• 한국재료학회지
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• 제14권2호
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• pp.141-145
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• 2004

Silicon nitride thin films were deposited by atomic layer deposition (ALD) technique in a batch-type reactor by alternating exposures of precursors. XJAKO200414714156408$_4$ or$ SiH_2$$Cl_2$ was used as the Si precursor, $NH_3$ was used as the N precursor, and the deposited films were characterized comparatively. The thickness of the film linearly increased with the number of deposition cycles, so that the thickness of the film can be precisely controlled by adjusting the number of cycles. As compared with the deposition using$ SiCl_4$, the deposition using $SiH_2$$Cl_2$ exhibited larger deposition rate at lower precursor exposures, and the deposited films using $SiH_2$$Cl_2$ had lower wet etch rate in a diluted HF solution. Silicon nitride films with the Si:N ratio of approximately 1:1 were obtained using either Si precursors at $500^{\circ}C$, however, the films deposited using $SiH_2$$Cl_2$ exhibited higher concentration of H as compared with those of the $SiC_4$ case. Silicon nitride thin films deposited by ALD showed similar physical properties, such as composition or integrity, with the silicon nitride films deposited by low-pressure chemical vapor deposition, lowering deposition temperature by more than $200^{\circ}C$.

• KEPCO Journal on Electric Power and Energy
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• 제1권1호
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• pp.115-120
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• 2015

$K_2CO_3$-based dry regenerable sorbents were prepared by spray-drying techniques to improve mass produced $K_2CO_3-Al_2O_3$ sorbents (KEP-CO2P, hereafter), and then tested for their $CO_2$ sorption capacity by a $2,000Nm^3/h$ (0.5 MWe) $CO_2$ capture pilot plant built for Unit 3 of the Hadong thermal power station in 2010. Each of the sample sorbents contained 35 wt.% $K_2CO_3$ as the active materials with various support materials such as $TiO_2$, MgO, Zeolite 13X, $Al_2O_3$, $SiO_2$ and hydrotalcite (HTC). Their physical properties and reactivity were tested to evaluate their applicability to a fluidized-bed or fast transport-bed $CO_2$ capture process. The $CO_2$ sorption capacity and percentage utilization of $K_2CO_3$-MgO based sorbent, Sorb-KM2, was $8.6g-CO_2/100g$-sorbents and 90%, respectively, along with good mechanical strength for fluidized-bed application. Sorbs-KM2 and KT were almost completely regenerated at $140^{\circ}C$. No degradation of Sorb-KM by $SO_2$ added as a pollutant in flue gas was observed during a cycle test.

• 자원리싸이클링
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• 제25권3호
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• pp.74-81
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• 2016

고정층 반응기에서 PVC를 염화제로 사용하여 일메나이트 광석 중 철을 선택적으로 제거하기 위한 염화반응에 대하여 조사하였다. 철의 제거율에 미치는 PVC첨가량과 반응온도의 영향에 대하여 조사하였다. 철의 제거율은 PVC 첨가량과 온도가 증가할수록 상승하였다. PVC에서 생성된 HCl가스와 반응한 후의 시편 표면에는 많은 기공이 관찰되었다. 이러한 기공에 의해서 일메나이트 입자의 중앙부분에 있는 철과 반응할 수 있었던 것으로 생각된다. 선택적 염화반응을 속도론적 모델에 의해 조사한 결과 입자 계면에서의 화학반응에 의해서 율속되는 것으로 생각된다. PVC를 사용한 일메나이트의 선택적 염화반응에서 활성화 에너지는 20.47 kJ/mol로 계산되었다.

• 전기학회논문지
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• 제66권2호
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• pp.370-378
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• 2017

A fluid model of 2D axis-symmetry based on inductively coupled plasma (ICP) reactor using $N_2/NH_3/SiH_4$ gas mixture has been developed for hydrogenated silicon nitride ($SiN_x:H$) deposition. The model was comprised of 62 species (electron, neutral, ions, and excitation species), 218 chemical reactions, and 45 surface reactions. The pressure (10~40 mTorr) and gas mixture ratio ($N_2$ 80~96 %, $NH_3$ 2~10 %, $SiH_4$ 2~10 %) were considered simulation variables and the input power fixed at 1000 W. Different distributions of electron, ions, and molecules density were observed with pressure. Although ionization rate of $SiH_2{^+}$ is higher than $SiH_3{^+}$ by electron direct reaction with $SiH_4$, the number density of $SiH_3{^+}$ is higher than $SiH_2{^+}$ in over 30 mTorr. Also, number density of $NH^+$ and $NH_4{^+}$ dramatically increased by pressure increase because these species are dominantly generated by gas phase reactions. The change of gas mixture ratio not affected electron density and temperature. With $NH_3$ and $SiH_4$ gases ratio increased, $SiH_x$ and $NH_x$ (except $NH^+$ and $NH_4{^+}$) ions and molecules are linearly increased. Number density of amino-silane molecules ($SiH_x(NH_2)_y$) were detected higher in conditions of high $SiH_x$ and $NH_x$ molecules density.

