• Title/Summary/Keyword: Charge density

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Improved structures of stainless steel current collector increase power generation of microbial fuel cells by decreasing cathodic charge transfer impedance

  • Nam, Taehui;Son, Sunghoon;Kim, Eojn;Tran, Huong Viet Hoa;Koo, Bonyoung;Chai, Hyungwon;Kim, Junhyuk;Pandit, Soumya;Gurung, Anup;Oh, Sang-Eun;Kim, Eun Jung;Choi, Yonghoon;Jung, Sokhee P.
    • Environmental Engineering Research
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    • v.23 no.4
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    • pp.383-389
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    • 2018
  • Microbial fuel cell (MFC) is an innovative environmental and energy system that converts organic wastewater into electrical energy. For practical implementation of MFC as a wastewater treatment process, a number of limitations need to be overcome. Improving cathodic performance is one of major challenges, and introduction of a current collector can be an easy and practical solution. In this study, three types of current collectors made of stainless steel (SS) were tested in a single-chamber cubic MFC. The three current collectors had different contact areas to the cathode (P $1.0cm^2$; PC $4.3cm^2$; PM $6.5cm^2$) and increasing the contacting area enhanced the power and current generations and coulombic and energy recoveries by mainly decreasing cathodic charge transfer impedance. Application of the SS mesh to the cathode (PM) improved maximum power density, optimum current density and maximum current density by 8.8%, 3.6% and 6.7%, respectively, comparing with P of no SS mesh. The SS mesh decreased cathodic polarization resistance by up to 16%, and cathodic charge transfer impedance by up to 39%, possibly because the SS mesh enhanced electron transport and oxygen reduction reaction. However, application of the SS mesh had little effect on ohmic impedance.

Space Charge Phenomena in Polyimide Films and Effects of Absorbed Water (폴리이미드 박막의 공간전하현상 및 수분의 영향)

  • Yun, Ju-Ho;Choi, Yong-Sung;Hwang, Jong-Sun;Lee, Kyung-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.04c
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    • pp.82-85
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    • 2008
  • Polyimide is widely used as a high-temperature insulating material. Space charge distributions in polyimide (PI) films strongly depend upon electric field, temperature, water content and so on. We observed space charge distributions in PI films with various water contents. When a dc field was applied to as-received PI films or water-treated PI films, positive and negative homo space charges were observed near the respective electrodes at 333 K. In dried PI films, the homo space charges were much reduced, and positive and negative hetero space charges in the bulk were clearly observed. The space charge amounts in water-treated PI films were smaller than in as-received ones, while the current density in water-treated PI film was larger than that in as-received one by two or more orders of magnitude. These suggest not only that the charge injection from the electrode is enhanced by absorbed water but also that absorbed water makes carriers mobile. The decay of space charge was also faster in water-treated PI than in as-received or dried one. This also supports the enhancement of apparent mobilities of carriers in PI by absorbed water.

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Space Charge Phenomena in Polyimide Films (폴리이미드 박막의 공간전하현상)

  • Yun, Ju-Ho;Choi, Yong-Sung;Lee, Kyung-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.311-312
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    • 2007
  • Polyimide is widely used as a high-temperature insulating material. Space charge distributions in polyimide (PI) films strongly depend upon electric field, temperature, water content and so on. We observed space charge distributions in PI films with various water contents. When a dc field was applied to as-received PI films or water-treated PI films, positive and negative homo space charges were observed near the respective electrodes at 333 K. In dried PI films, the homo space charges were much reduced, and positive and negative hetero space charges in the bulk were clearly observed. The space charge amounts in water-treated PI films were smaller than in as-received ones, while the current density in water-treated PI film was larger than that in as-received one by two or more orders of magnitude. These suggest not only that the charge injection from the electrode is enhanced by absorbed water but also that absorbed water makes carriers mobile. The decay of space charge was also faster in water-treated PI than in as-received or dried one. This also supports the enhancement of apparent mobilities of carriers in PI by absorbed water.

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Density Functional Theory of PTCDA Adsorption on Si(111)In-8×8 at Room Temperature

  • Hyeon, Jeong-Min
    • Proceeding of EDISON Challenge
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    • 2014.03a
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    • pp.475-477
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    • 2014
  • Self-assembly of the molecular system of perylene-3,4,9,10-tetracarboxylic-3,4,9,10-dianhydride (PTCDA) is of such potential importance for organic semiconductor devices that PTCDA molecule on a variety of substrates has been extensively studied. Therefore we studied the density of states (DOS), the charge densities, and intermolacular bond lengths for PTCDA, and investigated PTCDA absorptioni sites on Si(111)In-$8{\times}8$ at room temperature using the density functional theory calculations.

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A Study on the Space Charge Polarity Measurement Teasurement Technology of Cross-Linked Polyethylene for Power Cable (전력케이블용 가교폴리에틸렌의 공간전하 극성측정기술에 관한 연구)

  • 국상훈;서장수;김병인;박중순
    • The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.6 no.6
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    • pp.23-31
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    • 1992
  • Charged particle in the polymers is supposed to affect the electrical conduction and to lead them th dielectrical breakdown finally. So we measured the space charge distribution made by application of high electric field and evaluated the polarity of the charged particle affected on electrical conduction and space charge formed in the insulating materials by using temperature gradient thermally stimulated current measurement method(TG-TSC measurement). As a result, in the cross-linked polyethylene, A-peak was caused from dipole polarization, C-peak was caused from ionic space charge polarization and D-peak was injected trap hole. Also we found it crossible the evaluated the polarity of injected trap carrier and electron(or hole) of carrier trap in the cross-lined polyethylene. We found that ${\gamma}$-ray irradiated low density polyethylene had a relation to the electronic trap and we also could get the value of electric field distribution in the samples of which evaluation was available.

