• 한국산학기술학회논문지
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• 제10권12호
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• pp.3748-3754
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• 2009

원자력발전소에서 냉각재상실사고이후 원자로건물집수조 여과기에서 화학적 영향에 의한 수두손실 변화를 관찰하기 위하여 시험장치에서 단기살수조건, 장기살수조건, 및 화학적 영향을 주는 물질이 없는 조건에 대해 30일 동안 종합적인 수두손실 시험을 수행하였다. 시험결과는 수두손실이 살수조건에 따라 노출된 화학적 영향을 주는 물질의 양에 크게 의존함을 보였다. 시험종료후 수거된 침전물의 XRD 분석은 침전물이 주로 인산화합물임을 보였다. 수두손실과 용해된 화학종의 비교결과는 화학적 영향을 주는 물질 중에서 Al과 Zn의 부식이 시험 초기에 높은 수두 손실 증가율의 원인이 됨을 보였다. 금속 시편에 부동피막이 형성된 이후에 수두손실 증가율은 감소하지만 지속적으로 수두손실이 증가하는 현상은 NUKON 및 콘크리트에서 침출반응에 의해 발생하는 Si, Mg, 및 Ca이 침전물을 형성하는 반응에 기인함을 보였다.

• 한국산학기술학회논문지
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• 제10권11호
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• pp.3260-3268
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• 2009

냉각재상실사고이후 원전의 원자로건물집수조 여과기에서 화학적 영향을 고려한 수두손실을 종합적으로 평가하기 위한 시험장치를 개발하였다. 시험장치에서 원자로건물집수조와 시험장치에서 물 부피에 대한 여과기 면적의 비가 일치하도록 시험조건을 설정하고 시험을 수행하였다. TSP pH 조절제 조건에서 칼슘실리케이트는 시험 초기에 수두손실을 급격히 상승시켰기 때문에 원자로건물에서 모든 칼슘실리케이트를 제거하여야 함을 확인하였다. 비상노심냉각계통 살수지속시간의 차이에 따른 시험결과는 장기살수조건이 단기살수조건에 비해 12배 정도 높은 수두손실을 보였다. 살수조건 시험결과를 화학적 영향이 없는 수두손실과 비교하면 단기살수와 장기살수의 각 조건에서 5.6배 및 60.8배 수두손실이 증가하는 결과를 보였다. 화학적 영향은 재순환수에 노출된 물질의 양에 따라 초기의 일정기간 동안 알루미늄 및 아연도금 판의 부식에 의해 급격히 증가하고 이들이 부동피막을 형성한 이후에는 NUKONTM 및 콘크리트 등에서 침출된 화학종의 침전에 기인하여 증가율이 감소하는 경향을 보였다. 실험결과는 TSP에 의한 알루미늄의 부동피막 형성이 살수시간이 길어지고 알루미늄의 양이 많을 경우 효과적이지 않다는 것을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.105-105
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• 2012

We have developed a photoemission-assisted plasma-enhanced chemical vapor deposition (PAPE-CVD) [1,2], in which photoelectrons emitting from the substrate surface irradiated with UV light ($h{\nu}$=7.2 eV) from a Xe excimer lamp are utilized as a trigger for generating DC discharge plasma as depicted in Fig. 1. As a result, photoemission-assisted plasma can appear just above the substrate surface with a limited interval between the substrate and the electrode (~10 mm), enabling us to suppress effectively the unintended deposition of soot on the chamber walls, to increase the deposition rate, and to decrease drastically the electric power consumption. In case of the deposition of DLC gate insulator films for the top-gate graphene channel FET, plasma discharge power is reduced down to as low as 0.01W, giving rise to decrease significantly the plasma-induced damage on the graphene channel [3]. In addition, DLC thickness can be precisely controlled in an atomic scale and dielectric constant is also changed from low ${\kappa}$ for the passivation layer to high ${\kappa}$ for the gate insulator. On the other hand, negative electron affinity (NEA) of a hydrogen-terminated diamond surface is attractive and of practical importance for PAPECVD, because the diamond surface under PAPE-CVD with H2-diluted (about 1%) CH4 gas is exposed to a lot of hydrogen radicals and therefore can perform as a high-efficiency electron emitter due to NEA. In fact, we observed a large change of discharge current between with and without hydrogen termination. It is noted that photoelectrons are emitted from the SiO2 (350 nm)/Si interface with 7.2-eV UV light, making it possible to grow few-layer graphene on the thick SiO2 surface with no transition layer of amorphous carbon by means of PAPE-CVD without any metal catalyst.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권2호
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• pp.179-184
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• 2016