• 한국가스학회지
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• 제11권2호통권35호
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• pp.25-30
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• 2007

아세트알데히드 분해반응을 위한 촉매에 대하여 연구하였다. 촉매는 지지체 ${\gamma}-Al_2O_3$와 전이 금속 Ni, Mo, Al을 이용하여 담지법으로 제조하였으며, 촉매의 물리 화학적 성질은 SEM-EDS, XRD, XPS, BET 및 TPR 기법으로 조사하였다. 촉매의 아세트알데히드 전환효율은 $150{\sim}500^{\circ}C$온도 범위에서 마이크로 반응시스템을 통하여 GC로 측정하였으며, 8 wt% $Ni/{\gamma}-Al_2O_3$가 단일금속 촉매에서 전환효율이 가장 큰 촉매로 나타났다. 1-3 wt% $Ni-Al/{\gamma}-Al_2O_3$는 다른 이금속 촉매보다 높은 전환효율을 가지는 것으로 측정되었다.

• Nuclear Engineering and Technology
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• 제50권2호
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• pp.229-236
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• 2018

Accident-tolerant fuels (ATFs) are currently of high interest to researchers in the nuclear industry and in governmental and international organizations. One widely studied accident-tolerant fuel concept is multilayer cladding (also known as coated cladding). This concept is based on a traditional Zr-based alloy (Zircaloy-4, M5, E110, ZIRLO etc.) serving as a substrate. Different protective materials are applied to the substrate surface by various techniques, thus enhancing the accident tolerance of the fuel. This study focuses on the results of testing of Zircaloy-4 coated with pure chromium metal using the cold spray (CS) technique. In comparison with other deposition methods, e.g., Physical vapor deposition (PVD), laser coating, or Chemical vapor deposition techniques (CVD), the CS technique is more cost efficient due to lower energy consumption and high deposition rates, making it more suitable for industry-scale production. The Cr-coated samples were tested at different conditions ($500^{\circ}C$ steam, $1200^{\circ}C$ steam, and Pressurized water reactor (PWR) pressurization test) and were precharacterized and postcharacterized by various techniques, such as scanning electron microscopy, Energy-dispersive X-ray spectroscopy (EDX), or nanoindentation; results are discussed. Results of the steady-state fuel performance simulations using the Bison code predicted the concept's feasibility. It is concluded that CS Cr coating has high potential benefits but requires further optimization and out-of-pile and in-pile testing.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.74-74
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• 2000

낮은 유전상수(k$\leq$3)와 높은 열적안정성(>4$25^{\circ}C$)은 초고집적회로(ULSI)기술에서 RC 지연을 해결하기 위한 금속배선의 중간 절연층으로서의 2개의 가장 중요한 특성이다. 본 연구에서는 cyclohezane을 precursor로 사용하여 plasma enhanced chemical vapor deposition(PECVD)방법으로 유기박막을 성장시켰으며 낮은 유전상수와 높은 열적안정성을 동시에 확보하기 위하여 열적안정성은 좋지 않지만 유전상수가 낮은 박막(soft layer)위에 유전상수는 다소 높지만 열적안정성이 좋은 박막(hard layer)을 얇게 증착하여 hard layer/soft layer의 2층 구조를 형성하여서 구조적, 전기적 특성을 조사하였다. 유기박막은 5$0^{\circ}C$로 유지된 reactor 내부에서 argon(Ar) plasma에 의해 증착되었으며 platinum(Pt)기판과 silicon 기판위에 동시에 증착하였다. Pt 기판위에 증착한 시편으로 유전상수, I-V 등 전기적 특성을 측정하였고, silicon 기판위에 증착한 시편으로 열적안정성과 구조적 특성등을 분석하였다. 증착압력 0.2Torr에서 plasma power를 5W에서90W로 증가할 때 유전상수는 2.36에서 3.39로 증가하였으며 열적안정성은 90W에서 180W로 증가하였을 때 유전상수는 2.42에서 2.79로 증가하엿고 열적안정성은 모두30$0^{\circ}C$이하였다. 단일층 구조에서는 유전상수가 낮은 박막은 열적으로 불안정하고 열적 안정성이 좋은 박막은 유전상수가 다소 높은 문제가 나타났다. 이런 문제를 해결하기 위하여 2 Torr, 120W에서 증착한 유전상수가 2.55이고 열적으로 불안정한 박막을 soft layer로 5150 증착하고 그 위에 0.2Torr, 90W에서 증착한 유전상수가 3.39이고 열적으로 45$0^{\circ}C$까지 안정한 박막을 hard layer로 360 , 720 , 1440 증착하였다. 증착된 2층구조 박막의 유전상수는 각각 2.62, 2.68, 2.79이었으며 열적안정성 측정에서는 40$0^{\circ}C$까지 두께 감소가 보이지 않았다. 그러나 SEM 측정에서 열처리 후 표면이 거칠어지는 현상이 발견되었다.

