• Geomechanics and Engineering
• /
• v.11 no.3
• /
• pp.373-383
• /
• 2016

As one natural material, the physical and mechanical properties of rock will be affected very largely by chemical erosion environment. Under chemical environment, the strength of rock will be reduced. Considering the effect of the chemical erosion, fracture factor of rock is reduced. The damage variable is applied to express the change of fracture stress. Therefore, the fracture criterion of rock under chemical environment is constructed. By one experiment of rock fracture under chemical erosion environment, the proposed fracture criterion is verified. The results show that, the fracture path by theory is agree with the testing one well.

• Korean Chemical Engineering Research
• /
• v.43 no.4
• /
• pp.525-530
• /
• 2005

The erosion rate of water wall tube has been measured and discussed in a commercial circulating fluidized bed combustor (200 ton steam/hr, $4.97{\times}9.90{\times}28.98m\;height$). Tube thickness was measured with ultrasonic method. Severe tube erosion rate was observed in the splash region on all waterwalls including wingwalls. The tube erosion rate increased after an initial decrease as height from the distributor increased. The difference of erosion rate among wing walls was found due to unbalanced distribution of gas and solid flow rates. The erosion rate of the wing wall increased as location of the wing wall became closer to the center of combustor crosssection.

• Journal of the Korean Society for Precision Engineering
• /
• v.18 no.12
• /
• pp.192-199
• /
• 2001

Chemical mechanical planarization (CMP) has emerged as the planarization technique of choice in both front-end and back-end integrated circuit manufacturing. Conventional CMP process utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. There hale been serious problems in CMP in terms of repeatability and deflects in patterned wafers. Especial1y, dishing and erosion defects increase the resistance because they decrease the interconnection section area, and ultimately reduce the lifetime of the semiconductor. Methods to reduce dishing & erosion have recently been interface hardness of the pad, optimization of the pattern structure as dummy patterns. Dishing & erosion are initially generated an uneven pressure distribution in the materials. These defects are accelerated by free abrasives and chemical etching. Therefore, it is known that dishing & erosion can be reduced by minimizing the abrasive concentration. Minimizing the abrasive concentration by using CeO$_2$is the best solution for reducing dishing & erosion and for removal rate. This paper introduce dishing & erosion generating mechanism and a method fur developing a semi-rigid abrasive pad to minimize dishing & erosion during CMP.

• Korean Chemical Engineering Research
• /
• v.43 no.3
• /
• pp.412-418
• /
• 2005

The tube thickness map of water wall has been measured in a commercial circulating fluidized bed combustor (200 ton steam/hr, $4.97{\times}9.90{\times}28.98m$ height) with ultrasonic method and tube erosion has been discussed. Severe tube erosion took place in the splash region on all waterwalls including wingwalls. Erosion on the lower part of front and rear walls, close to both side walls, was more serious than other places. Erosion of some tubes around the gas exit was found to be noticible. Tube erosion increased on the wingwall as the position of the tube become closer to the center of the combustor crosssection.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2001.04a
• /
• pp.1117-1120
• /
• 2001

Chemical mechanical planarization(CMP) has emerged as the planarization technique of choice in both front-end and back-end integrated circuit manufacturing. Conventional CMP process utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. There have been serious problems in CMP in terms of repeatability and defects in patterned wafers. Since IBM's official announcement on Copper Dual Damascene(Cu2D) technology, the semiconductor world has been engaged in a Cu2D race. Today, even after~3years of extensive R&D work, the End-of-Line(EOL) yields are still too low to allow the transition of technology to manufacturing. One of the reasons behind this is the myriad of defects associated with Cu technology. Especially, dishing and erosion defects increase the resistance because they decrease the interconnection section area, and ultimately reduce the lifetime of the semiconductor. Methods to reduce dishing & erosion have recently been interface hardness of the pad, optimization of the pattern structure as dummy patterns. Dishing & erosion are initially generated an uneven pressure distribution in the materials. These defects are accelerated by free abrasive and chemical etching. Therefore, it is known that dishing & erosion can be reduced by minimizing the abrasive concentration. Minimizing the abrasive concentration by using Ce$O_2$ is the best solution for reducing dishing & erosion and for removal rate. This paper introduce dishing & erosion generating mechanism and a method for developing a semi-rigid abrasive pad to minimize dishing & erosion during CMP.

