• Geomechanics and Engineering
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• 제11권3호
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• pp.373-383
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• 2016

As one natural material, the physical and mechanical properties of rock will be affected very largely by chemical erosion environment. Under chemical environment, the strength of rock will be reduced. Considering the effect of the chemical erosion, fracture factor of rock is reduced. The damage variable is applied to express the change of fracture stress. Therefore, the fracture criterion of rock under chemical environment is constructed. By one experiment of rock fracture under chemical erosion environment, the proposed fracture criterion is verified. The results show that, the fracture path by theory is agree with the testing one well.

• Korean Chemical Engineering Research
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• 제43권4호
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• pp.525-530
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• 2005

상용 순환 유동층 연소로(200 ton steam/hr, $4.97{\times}9.90{\times}28.98m$)의 수관벽에서 전열관의 마모속도를 측정 및 고찰하였다. 전열관의 두께는 초음파 측정방법을 이용하여 측정되었다. Splash 영역에서 윙월을 포함한 모든 수관벽 전열관의 마모속도가 두드러졌다. 전열관의 마모속도는 분배기로부터 높이가 증가함에 따라서 감소한 후 다시 증가하였다. 프리보드 기체출구 부근의 윙월에서는 기체 및 고체흐름의 편향성으로 인한 마모속도의 차이도 나타났다. 윙월의 마모속도는 연소로 단면의 중앙에 위치할수록 크게 나타났다.

• 한국정밀공학회지
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• 제18권12호
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• pp.192-199
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• 2001

Chemical mechanical planarization (CMP) has emerged as the planarization technique of choice in both front-end and back-end integrated circuit manufacturing. Conventional CMP process utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. There hale been serious problems in CMP in terms of repeatability and deflects in patterned wafers. Especial1y, dishing and erosion defects increase the resistance because they decrease the interconnection section area, and ultimately reduce the lifetime of the semiconductor. Methods to reduce dishing & erosion have recently been interface hardness of the pad, optimization of the pattern structure as dummy patterns. Dishing & erosion are initially generated an uneven pressure distribution in the materials. These defects are accelerated by free abrasives and chemical etching. Therefore, it is known that dishing & erosion can be reduced by minimizing the abrasive concentration. Minimizing the abrasive concentration by using CeO$_2$is the best solution for reducing dishing & erosion and for removal rate. This paper introduce dishing & erosion generating mechanism and a method fur developing a semi-rigid abrasive pad to minimize dishing & erosion during CMP.

• Korean Chemical Engineering Research
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• 제43권3호
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• pp.412-418
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• 2005

상용 순환 유동층 연소로(200 ton steam/hr, $4.97{\times}9.90{\times}28.98m$)의 수관벽에서 전열관의 두께분포를 측정하였으며, 전열관 마모를 고찰하였다. 전열관의 두께는 초음파 측정방법을 이용하여 측정되었다. Splash 영역에서 윙월을 포함한 모든 수관벽 전열관의 마모가 심하게 발생하였다. 전면과 후면의 수관벽 하부 옆면벽에 가까운 양편에서 마모가 더 큰 것으로 나타났다. 기체출구 부근벽의 일부 전열관에서 상당한 전열관 마모가 발생되었다. 윙월에서는 연소로 단면의 내부로 들어올수록 전열관의 마모가 증가되는 것으로 나타났다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2001년도 춘계학술대회 논문집
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• pp.1117-1120
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• 2001

Chemical mechanical planarization(CMP) has emerged as the planarization technique of choice in both front-end and back-end integrated circuit manufacturing. Conventional CMP process utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. There have been serious problems in CMP in terms of repeatability and defects in patterned wafers. Since IBM's official announcement on Copper Dual Damascene(Cu2D) technology, the semiconductor world has been engaged in a Cu2D race. Today, even after~3years of extensive R&D work, the End-of-Line(EOL) yields are still too low to allow the transition of technology to manufacturing. One of the reasons behind this is the myriad of defects associated with Cu technology. Especially, dishing and erosion defects increase the resistance because they decrease the interconnection section area, and ultimately reduce the lifetime of the semiconductor. Methods to reduce dishing & erosion have recently been interface hardness of the pad, optimization of the pattern structure as dummy patterns. Dishing & erosion are initially generated an uneven pressure distribution in the materials. These defects are accelerated by free abrasive and chemical etching. Therefore, it is known that dishing & erosion can be reduced by minimizing the abrasive concentration. Minimizing the abrasive concentration by using Ce$O_2$ is the best solution for reducing dishing & erosion and for removal rate. This paper introduce dishing & erosion generating mechanism and a method for developing a semi-rigid abrasive pad to minimize dishing & erosion during CMP.