• 대한기계학회논문집A
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• 제36권9호
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• pp.1095-1101
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• 2012

수소를 대량으로 생산하기 위한 원자력수소생산시스템에서 공정열교환기(PHE)는 초고온가스로로 부터 생성된 초고온 열을 화학반응공정으로 전달하는 핵심기기이다. 한국원자력연구원에 구축되어 있는 소형 질소가스루프에서 Hastelloy-X로 제작된 소형 및 중형 PHE 시제품들에 대한 성능시험이 수행되고 있다. 그동안 PHE 시제품에 대한 거시적 고온구조해석은 용접 물성치의 부재로 인해 모재의 물성치만을 사용한 해석이 주로 수행되었으나 본 연구에서는 계장형 압입시험법으로부터 얻은 용접부 기계적 물성치를 이용하여 거시적 고온구조해석을 수행하고 그 결과를 비교, 분석하였다.

• 한국축산시설환경학회지
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• 제9권1호
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• pp.45-56
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• 2003

$TAO^{TM}$ System is an auto-heated thermophilic aerated digestion process using a proprietary microbe called as a Phototropic Bacteria (PTB). High metabolic activity results in heat generation, which enables to produce a pathogen-free and digested liquid fertilizer at short retention times. TAO$^{TM}$ system has been developed to reduce a manure volume and convert into the liquid fertilizer using swine manure since 1992. About 100 units have been installed and operated in Korean swine farms so far. TAO$^{TM}$ system consists of a reactor vessel and ejector-type aeration pumps and foam removers. The swine slurry manure enters into vessel with PTB and is mixed and aerated. The process is operated at detention times from 2 to 4 days and temperature of 55 to $65^{\circ}C$. Foams are occurred and broken down by foam removers to evaporate water contents. Generally, at least 30% of water content is evaporated, 99% of volatile fatty acids caused an odor are removed and pathogen destruction is excellent with fecal coliform, rotavirus and salmonella below detection limits. The effluent from TAO$^{TM}$ system, called as the "TAO EFFLUX", is screened and has superb properties as a fertilizer. Normally N-P-K contents of screened TAO Efflux are 4.7 g/L, 0.375 g/L and 2.8 g/L respectively. The fertilizer effect of TAO EFFLUX compared to chemical fertilizer has been demonstrated and studied with various crops such as rice, potato, cabbage, pumpkin, green pepper, parsley, cucumber and apple. Generally it has better fertilizer effects and excellent soil fertility improvement effects. Moreover, the TAO EFFLUX is concentrated through membrane technology without fouling problems for a cost saving of long distance transportation and a commercialization (crop nutrient commodity) to a gardening market, for example.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.276-279
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• 2004

Plasma enhanced chemical vapor deposition (PECVD) of silicon nitride (SiN) is a proven technique for obtaining layers that meet the needs of surface passivation and anti-reflection coating. In addition, the deposition process appears to provoke bulk passivation as well due to diffusion of atomic hydrogen. This bulk passivation is an important advantage of PECVD deposition when compared to the conventional CVD techniques. A further advantage of PECVD is that the process takes place at a relatively low temperature of 300t, keeping the total thermal budget of the cell processing to a minimum. In this work SiN deposition was performed using a horizontal PECVD reactor system consisting of a long horizontal quartz tube that was radiantly heated. Special and long rectangular graphite plates served as both the electrodes to establish the plasma and holders of the wafers. The electrode configuration was designed to provide a uniform plasma environment for each wafer and to ensure the film uniformity. These horizontally oriented graphite electrodes were stacked parallel to one another, side by side, with alternating plates serving as power and ground electrodes for the RF power supply. The plasma was formed in the space between each pair of plates. Also this paper deals with the fabrication of multicrystalline silicon solar cells with PECVD SiN layers combined with high-throughput screen printing and RTP firing. Using this sequence we were able to obtain solar cells with an efficiency of 14% for polished multi crystalline Si wafers of size 125 m square.