• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

• Applied Chemistry for Engineering
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• 제31권2호
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• pp.220-225
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• 2020

Hair is made of proteins containing various amino acids. Ultraviolet (UV) radiation is believed to be responsible for the most damaging effects of sunlight, and also plays an important role in hair aging. The purpose of this study was to investigate the changes in morphological and chemical structures after ultraviolet B (UVB) irradiation of human hair. The UVB-irradiated hair showed characteristic morphological and structural changes, compared to those of the normal hair. The result from a scanning electron microscope (SEM) equipped with an energy dispersive X-ray diffractometer (EDX) showed that the scale of UV-irradiated hair appeared to be rough and the amount of oxygen element was higher than that of the normal hair. Fluorescence and three dimensional (3D) topographical images were obtained by a confocal laser scanning microscope (CLSM). In 3D images, the green emission intensity of normal hair was much higher than that of fluorescing UVB-irradiated hair. The intensity of green emission reflects the intrinsic fluorescence of hair protein. Also, a fluorescent imaging method using fluorescamine reagent was used to identify the free amino groups resulting from a peptide bond breakage in UVB-irradiated hair. Strong blue fluorescence of UVB-irradiated hair, which indicates a very high level of amino groups, was observed by CLSM. Therefore, the fluorescamine as an extrinsic fluorescence could provide a useful tool to identify the peptide bond breakage in UVB-irradiated hair. Infrared image mapping was also employed to assess the cross-sections of normal and UVB-irradiated specimens to examine the oxidation of disulfide bonds. The degree of peak areas with strong absorbance for the disulfide mono-oxide was spread from the outside to the inside of hair. The spectroscopic techniques used alone, or in combination, launch new possibilities in the field of hair cosmetics.

• Nuclear Engineering and Technology
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• 제52권12호
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• pp.2860-2866
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• 2020

Oxide dispersion-strengthened materials W-1wt%Pr₂O₃ and W-1wt%La₂O₃ were synthesized by wet chemical method and spark plasma sintering. The field emission scanning electron microscopy (FE-SEM) analysis, XRD and Vickers microhardness measurements were conducted to characterize the samples. The irradiations were carried out with a 5 keV helium ion beam to fluences up to 5.0 × 10²¹ ions/m² under 600 ℃ using the low-energy ion irradiation system. Transmission electron microscopy (TEM) study was performed to investigate the microstructural evolution in W-1wt%Pr₂O₃ and W-1wt%La₂O₃. At 1.0 × 10²⁰ He⁺/m², the average loops size of the W-1wt%Pr₂O₃ was 4.3 nm, much lower than W-1wt% La₂O₃ of 8.5 nm. However, helium bubbles were not observed throughout in both doped W materials. The effects of pre-irradiation with 1.0 × 10²¹ He⁺/m² on trapping of injected deuterium in doped W was studied by thermal desorption spectrometry (TDS) technique using quadrupole mass spectrometer. Compared with the samples without He⁺ pre-irradiation, deuterium (D) retention of doped W materials increased after He⁺ irradiation, whose retention was unsaturated at the damage level of 1.0 × 10²²D₂⁺/m². The present results implied that irradiation effect of He⁺ ions must be taken into account to evaluate the deuterium retention in fusion material applications.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• 제16권4호
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• pp.397-410
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• 2018

When considering the long-term safety assessment of spent-nuclear fuel management, americium is one of the most radio-toxic actinides. Although spectroscopic methods are widely used for the study of actinide chemistry, application of those methods to americium chemistry has been limited. Herein, we purified $^{241}Am$ to obtain a highly pure stock solution required for spectroscopic studies. Quantitative and qualitative analyses of purified $^{241}Am$ were carried out using liquid scintillation counting, and gamma and alpha radiation spectrometry. Highly sensitive absorption spectrometry coupled with a liquid waveguide capillary cell and time-resolved laser fluorescence spectroscopy were employed for the study of Am(III) hydrolysis and oxalate (Ox) complexation. $Am^{3+}$ ions under acidic conditions exhibit maximum absorbance at 503 nm, with a molar absorption coefficient of $424{\pm}8cm^{-1}{\cdot}M^{-1}$. $Am(OH)_3(s)$ colloidal particles formed under near neutral pH conditions were identified by monitoring the absorbance at around 506-507 nm. The formation of ${Am(Ox)_3}^{3-}$ was detected by red-shifts of the absorption and luminescence spectra of 4 and 5 nm, respectively. In addition, considerable enhancements of the luminescence intensities were observed. The luminescence lifetime of ${Am(Ox)_3}^{3-}$ increased from 23 to 56 ns, which indicates that approximately six water molecules are replaced by carboxylate ligands in the inner-sphere of the Am(III). These results suggest that ${Am(Ox)_3}^{3-}$ is formed through the bidentate coordination of the oxalate ligands.