In recent years, the on-resistance, power loss and cell density of Si power devices have not exhibited significant improvements, and performance is approaching the material limits. GaN is considered an attractive material for future high-power applications because of the wide band-gap, large breakdown field, high electron mobility, high switching speed and low on-resistance. Here we report on the Ohmic contact resistance and reverse-bias characteristics of AlGaN/GaN Schottky barrier diodes with and without annealing. Annealing in oxygen at $500^{\circ}C$ resulted in an increase in the breakdown voltage from 641 to 1,172 V for devices with an anode-cathode separation of $20{\mu}m$. However, these annealing conditions also resulted in an increase in the contact resistance of $0.183{\Omega}-mm$, which is attributed to oxidation of the metal contacts. Auger electron spectroscopy revealed diffusion of oxygen and Au into the AlGaN and GaN layers following annealing. The improved reverse-bias characteristics following annealing in oxygen are attributed to passivation of dangling bonds and plasma damage due to interactions between oxygen and GaN/AlGaN. Thermal annealing is therefore useful during the fabrication of high-voltage GaN devices, but the effects on the Ohmic contact resistance should be considered.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.228.2-228.2
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• 2015

We have developed a TOF-MEIS system using 70~100 keV He+. A TOF-MEIS system was designed and constructed to minimize the ion beam damage effect by utilizing a pulsed ion beam with a pulse width < 1 ns and a TOF delay-line-detector with an 120 mm diameter and a time resolution of 180 ps. The TOF-MEIS is an useful tool for interfacial analysis of the composition and structure of nano and bio systems. Our recent applications are reported. We investigated the effect with Polyaspartic Acid (pAsp) and Osteocalcin on the initial bone growth of calcium hydroxyl appatite on a carboxyl terminated surface. When pAsp is not added to the self-assembled monolayers of Ca 2mM with Phosphate 1.2 mM, the growth procedure of calcium hydroxyl appatite cannot be monitored due to its rapid growth. When pAsp is added to the SAMs, the initial grow stage of the Ca-P can be monitored so that the chemical composition and their nucleus size can be analyzed. Firstly discovered the existence of 1-nm-sized abnormal calcium-rich clusters (Ca/P ~ 3) comprised of three calcium ions and one phosphate ion. First-principles studies demonstrated that the clusters can be stabilized through the passivation of the non-collagenous-protein mimicking carboxyl-ligands, and it progressively changes their compositional ratio toward that of a bulk phase (Ca/P~1.67) with a concurrent increase in their size to ~2 nm. Moreover, we found that the stoichiometry of the clusters and their growth behavior can be directed by the surrounding proteins, such as osteocalcin.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.49.1-49.1
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• 2009

산업화 이후, 석탄 석유를 중심으로 한 화석연료가 이산화탄소를대량으로 배출하며 지구 온난화를 야기함에 따라, 석유를 대체할 새로운 에너지원에 대한 관심이 높아지고 있다. 많은 대체에너지 가운데, 청정하고 무한 재생 가능한대체에너지를 이야기할 때, 가장 큰 기대를 받고 있는 것은 태양에너지이며, 이에 보조를 맞춰 태양광 발전에 대한 연구개발이 국내외적으로 활발히 진행되고 있는 실정이다. 태양 전지는 빛 에너지를 직접 전기 에너지로 바꿔주는 소자로, 셀의효율을 높이기 위해서는 최대한 많은 빛을 흡수시킬 수 있는 것이 중요하다. 빛의 반사를 줄이는 방법에는 Texturing 과 Antireflecting coating 이있다. Antireflecting coating은 반도체와 공기의 중간 굴절율을 갖는 박막을 증착하여 측면 반사를 감소시킴으로서 빛의 손실을 감소시키는 역활을 한다. 반사 방지막으로 쓰이는 SiNx는 SiOx의 대체 물질로 굴절률이 약 1.5로서 Si에 쉽게 형성시킬 수 있고, texturing된 Si 표면에 적합하며 반사율을 10 %에서 2 %로 줄일 수 있다. 나아가 고성능의 반사방지막은 박막의 균일도확보 및 passivation 공정이 필수적이라 판단된다. 따라서 본 연구에서는 PECVD 방법으로 SiH4와 NH3 gas 의 비율을 변화시켜 증착한 SiNx 박막의 결정학적 특성을 X-ray Diffraction 분석과 TEM (TransmissionElectron Microsopy) 을 통해 관찰하였으며, XPS (X-rayphotoelectron spectroscopy) 를 통해 화학적결합을 확인하였고, 이를 FT-IR (Fourier Transform-Infrared spectroscopy)를 통해 관찰한 결과와 연관시켜분석하였다. 굴절율의 경우 Ellipsometry를 이용하여측정하였으며 위의 측정을 통하여 SiNx박막의 반사 방지막으로써의 가능성을 확인하였다.

