• Journal of the Korean Chemical Society
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• v.47 no.6
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• pp.608-613
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• 2003

In order to remove particles on surface of post-oxide CMP wafer, new cleaning solution was prepared by mixing with DHF (Diluted HF), nonionic surfactant PAAE (Polyoxyethylene Alkyl Aryl Ether), DMSO (Dimethylsulfoxide) and D.I.W.. Silicone wafers were intentionally contaminated by silica, alumina and PSL (polystylene latex) which had different zeta potentials in cleaning solution. This cleaning solution under megasonic irradiation could remove particles and metals simultaneously at room temperature in contrast to traditional AMP (mixture of $NH_4OH,\;H_2O_2$ and D.I.W) without any side effects such as increasing of microroughness, metal line corrosion and deposition of organic contaminants. This suggests that this cleaning solution would be useful future application with copper CMP in brush cleaning process as well as traditional post CMP cleaning process.

• Journal of the Korean Applied Science and Technology
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• v.20 no.4
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• pp.283-288
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• 2003

Alkaline powder cleaning agents (APCAs) were prepared by blending of $Na_2CO_3$ tetrasodium pyrophosphate (TSPP). sodium orthosilicate (Na-OSi), Na-dioctyl sulfosuccinate (303C), Demol C, and MJU-100A (100A). The physical properties of APCAs tested with steel specimen showed the following results. The cleaning powers of APCA-6 ($Na_2CO_3$ 250g/TSPP 70g/Na-OSi 40g/303C 60g/Demol C 50g/100A 30g mixture) for press-rust preventing oil was 97% and 98% degreasing at 2wt%, $70^{\circ}C$ and $90^{\circ}C$, respectively; for Quenching oil, the cleaning power of APCA-6 was 95% degreasing at 2wt% and $70^{\circ}C$. From the results, it was ascertained that APCA-6 exhibited a good cleaning power. Also low foaming power tests proved that the APCA-6 maintained good defoaming effect.

• Clean Technology
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• v.14 no.3
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• pp.184-192
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• 2008

Fluoride-type cleaning agents such as 2,2,2-trifluoroethanol (TFEA) and hydrofluoroethers (HFEs) do not destroy ozone in the stratosphere and have low global warming potential compared to hydrofluorocarbons(HFCs) and hydrochlorofluorocarbons (HCFCs). Especially, HFEs which have no flash point are paid attention as next generation type of cleaning agents for chlorofluorocarbons (CFCs) since they are safe in handling and have excellent penetration ability compared to hydrocarbon cleaning agents with low flash point. Here, the physical properties and cleaning abilities of fluoride-type cleaning agents such as TFEA, HFE-7100, HFE-7200, HFE-476mec, HFE-449mec-f, AE-3000 and AE-3100E and silicide-type cleaning agents such as trifluoroetoxytrimethylsilane (TFES) and hexamethyldisilazane (HMDS) were measured and compared with those of ozone destruction substances such as CFC-113 and 1,1,1-trichloroethane. They were also compared with toxic methylene chloride (MC) and isopropyl alcohol (IPA) which are now being used as an alternative cleaning agents. As a result, TFEA and HFEs had lower cleaning ability for removal of various soils compared to chloride-type cleaning agents, but they showed excellent cleaning ability fur fluoride-type soils. TFES and HMDS also showed excellent cleaning ability for silicide-type soils.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.102-109
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• 2000