• Journal of the Korea institute for structural maintenance and inspection
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• 제23권3호
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• pp.92-95
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• 2019

In this paper, a novel laser-based non-contact and non-destructive stress measurement technique is newly proposed for measuring stress in steel structural members. As the demand of stress monitoring in structural members is increased, various non-destructive techniques are being applied to the field of structural health monitoring. Spectroscopic techniques are non-contact technique and widely used for chemical identification of target materials. Especially, piezospectroscopic technique is a residual stress measurement technique in thermal barrier coatings. Although the piezospectroscopic technique has high possibility of measuring structural stress in steel members, the technique has been rarely applied to this field. In this paper, piezospectroscopy-based stress measurement technique is, therefore, proposed for measuring stress in steel structural member. To do that, alumina particles have been coated onto a specimen of a structural steel rod using a thermal spray coating technique. And then, an uniaxial compression test has been conducted to the specimen to collect each fluorescence spectrum under different loading conditions. Finally, the linear relation of spectral shift and applied compressive stress of the specimen has been experimentally established.

• Korean Journal of Metals and Materials
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• 제48권5호
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• pp.456-461
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• 2010

We investigated the In-based ohmic contacts on Nitrogen-face (N-face) n-type GaN, as well as Ga-face n-type GaN, for InGaN-based vertical Light Emitting Diodes (LEDs). For this purpose, we fabricated Circular Transfer Length Method (CTLM) patterns on the N-face n-GaN that were prepared by using a laser-lift off method, as well as on the Ga-face n-GaN that were prepared by using a dry etching method. Then, In/transparent conducting oxide (TCO) and In/TiW schemes were deposited on the CTLM in order for low resistance ohmic contacts to form. The In/TCO scheme on the Ga-face n-GaN showed high specific contact resistance, while the minimum specific contact resistance was only 3${\times}$10$^{-2}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$, which can be attributed to the high sheet resistance of the TCO layer. In contrast, the In/TiW scheme on the Ga-face n-GaN produced low specific contact resistance of 2.1${\times}$10$^{5}$ $\Omega$-cm$^{2}$ after annealing at 500${^{\circ}C}$ for 1 min. In addition, the In/TiW scheme on the N-face n-GaN also resulted in a low specific contact resistance of 2.2${\times}$10$^{-4}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$. These results suggest that both the Ga-face n-GaN and N-face n-GaN.

• Composites Research
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• 제19권5호
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• pp.7-11
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• 2006

The improved SWNTs/PANi composite actuator films applicable to an artificial muscle were fabricated successfully using a new process of manufacture that consists of 90% pure single-walled carbon nanotubes (SWNT) and chemical polymerization. PANi is electrically conducting polyaniline polymer. The conductivities of the composite SWNTs/PANi film-type actuators and the pure PANi films fabricated were measured as 56.15 S/cm and 17.38 S/cm, respectively, by the 4-prove method. The conductivity of the composite actuator is 3.2 times higher than the pure PANi film. The fabricated composite actuator showed higher conductivity than any other similar ones. The quality of samples was investigated by an electron scanning microscope (SEM). To measure the actuating strains, a specially designed beam balance apparatus was developed and strains of the composite actuators was measured by a laser displacement sensor subjected to electric currents. During the operation, the sample was soaked in the $NaNO_3$ solution and the sine-wave voltage in the range of $+1V{\sim}-1V$ was applied. The length of the composite actuator changed from $l_0=12.690$ mm to $l_1=12.733$ so that the change of length was l=0.043 mm and the strain was 0.34 %. This is a very high strain for this kind of a composite actuator. Other result reported by Tahhan showed 0.23 % strain, so that the present result is improved by 48%.

• The Journal of Engineering Geology
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• 제22권1호
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• pp.67-81
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• 2012

The physical, chemical, and biological properties of clogging materials formed within groundwater wells in the Mt. Geumjeong area, Busan, Korea, were characterized. The particle size distribution (PSD) of clogging materials was measured by a laser analyzer. XRD, SEM, and TEM analyses were performed to obtain mineralogical information on the clogging materials, with an emphasis on identifying and characterizing the mineral species. In most cases, PSD data exhibited an near log-normal distribution; however, variations in frequency distribution were found in some intervals (bi-or trimodal distributions), raising the possibility that particles originated from several sources or were formed at different times. XRD data revealed that the clogging materials were mainly amorphous ironhydroxides such as goethite, ferrihydrite, and lapidocrocite, with lesser amounts of Fe, Mn, and Zn metals and silicates such as quartz, feldspar, micas, and smectite. Reddish brown material was amorphous hydrous ferriciron (HFO), and dark red and dark black materials were Fe, Mn-hydroxides. Greyish white and pale brown materials consisted of silicates. SEM observations indicated that the clogging materials were mainly HFO associated with iron bacteria such as Gallionella and Leptothrix, with small amounts of rock fragments. In TEM analysis, disseminated iron particles were commonly observed in the cell and sheath of iron bacteria, indicating that iron was precipitated in close association with the metabolism of bacterial activity. Rock-forming minerals such as quartz, feldspar, and micas were primarily derived from soils or granite aquifers, which are widely distributed in the study area. The results indicate the importance of elucidating the formation mechanisms of clogging materials to ensure sustainable well capacity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).