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A Study on Space Charge Distribution of HDPE Mixed with EVA (HDPE/EVA혼합수지의 공간 전하 분포에 관한 연구)

  • Jung, Eui-Hwan;Heo, Jun;Yoon, Jae-Hun;Lim, Kee-Joe;Lee, Hyung-Kyu
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.11
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    • pp.2229-2235
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    • 2009
  • In this paper, each specimen blended at weight proportions of 80% HDPE to 20% EVA, 70% HDPE to 30% EVA, 60% HDPE to 40% EVA, and 50% HDPE to 50% EVA was manufactured respectively. The insulation performances of the proposed insulator were compared with conventional XLPE, main insulating material of CV cable on the basis of the investigation results of DC insulation performances. From the space charge density, electric field and potential profiles with raising DC voltage and time variation in HE82, distortion of electric field distribution was improved. As EVA mixed into the bulks acts as nucleation in crystallization process of HDPE, the size of spherulites became decreased and finally formed continuous network structure. Ultimately, it resulted from extinction of space charge in the interfacial region of spherulites.

Electrical characteristics of Au/3C-SiC/Si/Al Schottky, diode (Au/3C-SiC/Al 쇼터키 다이오드의 전기적 특성)

  • Shim, Jae-Cheol;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.65-65
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    • 2009
  • High temperature silicon carbide Schottky diode was fabricated with Au deposited on poly 3C-SiC thin film grown on p-type Si(100) using atmospheric pressure chemical vapor deposition. The charge transport mechanism of the diode was studied in the temperature range of 300 K to 550 K. The forward and reverse bias currents of the diode increase strongly with temperature and diode shows a non-ideal behavior due to the series resistance and the interface states associated with 3C-SiC. The charge transport mechanism is a temperature activated process, in which, the electrons passes over of the low barriers and in turn, diode has a large ideality factor. The charge transport mechanism of the diode was analyzed by a Gaussian distribution of the Schottky barrier heights due to the Schottky barrier inhomogeneities at the metal-semiconductor interface and the mean barrier height and zero-bias standard deviation values for the diode was found to be 1.82 eV and $s_0$=0.233 V, respectively. The interface state density of the diode was determined using conductance-frequency and it was of order of $9.18{\times}10^{10}eV^{-1}cm^{-2}$.

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Electrical Characteristics of Carbon Nanotube Embedded 4H-SiC MOS Capacitors (탄소나노튜브를 첨가한 4H-SiC MOS 캐패시터의 전기적 특성)

  • Lee, Taeseop;Koo, Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.9
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    • pp.547-550
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    • 2014
  • In this study, the electrical characteristics of the nickel (Ni)/carbon nanotube (CNT)/$SiO_2$ structures were investigated in order to analyze the mechanism of CNT in MOS device structures. We fabricated 4H-SiC MOS capacitors with or without CNTs. CNT was dispersed by isopropyl alcohol. The capacitance-voltage (C-V) and current-voltage (I-V) are characterized. Both devices were measured by Keithley 4200 SCS. The experimental flatband voltage ($V_{FB}$) shift was positive. Near-interface trap charge density ($N_{it}$) and negative oxide trap charge density ($N_{ox}$) value of CNT embedded MOS capacitors was less than that values of reference samples. Also, the leakage current of CNT embedded MOS capacitors is higher than reference samples. It has been found that its oxide quality is related to charge carriers and/or defect states in the interface of MOS capacitors.

An Experimental Study on the Oxidation Process of Silicon (실리콘 산화공정에 대한 실험적 고찰)

  • 최연익;김충기
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.16 no.1
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    • pp.26-32
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    • 1979
  • Dry oxidation and wet oxidation processes of silicon have been examined experimentally. The oxidation temperatures were 1.10$0^{\circ}C$, 1.15$0^{\circ}C$, and 1.200 $^{\circ}C$, and oxygen flow rate was changed from 0.2 liter/min to 2.8 liter/min. From the experimental measurements, oxidation temperaturel time and oxygen flow rate have been tabutated for oxide layers 0.1$\mu$ - 1.0$\mu$ in thickness. The quality of the grown oxide layer has been investigated In terms of the dielectric constant, breakdown voltage, fixed surface charge densify (Qss/q) and mobile charge density (Q /q). From these measurements, it is concluded that the quality of the oxide layer is sufficient to expect the normal operation of MOS transistors.

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Charge/discharge Properties of Flyash as a Anode for Lithium Polymer Battery (리튬 폴리머 전지용 Flyash 부극의 충방전 특성)

  • Song, Hee-Woong;Kim, Jong-Uk;Park, Gye-Choon;Gu, Hal-Bon
    • Proceedings of the KIEE Conference
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    • 1999.11d
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    • pp.968-970
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    • 1999
  • The trend of increasing of portable electric devices and demand for global environmental conservation have demands the development of high energy density rechargeable batteries. Lithium polymer battery has excellent theoretical energy density and energy conversion efficiency. Lithium polymer battery, included solid polymer electrolyte(SPE), can be viewed as a system suitable for wide applications from thin film batteries for microelectronics to electric vehicle batteries. The purpose of this paper is to research and development of flyash anode for lithium polymer battery. We investigated AC impedance response and charge/discharge characteristics of flyash/SPE/Li cells. The radius of semicircle associated with the interfacial resistance of flyash/SPE/Li cell increased very slowly during discharge process from 3.11V to 0.478V. And then the cell resistance was decreased at discharge process from 10% SOC to 0% SOC. Also, The radius of semicircle associated with the interfacial resistance of flyash/SPE/Li cell decreasing very slowly during charge process. And then the cell resistance was increased after 20th discharge precess. The discharge capacity based on flyash of 1st and 20th cycles was 276mAh/g and 143mAh/g.

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