It is difficult to meet the cleanliness requirement of $10^{10}/\textrm{cm}^2$ for the giga level device fabrication with mechanical cleaning techniques like scrubbing which is widely used to remove the particles generated during Chemical Mechanical Polishing (CMP) processes. Therefore, the second cleaning process is needed to remove metallic contaminants which were not completely removed during the mechanical cleaning process. In this paper the experimental results for the removal of the metallic contaminants existing on the wafer surface using remote plasma $H_2$ cleaning and UV/$O_3$ cleaning techniques are reported. In the remote plasma $H_2$ cleaning the efficiency of contaminants removal increases with decreasing the plasma exposure time and increasing the rf-power. Also the optimum process conditions for the removal of K, Fe and Cu impurities which are easily found on the wafer surface after CMP processes are the plasma exposure time of 1min and the rf-power of 100 W. The surface roughness decreased by 30-50 % after remote plasma $H_2$ cleaning. On the other hand, the highest efficiency of K, Fe and Cu impurities removal was achieved for the UV exposure time of 30 sec. The removal mechanism of the metallic contaminants like K, Fe and Cu in the remote plasma $H_2$ and the UV/$O_3$ cleaning processes is as follows: the metal atoms are lifted off by $SiO^*$ when the $SiO^*$is evaporated after the chemical $SiO_2$ formed under the metal atoms reacts with $H^+ \; and\; e^-$ to form $SiO^*$.

• Applied Chemistry for Engineering
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• v.18 no.2
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• pp.188-193
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• 2007

Semi-solvent type cleaning agents were prepared by mixing naphthenes, natural terpene oil, surfactant and water, and measured their physical properties. And also, cleaning efficiency for flux and grease was measured by gravimetric method. By measuring the physical properties, pH for cleaning agents were 6.0~6.7, surface tension, 27.4~28.4 dyne/cm, and wetting index, 8.65~12.46 (with water), 11.99~17.43 (without water). The cleaning agent composed of naphthene, 30 wt%, natural terpene oil, 45 wt%, surfactant, 13 wt%, co-surfactant, 12 wt%, and water, 0 wt% had the largest wetting index, and shown the most effective cleaning properties for flux (98.66%) and grease (93.44%). The conductivity with $0.5{\sim}0.9{\mu}s/cm$ to the cleaning agent containing small amount of water was found to form W/O type microemulsion.

• Journal of the Korean Society for Nondestructive Testing
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• v.33 no.6
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• pp.511-518
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• 2013

Steam Generator (SG) tube, as a barrier isolating the primary coolant system from the secondary side of nuclear power plants (NPP), must maintain the structural integrity for the public safety and their efficient power generation. So, SG tubes are subject to the periodic examination and the repairs if needed so that any defective tubes are not in service. Recently, corrosion related degradations were detected in the tubes of the domestic OPR-1000 NPP, as a form of axially oriented outer diameter stress corrosion cracking (ODSCC). According to the studies on the factors causing the heat fouling as well as developing corrosion cracking, densely scaled deposits on the secondary side of the SG tubes are mainly known to be problematic causing the adverse impacts against the soundness of the SG tubes [1]. Therefore, the processes of various cleaning methods efficiently to dissolve and remove the deposits have been applied as well as it is imperative to maintain the structural integrity of the tubes after exposing to the cleaning agent. So qualification test (QT) should be carried out to assess the perfection of the chemical cleaning and QT is to apply the processes and to do ECT. In this paper, the chemical cleaning processes to dissolve and remove the scaled deposits are introduced and results of ECT on the artificial crack specimens to determine the effectiveness of those processes are represented.

• Clean Technology
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• v.10 no.2
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• pp.73-87
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• 2004