• Korean Chemical Engineering Research
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• 제56권1호
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• pp.133-138
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• 2018

2000년대 이후 대두된 안전, 환경 이슈들로 인해 안전 관리는 더욱 더 중요해졌다. 하지만 안전 관리는 많은 경험적 데이터들을 요구하므로 한계점들이 많다. 안전 분야 중 하나인 배관 안전의 경우 현재 배관을 관리하는 시뮬레이션 프로그램들이 존재하지만, 배관 내부 침식에 대해서는 데이터를 얻기 힘들어 시뮬레이션에 반영이 잘 되어있지 않은 상태이다. 이러한 문제점에서 착안해 본 연구에서는 전산유체역학(CFD)을 이용하여 배관 내부의 곡면에 일어나는 침식을 모사하였고, 계산한 침식 속도를 바탕으로 한계상태함수를 이용하여 배관의 실패 주기를 분석하였다. CFD 대상 배관의 경우 여수 산업 단지에 실제로 운영되고 있는 표본을 사용하였다. DPM (Discrete Phase Model)과 부식 모델을 이용하여 CFD 결과로 $3.093mm{\cdot}yr^{-1}$ 수치의 침식 속도를 얻을 수 있었고, 이 결과를 한계상태함수에 적용한 결과 배관에 누출(leak)을 유발하는데 14.2년, 파열(burst)를 유발하는데 28.2년이라는 실패 주기를 얻어낼 수 있었다. 이러한 과정들을 통해 배관 곡면 침식이 배관 안전 진단에 유효한 실패 모드임을 도출할 수 있었다. 본 연구는 실패 연도를 구할 수 있는 방법론들을 제시하여 데이터의 한계점을 극복하고, 배관 안전 진단에 좀 더 정밀하고 발전된 방법을 제시한 것에 대해 의의를 가진다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.140-143
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• 2004

Chemical mechanical polishing(CMP) is essential technology to secure the depth of focus through the global planarization of wafer. But a variety of defects such as contamination, scratch, dishing, erosion and corrosion are occurred during CMP. Especially, dishing and erosion defects increase the resistance because they decrease the interconnect section area, and ultimately reduce the life time of the semiconductor. Due to this dishing and erosion must be prohibited. The pattern density and size in chip have a significant influence on dishing and erosion occurred over-polishing. Decreasing of abrasive concentration results in advanced pattern selectivity which can lead the uniform removal in chip and decrease of over-polishing. The fixed abrasive pad was applied and tested to reduce dishing and erosion in this paper. Consequently, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with proposed fixed abrasive pad and chemicals.

• 한국정밀공학회지
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• 제22권2호
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• pp.38-45
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• 2005

Chemical mechanical polishing(CMP) has been widely accepted for the planarization of multi-layer structures in semiconductor fabrication. But a variety of defects such as abrasive contamination, scratch, dishing, erosion and corrosion are occurred during CMP. Especially, dishing and erosion defects increase the metal resistance because they decrease the interconnect section area, and ultimately reduce the lift time of the semiconductor. Due to this reason dishing and erosion must be prohibited. The pattern density and size in chip have a significant influence on dishing and erosion occurred by over-polishing. The fixed abrasive pad(FAP) was applied and tested to reduce dishing and erosion in this paper. The abrasive concentration decrease of FAP results in advanced pattern selectivity which can lead the uniform removal in chip and declining over-polishing. Consequently, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with proposed FAP and chemicals.

• 한국추진공학회지
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• 제19권6호
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• pp.54-63
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• 2015

본 연구에서는 고온/고압의 연소가스에 의해 야기되는 노즐목 삭마현상의 분자수준 메커니즘을 분자동역학 시뮬레이션을 이용하여 관찰한다. 노즐목은 두 개의 그래핀으로 구성된 그래파이트로 모델링하고 분자동역학 시뮬레이션은 충분한 속도를 가지고 그래파이트에 충돌하는 $H_2O$ 분자와 $CO_2$ 분자가 지속적으로 생성되는 과정과 평형상태의 시뮬레이션으로 구성된다. 반응을 모사할 수 있는 ReaxFF 포텐셜을 사용하며, 충돌에 의해 야기되는 $H_2O$ 및 $CO_2$ 분자의 해리와 화학적 삭마와의 관계에 중점을 두고 관찰하고자 하며, 거시적인 관찰결과들과 비교하고자 한다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1578-1580
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• 1999

Silicone rubber is being used for the housing material of outdoor high voltage insulators such as composite insulator, bushing, surge arrestor and cable terminator because of good tracking and erosion resistance, good hydrophobicity and recovery of hydrophobicity, and chemical stability. In this paper, tracking and erosion resistance of silicone rubber having fluids and different ATH contents were examined. Fluids were selected under the consideration of their molecular weight and chemical structure, expecting the high migration rate, the good pollutant encapsulation, and the long period with good hydrophobicity. Good tracking and erosion resistance and arc resistance have been achieved for the silicone rubber above ATH content 130 phr.