• 대한전자공학회논문지TE
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• 제39권1호
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• pp.22-30
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• 2002

Si, SiO/sup 2/, TiN, W/sup 2/N 기판 위에 (hfac)Cu(VTMS) 유기금속 전구체로 증착된 구리 핵을 조사하였다. 증착온도가 증가함에 따라, 기판 종류에 상관없이 180。C에서 구리 핵이 클러스터링으로 성장하는 메커니즘을 관찰하였다. 또한, HF용액으로 세척한 TiN 과 SiO/sup 2/가 공존하는 기판에서 구리 핵의 선택성이 향상됨을 관찰하였다. TiN을 H/sup 2/O/sup 2/로 세척한 후 Dimethyldichlorosilane 처리했을 때 표면이 passivation됨을 확인하였다.

• Journal of Advanced Marine Engineering and Technology
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• 제21권5호
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• pp.535-541
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• 1997

The effect of concentration of each solution( HCI, $H_2SO_4$ and $HNO_3$), scan rate and polished surface condition on the corrosion of AISI 304 Stainless Steel were investigated, utilizing the Method ASTM G5 - 87. It can be concluded that: 1) For the same concentration(i.e. 1N) of each solution the corrosion rate is the highest in HCI and lowest in $HNO_3$. Also, the difference of values of $i_{cirt}$ generated for each solution is significant. 2) As the concentration of the solution $H_2SO_4$ is increased (O.5N, 1N, 2N) the values of $E_{cor}$ $i_{crit}$ and $i_{p}$ are increased. 3) In case of existence of SCN ion of O.OlN, the values of iCTIt and ip generated are approximately 100 times and 1.4 times higher respectively, than in the case of non - existence of $SCN^{-}$. However the existence of $SCN^{-}$ doesn't affect the value of $E_{cor}$ and $E_{p}$. 4) The values of $i_{crit}$ and $i_{p}$ are increased due to the increase of scan rate. But the values of $E_{cor}$ and $E_{p}$ do not depend on the scan rate. 5) The $i_{p}$ value depends greatly on oxygen in the solution, but the changes in values of $E_{cor}$ $i_{crit}$ and $E_{b}$ due to the oxygen are insignificant. 6) If a component is polished using #400, #600 and #800 wet polish paper, the effect of surface condition on variations of values of $i_{crit}$ and $i_{p}$ is slightly significant.

• E2M - 전기 전자와 첨단 소재
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• 제9권5호
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• pp.463-469
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• 1996

The double insulating layer consisting of anodic oxide and ZnS was formed for HgCdTe metal insulator semiconductor(MIS) structure. ZnS was evaporated on the anodic oxide grown in H$_{2}$O$_{2}$ electrolyte. Recently, this insulating mechanism for HgCdTe MIS has been deeply studied for improving HgCdTe surface passivation. It was found through TEM observation that an interface layer is formed between ZnS and anodic oxide layers for the first time in the study of this area. EDS analysis of chemical compositions using by electron beam of 20.angs. in diameter and XPS depth composition profile indicated strongly that the new interface is composed of ZnO. Also TEM high resolution image showed that the structure of oxide layer has been changed from the amorphous state to the microsrystalline structure of 100.angs. in diameter after the evaporation of ZnS. The double insulating layer with the resistivity of 10$^{10}$ .ohm.cm was estimated to be proper insulating layer of HgCdTe MIS device. The optical reflectance of about 7% in the region of 5.mu.m showed anti-reflection effect of the insulating layer. The measured C-V curve showed the large shoft of flat band voltage due to the high density of fixed oxide charges about 1.2*10$^{12}$ /cm$^{2}$. The oxygen vacancies and possible cationic state of Zn in the anodic oxide layer are estimated to cause this high density of fixed oxide charges.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.280-284
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• 2004

Multicrystalline silicon wafers were textured in an alkaline bath, basically using sodium hydroxide and in acidic bath, using mainly hydrofluoric acid (HF), nitric acid $(HNO_3)$ and de-ionized water (DIW). Some wafers were also acid polished for the comparative study. Comparison of average reflectance of the samples treated with the new recipe of acidic solution showed average diffuse reflectance less than even 5 percent in the optimized condition. Solar cells were thus fabricated with the samples following the main steps such as phosphorus doping for emitter layer formation, silicon nitride deposition for anti-reflection coating by plasma enhanced chemical vapor deposition (PECVD) and front surface passivation, screen printing metallization, co-firing in rapid thermal processing (RTP) Furnace and laser edge isolation and confirmed >14 % conversion efficiency from the best textured samples. This isotropic texturing approach can be instrumental to achieve high efficiency in mass production using relatively low cost silicon wafers as starting material.