• Bulletin of the Korean Chemical Society
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• 제35권12호
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• pp.3583-3589
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• 2014

This study evaluated a simple and useful route to the synthesis of mesoporous $TiO_2$ microcapsules with a hollow macro-core structure. A hydrophilic precursor sol containing the surfactants in the hydrophobic solvents was deposited on PMMA polymer surfaces modified by non-thermal plasma to produce mesoporous shells after calcination. The surface of the PMMA polymer spheres was coated with $NH_4F$ and CTAB to control the interfacial properties and promote the subsequent deposition of inorganic sols. These hollow type mesoporous $TiO_2$ microcapsules could be applied as an efficient substrate for the immobilization of DNA oligonucleotides.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.244-245
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• 2009

Sol-gel coatings of $TiO_2$ have been prepared from $TiO_2$ sol and deposited by dip-coating technique on 316L stainless steel sheets in order to study the electrochemical behaviorin corrosive solutions. The influence of the coatings on the chemical corrosion of the substrate has been evaluated by potentiodynamic polarization curves in different aqueous NaCl solution at $25^{\circ}C$.

• The Korean Journal of Ceramics
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• 제1권4호
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• pp.204-208
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• 1995

The microstructure and electrical propetries were investigated for polycrystalline $Ba^{1-x}Sr_xTiO_3$(BST) thin films deposited on Pt/Ti/$SiO_2$(PTSS) and Pt/MgO(PM) substrates by metalorganic chemical vapor deposition (MOCVD). BST films on PTSS have coulmnar and porous structures, while on PM have an equiaxied and dense structure. The dielectric constant and a dissipation factor of BST films on PTSS and 20 fC/$\mu \textrm{cm}^3$ on PTSS and 12fC/$\mu \textrm{cm}^2$ on PM was obtained at an applied electric field of 0.06 MV/cm. Leakage current density of BST films on PM was smaller than that on PTSS. The leakage current density level was about $8\times10^{-8}A/\textrm{cm}^2$ at 0.04MV/cm.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2015년도 추계학술대회 논문집
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• pp.244-245
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• 2015

PEALD TiN 금속 전극을 갖는 MOS device에서 SC1 ($NH_4/H_2O_2/H_2O=1:2:5$), SPM ($H_2SO_4/H_2O_2=10:1$), $H_2O_2$ etch chemical을 이용해 TiN 식각 후 oxide 표면 잔류 Ti에 의한 전기적 특성 분석을 진행 하였다. Etch chemical 중 SPM을 이용한 소자의 전기적 특성이 우수하였는데, 이는 잔류Ti atom의 양이 다른 etch chemical을 사용한 것 대비 낮았기 때문이다. 이로 인하여 낮은 leakage current, less frequency dependence의 특성이 관찰되었다. 또한, 후속 열처리를 통해 더욱 우수한 특성이 관찰 되었다. 이러한 공정기술은 single 전극을 갖는 CMOS 형성 시 사용 될 수 있을 것으로 기대된다.

• Bulletin of the Korean Chemical Society
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• 제32권8호
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• pp.2607-2610
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• 2011

Monodispersed Ag/$TiO_2$ core/shell nanoparticles were synthesized in solution via colloid-seeded deposition process using Ag nanoparticles as colloid seeds and $Ti(SO_4)_2$ as Ti-source respectively. Silver nitrate was reduced to Ag nanoparticles with $N_2H_4{\cdot}H_2O$ in the presence of CTAB as stabilizing agent. The titania sols hydrolyzed by the $Ti(SO_4)_2$ solution deposited on the surface of Ag nanoparticles to form the Ag/$TiO_2$ core/shell nanoparticles. Inductively coupled plasma atomic emission spectrometry (ICP-AES) showed low amount of Ag ion leaching from the Ag/$TiO_2$ core/shell nanoparticles. The Ag/$TiO_2$ core/shell nanoparticles indicated excellent antibacterial effects against Escherichia coli and maintained long-term antibacterial property.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권4호
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• pp.202-208
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• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

• 한국세라믹학회지
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• 제33권2호
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• pp.177-182
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• 1996

strontium titanate (SrTiO3) thin films deposited on Pt/MgO were prepared by Plasma Enhanced Metal Orgainc Chemical vapor Deposition (Pe-MOCVD). The crystallinity of SrTiO3 thin films increased with increasing depo-sition temperature and SrF2 second phase disappeared at 55$0^{\circ}C$ The films showed a dielectric constant of 177 and a dissipation factor of 0.0195 at 100 kHz. The variation of capacitance of the films with applied voltage was small showing paraelectric properties. The charge storage density and leakage current density were 40fC/${\mu}{\textrm}{m}$2 and 3.49$\times$10-7 A/cm2 at 0.25 MV/cm, respectively.

• 전기화학회지
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• 제14권2호
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• pp.104-109
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• 2011

We fabricated CdSe-sensitized photoelectrochemical solar cell by depositing CdSe nanoparticles on nanoporous $TiO_2$ (np-$TiO_2$) via spray pyrolysis deposition method. By adjusting the amount of CdSe-sensitizer deposited on np-$TiO_2$, we can fabricate an efficient CdSe-sensitized solar cell (${\eta}$ = 3.0% under 1 sun irradiation) in polysulfide liquid electrolyte.

• Bulletin of the Korean Chemical Society
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• 제31권2호
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• pp.423-428
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• 2010

To reduce polarization of electrochemical capacitor based on carbon nanotube, titanium oxide nanoparticles were deposited by ultrasound. The pore distribution of $TiO_2$/CNT nanoparticle exhibited surface area of $341\;m^2g^{-1}$ when $TiO_2$ content was 4 wt %, which was better than that of pristine CNT with surface area of $188\;m^2g^{-1}$. The analyses indicated that titanium oxide (particle diameter < 20 nm) was deposited on the CNT surface. The electrochemical performance was evaluated by using cyclic voltammetry (CV), impedance measurement, and constant-current charge/discharge cycling techniques. The $TiO_2$/CNT composite electrode showed relatively better electrochemical behaviors than CNT electrode by increasing the specific capacitance from $22\;Fg^{-1}$ to $37\;Fg^{-1}$ in 1 M $H_2SO_4$ solution. A symmetric cell assembled with the composite electrodes showed the specific capacitance value of $11\;Fg^{-1}$ at a current loading of $0.5\;mAcm^{-2}$ during initial cycling.

• 한국재료학회지
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• 제11권9호
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• pp.751-758
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• 2001

Anatase $TiO_2$ thin films as a photocatalyst were prepared by the D.C reactive magnetron sputtering process. The $TiO_2$ thin films were deposited on Si(100) substrates under the various conditions : oxygen partial pressure, working pressure, substrate temperature, D.C power, and deposition time. The morphology of the TiO$_2$ thin films showed an island structure. At early stages of film growth, amorphous phase formed. However, during the further growth, columnar crystalline $TiO_2$grains evolved. The crystallinity of the thin films depended on the oxygen partial pressure, the working pressure and the D.C. powers.