In most of industrial fields, cleaning is employed for removing soils on their products or parts. Halogenated cleaning agents such as CFC-113, 1,1,1-TCE(1,1,1-trichloroethane), MC(methylene chloride) and TCE (trichloroethylene) have been used as cleaning ones in most of companies in the world since their excellent performance of cleaning ability and good material compatibility. However, CFC-113 and 1,1,1-TCE which are ozone destruction substances are not used any more in the advanced countries because of the which are ozone destruction substances are not used any more in the advanced countries because of the Montreal protocol. MC and TCE are now used restrictively at small part of industrial fields in most of countries since they are known to be hazardous or carcinogenic materials. Thus, it is indispensible that the alternative cleaning agents which are environmental-friendly and safe, and show good cleaning ability should be developed or utilized for replacement of the halogenated cleaning agents. Aqueous/semi-aqueous cleaning agents are evaluated to be promising alternative ones among various alternatives in environmental and economical view point. In this study, commercially available 12 aqueous and 6 semi-aqueous cleaning agents were selected and their physical properties, cleaning abilities, rinsing abilities and recycling of contaminated rinse water were measured and analyzed. Aqueous cleaning agents with higher wetting index showed better cleaning ability compared with those with lower wetting index. However wetting index did not have any correlation with cleaning ability in semi-aqueous cleaning agents. It was observed that soil concentration in aqueous and semi-aqueous cleaning agents should be maintained below the certain concentrations which depend on types of clearing agents. More than 70% soils in contaminated rinse water by some of aqueous and semi-aqueous clearing agents could be separated by simple settling method. This means that some cleaning agents with high oil-water separation efficiency will be effiective for recycling oil-contaminated rinse water. It was found that contaminated rinse water with aqueous agents was purified easiy by ultrafiltration method with PAN membrane of 30 kDa.

• Tribology and Lubricants
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• v.31 no.6
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• pp.239-244
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• 2015

Chemical mechanical polishing (CMP) is one of the most important processes for enabling sub-14 nm semiconductor manufacturing. Moreover, post-CMP defect control is a key process parameter for the purpose of yield enhancement and device reliability. Due to the complexity of device with sub-14 nm node structure, CMP-induced defects need to be fixed in the CMP in-situ cleaning module instead of during post ex-situ wet cleaning. Therefore, post-CMP in-situ cleaning optimization and cleaning efficiency improvement play a pivotal role in post-CMP defect control. CMP in-situ cleaning module normally consists of megasonic and brush scrubber processes. And there has been an increasing effort for the optimization of cleaning chemistry and brush scrubber cleaning in the CMP cleaning module. Although there have been many studies conducted on improving particle removal efficiency by brush cleaning, these studies do not consider the effects of brush contamination. Depending on the process condition and brush condition, brush cross contamination effects significantly influence post-CMP cleaning defects. This study investigates brush cross contamination effects in the CMP in-situ cleaning module by conducting experiments using 300mm tetraethyl orthosilicate (TEOS) blanket wafers. This study also explores brush pre-treatment in the CMP tool and proposes recipe effects, and critical process parameters for optimized CMP in-situ cleaning process through experimental results.

• Membrane and Water Treatment
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• v.8 no.2
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• pp.149-160
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• 2017

This study investigated effects of NaOH cleaning on the intrinsic permeability of polyvinylidene fluoride (PVDF) membranes and flux recoveries and membrane resistances under various conditions encountered during ultrafiltration in water treatment plants. The NaOH cleaning using 10,000 mg/L NaOH led to discoloration of PVDF membranes and had little effect on water flux. The NaOH cleaning was efficient in removing the fouling layer caused by humic water. However, long filtration induced a fouling layer that was not removed easily by NaOH cleaning. The lower temperature during filtration yielded rapid increases in transmembrane pressure and decreases in NaOH cleaning efficiency. The alkaline cleaning of PVDF changed the membrane properties such as the hydrophobicity and morphology. Foulant properties, operational conditions such as temperature, and chemical agents should be considered for cleaning strategies for PVDF applied in water treatment.

• Korean Chemical Engineering Research
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• v.59 no.4
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• pp.632-638
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• 2021

With the copper interconnection in the semiconductor process, complex residues including copper oxide, fluoride, and polymeric fluorocarbon are formed by plasma etching. In this study, a cleaning solution was prepared with a component having an amine group (-NH₂) and a carboxyl group (-COOH), and the characteristics of removing post-etch residues in the copper wiring process were analyzed. In the cleaning solution containing an amine group, the length of the component substituted with nitrogen and the length of the carbon chain influenced the cleaning effect, and the etching rate of copper oxide increased as the pH of the cleaning solution increased. The activity of the amine group is in the basic region, and the activity of the carboxyl group is in the acidic region, and the cleaning process proceeds through complex formation with copper or copper oxide in each region.