• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.389-392
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and non-uniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between particle size and CMP with particle size analysis of used slurry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.184-187
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) lyaer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2-CMP$ process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis or used slurry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.188-191
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• 2003

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.7
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• pp.22-29
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• 2004

As a result of high integration of semiconductor device, the global planarization of multi-layer structures is necessary. So the chemical mechanical polishing(CMP) is widely applied to manufacturing the dielectric layer and metal line in the semiconductor device. CMP process is under influence of polisher, pad, slurry, and process itself, etc. In comparison with the general CMP which uses the slurry including abrasives, fixed abrasive pad takes advantage of planarity, resulting from decreasing pattern selectivity and defects such as dishing & erosion due to the reduction of abrasive concentration especially. This paper introduces the manufacturing technique of fixed abrasive pad using hydrophilic polymers with swelling characteristic in water and explains the self-conditioning phenomenon. And the tungsten CMP using fixed abrasive pad achieved the good conclusion in terms of the removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary with the pad life-time.

• Journal of the Korean Society for Precision Engineering
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• v.13 no.11
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• pp.46-56
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• 1996

Planarization technique is rapidly recognized as a critical step in chip fabrication due to the increase in wiring density and the trend towards a three dimensional structure. Global planarity requires the preferential removal of the projecting features. Also, the several materials i.e. Si semiconductor, oxide dielectric and sluminum interconnect on the chip, should be removed simultaneously in order to produce a planar surface. This research has investihgated the development of the chemical mechanical polishing(CMP) machine with uniform pressure and velocity mechanism, and the pad insensitive to pattern topography named hard grooved(HG) pad for global planarization. Finally, a successful result of uniformity less than 5% standard deviation in residual oxide film and planarity less than 15nm in residual step height of 4 inch device wafer, is achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.487-487
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• 2009

One of the critical consumables in chemical mechanical polishing (CMP) is a specialized solution or slurry, which typically contains both abrasives and chemicals acting together to planarize films. In single abrasive slurry (SAS), the solid phase consists of only one type of abrasive particle. On the other hand, mixed abrasive slurry (MAS) consists of a mixture of at least two types of abrasive particles. In this paper, we have studied the CMP characteristics of mixed abrasive slurry (MAS) retreated by adding of $CeO_2$ abrasives within 1:10 diluted silica slurry (DSS). The slurry designed for optimal performance should produce reasonable removal rates, acceptable polishing selectivity with respect to the underlying layer, low surface defects after polishing, and good slurry stability. The modified abrasives in MAS are evaluated with respect to their particle size distribution, surface morphology, and CMP performances such as removal rate and non-uniformity. As an experimental result, we obtained the comparable slurry characteristics compared with original silica slurry in the viewpoint of high removal rate and low non-uniformity.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.10a
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• pp.77-77
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• 2003

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.10a
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• pp.79-79
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• 2003

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.10a
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• pp.88-88
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• 2003

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.72.2-72.2
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• 2000