• Korean Chemical Engineering Research
• /
• v.56 no.1
• /
• pp.133-138
• /
• 2018

Safety management has become even more important because of the safety and environmental issues that have arisen since the 2000s. However, the safety study requires many empirical data, so there are many limitations. In the case of pipe safety, simulation programs exist, but it is difficult to get data about the pipe internal erosion of the pipe. In this study, the erosion rate of the pipe elbow was simulated using computational fluid dynamics (CFD). Also, the failure period of the pipe was calculated by the limit state function using erosion rate. In the case of CFD pipe, a sample which is actually operated in Yeosu industrial complex was used, and the geometry and mesh formation were rationalized in terms of typical fluid dynamics simulations. Using the Discrete Phase Model (DPM) and the corrosion model, the erosion rate ($3.09227mm{\cdot}yr^{-1}$) was obtained from CFD simulations. As a result of applying the erosion rate to the limit state function, we obtained the pipe failure period value, 14.2 years to trigger a leak and 28.2 years to trigger a burst. Through these processes, we concluded that pipe erosion is one of the major failure modes. In addition to the results, this study has significance for suggesting the methodology of the pipe safety study.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.140-143
• /
• 2004

Chemical mechanical polishing(CMP) is essential technology to secure the depth of focus through the global planarization of wafer. But a variety of defects such as contamination, scratch, dishing, erosion and corrosion are occurred during CMP. Especially, dishing and erosion defects increase the resistance because they decrease the interconnect section area, and ultimately reduce the life time of the semiconductor. Due to this dishing and erosion must be prohibited. The pattern density and size in chip have a significant influence on dishing and erosion occurred over-polishing. Decreasing of abrasive concentration results in advanced pattern selectivity which can lead the uniform removal in chip and decrease of over-polishing. The fixed abrasive pad was applied and tested to reduce dishing and erosion in this paper. Consequently, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with proposed fixed abrasive pad and chemicals.

• Journal of the Korean Society for Precision Engineering
• /
• v.22 no.2
• /
• pp.38-45
• /
• 2005

Chemical mechanical polishing(CMP) has been widely accepted for the planarization of multi-layer structures in semiconductor fabrication. But a variety of defects such as abrasive contamination, scratch, dishing, erosion and corrosion are occurred during CMP. Especially, dishing and erosion defects increase the metal resistance because they decrease the interconnect section area, and ultimately reduce the lift time of the semiconductor. Due to this reason dishing and erosion must be prohibited. The pattern density and size in chip have a significant influence on dishing and erosion occurred by over-polishing. The fixed abrasive pad(FAP) was applied and tested to reduce dishing and erosion in this paper. The abrasive concentration decrease of FAP results in advanced pattern selectivity which can lead the uniform removal in chip and declining over-polishing. Consequently, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with proposed FAP and chemicals.

• Journal of the Korean Society of Propulsion Engineers
• /
• v.19 no.6
• /
• pp.54-63
• /
• 2015

We present a microscopic understanding of the chemical erosion due to combustion product on the nozzle throat using molecular dynamics simulations. The present erosion process consists of molecule-addition step and equilibrium step. First, either $CO_2$ or $H_2O$ are introduced into the system with high velocity to provoke the collision with graphite surface. Then, the equilibrium simulation is followed. The collision-included dissociation and its influence on the erosion is emphasized and the present molecular observations are compared with the macroscopic chemical reaction model.

• Proceedings of the KIEE Conference
• /
• 1999.07d
• /
• pp.1578-1580
• /
• 1999

Silicone rubber is being used for the housing material of outdoor high voltage insulators such as composite insulator, bushing, surge arrestor and cable terminator because of good tracking and erosion resistance, good hydrophobicity and recovery of hydrophobicity, and chemical stability. In this paper, tracking and erosion resistance of silicone rubber having fluids and different ATH contents were examined. Fluids were selected under the consideration of their molecular weight and chemical structure, expecting the high migration rate, the good pollutant encapsulation, and the long period with good hydrophobicity. Good tracking and erosion resistance and arc resistance have been achieved for the silicone rubber above ATH content 130 phr.