposites as an anode material by controlling the oxygen functionality, the GO was subjected to $O_3$ treatment prior to electrophoretic deposition (EPD). During thermal reduction of the GO in the nanocomposites, the Sn nanoparticles were reduced in size, along with the formation of SnO and/or $SnO_2$ at a small fraction, relying on the oxygen functionalities of the GO. The variation in the duration of time for the $O_3$ irradiation resulted in a small change in total oxygen content, but in a significantly different fraction of each functional group in the GO, which influenced the Sn nanoparticle size and the amount of SnO (and/or $SnO_2$). As a result, the EPD films prepared with the GO that possessed the least amount of carboxylic groups (made by treating GO in an $O_3$ environment for 3 h) showed the best performance, when compared with the nanocomposites composed of untreated GO or GO that was $O_3$-treated for a duration of less than 3 h.