• Polymer(Korea)
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• v.25 no.5
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• pp.719-727
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• 2001

Recently it was found that the charge carrier transport properties are significantly enhanced due to effective intermolecular $\pi$-orbital overlapping and low disorder of hopping sites caused by self-organization of liquid crystal molecules. In this study, the xerographic properties of a double-layer photoconductor doped with nematic liquid crystal, 4-pentyl-4'-cyanoterphenyl (5CT), as a charge-carrier transport material to enhance the charge-tarrier mobility were investigated. From the results of measured surface voltage properties for the photoconductor doped with various concentrations of liquid crystal, 5CT, the initial voltage was found to increase with the concentration of 5CT and the dark decay decreased with the concentration of 5CT. The highest sensitivity was obtained at a specific concentration, 40wt% 5CT. The fluorescence behavior of the carrier transport layer (CTL) was also investigated. It was found that the charge-carrier transport properties of the organic photoconductor depend on the charge-carrier transport properties of the complex. The TNF : 5CT (40 wt%) and OXD : 5CT (40 wt%)samples showed the highest sensitivity because the greatest charge transport complex was termed between the charge-carrier transport materials in these samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.497-500
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.107-111
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• 2015

Our work is based on the development of a numerical model to develop a methodology for predicting the aging and breakdown in insulation due to the dynamics of space charge packets. The model of bipolar charge transports is proposed to simulate space charge dynamic for high DC voltage in law-density polyethylene (LDPE), taking into account the trapping and detrapping of recombination phenomena, this model has been developed and experimentally validation. Theoretical formulation of the physical problem is based on the Poisson, the continuity and the transport equations as well as on the appropriate models for injection. Numerical results provide temporal and local distributions of the electric field, the space charge density for the different kinds of charges, conduction and displacement current densities, and the external current.

• Proceedings of the KIEE Conference
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• 2008.09a
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• pp.229-230
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• 2008

The investigations included the measurements of volume currents and also internal space charges on epoxy samples of mm thicknesses. The current versus time relations were shown to correspond well with classical forms of dielectric response such as the Curie-von Schweidler model. After the time transient, near steady currents were extremely small and exhibited a significant temperature dependence, similar in relation to the Poole-Frenkel hoping transport model. Equivalent resistances were on the order of $10^{19}$ ohms and represent very weak charge transport. Electrically stimulated acoustic waves were used to quantify the small internal charges that would accumulate within the epoxy. There was a notable homocharge near both anode and cathode. The dielectric response and the internal charge were related to show a consistent model for charge transport within unfilled epoxy.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.2311-2312
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• 2008

The investigations included the measurements of volume currents and also internal space charges on epoxy samples of mm thicknesses. The current versus time relations were shown to correspond well with classical forms of dielectric response such as the Curie-von Schweidler model. After the time transient, near steady currents were extremely small and exhibited a significant temperature dependence, similar in relation to the Poole-Frenkel hoping transport model. Equivalent resistances were on the order of 1019 ohms and represent very weak charge transport. Electrically stimulated acoustic waves were used to quantify the small internal charges that would accumulate within the epoxy. There was a notable homocharge near both anode and cathode. The dielectric response and the internal charge were related to show a consistent model for charge transport within unfilled epoxy.

• Archives of Metallurgy and Materials
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• v.65 no.3
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• pp.1063-1067
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• 2020

Dynamic charge carrier transport behavior in the zirconium (Zr) oxide was investigated based on the frequency-dependent capacitance-voltage (C-V) and temperature-dependent current-voltage (I-V) measurements. The Zr oxide was formed on the ZIRLO and newly developed zirconium-based alloy (NDZ) by corrosion in the PWR-simulated loop at 360℃. The corrosion test for 90 days showed that the NDZ exhibits better corrosion resistance than ZIRLO alloy. Based on the C-V measurement, dielectric constant values for the Zr oxide was estimated to be 11.28 and 11.52 for the ZIRLO and NDZ. The capacitance difference between low and high frequency was larger in the ZIRLO than in the NDZ, which was attributed to more mobile electrical charge carriers in the oxide layer on the ZIRLO alloy. The current through the oxide layers on the ZIRLO increased more drastically with increasing temperature than on the NDZ, which indicating that more charge trap sites exist in the ZIRLO than in NDZ. Based on the dynamic charge carrier transport behavior, it was concluded that the electrical charge carrier transport within the oxide layers was closely related with the corrosion behavior of the Zr alloys.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.6
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• pp.305-311
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• 2004

Charge transport phenomena of polyaniline-DBSA/High Impact Polystyrene (PAM-DBSA/HIPS) blends have been studied through an examination of electrical conduction. HIPS used host polymer in the blends and PANI-DBSA obey a space charge limited conduction mechanism and a ohmic conduction mechanism respectively. However, PANI-DBSA/HIPS blends do not obey any classical conduction mechanism. Analysis of conduction mechanism revealed that the charging current of PANI-DBSA/HIPS blends increased with the increase of PANI-DBSA content. This result migrlt be explained by the reduction in the distance between PANI-DBSA particles enabling the charge carriers to migrate from a chain to a neighboring chain via hopping or micro tunneling. It was also found that the charging current of PANI-DBSA/HIPS blends decreased as the temperature was elevated, which is of typical phenomena in metals. It is speculated that the charge transport in PANI-DBSA particle was somewhat constrained due to strong phonon scattering.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.497-500
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e.g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current. 缀Ѐ㘰〻ሀ䝥湥牡氠瑥捨湯汯杹

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.501-504
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• 2001

We used time-of-flight method to analyze transport properties of charge carrier which is produced by X-ray exposure. It is the research of charge transport and specific property of trap that is performed in direct digital x-ray image receptor. But the results shows us different measurement value of electron and charge drift mobility and it is difficult to precise analysis about charge transport properties and trap mechanism. We measured transit time and drift mobility of charge carriers using time-of-flight method to evaluate the correlation of a-Se thickness change and electric field. We made a testing glass with a-Se of 400 ${\mu}m$ thickness on coming glass using thermoevaporation method and built Au electrode with 300nm, $2{\varphi}$ on both sides of a-Se, As a result of this experiment, electron and hole transit time was each $229.17{\mu}s$ and $8.73{\mu}s$ at $10V/{\mu}m$ electric field and Drift mobility was each $0.00174 cm^{2}/V{\cdot}s$, $0.04584cm^{2}/V{\cdot}s$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.501-504
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• 2001

We used time-of-flight method to analyse transport properties of charge carrier which is produced by X-ray exposure. It is the research of charge transport and specific property of trap that is performed in direct digital x-ray image receptor. But the results shows us different measurement value of electron and charge drift mobility and it is difficult to precise analysis about charge transport properties and trap mechanism. We measured transit time and drift mobility of charge carriers using time-of-fight method to evaluate the correlation of a-Se thickness change and electric field. We made a testing glass with a-Se of 470 ${\mu}{\textrm}{m}$ thickness on corning glass using thermoevaporation method and built Au electrode with 300nm, 2$\phi$ on both sides of a-Se. As a result of this experiment, electron and hole transit time was each 229.17 $\mu$s and 8.737 $\mu$s at 10V/${\mu}{\textrm}{m}$ electric field and Drift mobility was each 0.00174 $\textrm{cm}^2$/V.s, 0.04584 $\textrm{cm}^2$/V.s.