• Bulletin of the Korean Chemical Society
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• v.30 no.1
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• pp.97-101
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• 2009

A new approach was applied to examine the charge generation and transport in organic photoconductive devices by Monte‐Carlo simulation utilizing multiple site interactions of carriers with all other charges within Coulomb radius. Stepwise generation frame was considered first by a charge separation process that was counted in two separate transactions, i.e., hopping against physical decay and dissociation against recombination. Thereafter, diffusion/ drifting process of free carriers was counted to follow. This method enables to examine readily the photocurrent generated alongside the charge generation efficiency. The field and temperature dependences of the efficiency and photocurrent were obtained comparable to Onsager’s and experimental data.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.5
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• pp.530-537
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• 2013

An explicit surface potential calculation method of gate-all-around MOSFET (GAAMOSFET) devices which takes into account both interface trap charge and varying doping levels is presented. The results of the method are extensively verified by numerical simulation. Results from the model are used to find qualitative and quantitative effect of interface trap charge on subthreshold slope (SS) of GAAMOSFET devices. Further, design constraints of GAAMOSFET devices with emphasis on the effect of interface trap charge on device SS performance are investigated.

• Journal of Power Electronics
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• v.16 no.6
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• pp.2067-2075
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• 2016

Cascaded H-bridge multilevel inverters are currently used because it enables the integration of various sources, such as batteries, ultracapacitors, photovoltaic array and fuel cells in a single system. Conventional modulation schemes for multilevel inverters have concentrated mainly on the generation of a low harmonic output voltage, which results in less effective utilization of connected sources. Less effective utilization leads to a difference in the charging/discharging of sources, causing unsteady voltages over a long period of operation and a reduction in the lifetime of the sources. Hence, a charge balance control scheme has to be incorporated along with the modulation scheme to overcome these issues. In this paper, a new approach for charge balancing in symmetric cascaded H-bridge multilevel inverter that enables almost 100% charge balancing of sources is presented. The proposed method achieves charge balancing without any additional stages or complex circuit or considerable computational requirement. The validity of the proposed method is verified through simulation and experiments.

• Journal of the Korea Society for Simulation
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• v.28 no.1
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• pp.11-21
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• 2019

Modeling and simulation(M&S) method are used to quantify the weapon effectiveness. The weapon effectiveness of artillery shells was also partially studied, but there was a lack of research on the effects of the choice of charge. Therefore, this paper presents an artillery shell's EFD(Expected Fractional Damage) calculation model based on the charge and identifies differences in the weapon effectiveness of 3D building targets according to the selection of the charge. First, the input data of the calculation model was collected and a required number of shoots was calculated to achieve the desired effects using the proposed model. Finally, a paired sample t-test was conducted to verify the proposed model.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.138-142
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• 2019

As the NAND flash memory goes to 3D vertical Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) structure, the lateral charge migration can be critical in the reliability performance. Even more, with miniaturization of flash memory cell device, just a little movement of trapped charge can cause reliability problems. In this paper, we propose a method of predicting the trapped charge profile in the retention mode. Charge diffusivity in the charge trapping layer (Si₃N₄) was extracted experimentally, and the effect on the trapped charge profile was demonstrated by the simulation and experiment.

• Proceedings of the KIEE Conference
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• 1997.07e
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• pp.1788-1790
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• 1997

It is necessary to know the accurate field distribution around the high power apparatus, in designing it. To calculate the field around electrodes, we use the Charge Simulation Method(CSM) among several numerical methods and develop the new "Field Analysis System", by which we can draw the shape of electrodes, save the drawing in ascii code and apply CSM on the data. In the Field Analysis System, we try several rules for arrangement of simulation charge on CSM and consider their accuracy.

• Journal of Electrical Engineering and Technology
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• v.7 no.6
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• pp.824-833
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• 2012

In this paper, a coordinated state-of-charge (SOC) control strategy for the energy storage system (ESS) operating under microgrid islanded mode to stabilize the frequency and voltage was proposed. The proposed SOC control loop is made up of PI controller, which uses a SOC state of the energy storage system as an input and an auxiliary reference value of secondary control as an output. The SOC controller changes the auxiliary reference value of secondary control to charge or discharge the ESS. To verify the proposed control strategy, PSCAD/EMTDC simulation study was performed. The simulation results show that the SOC of the ESS can be regulated at the desired operating range without degrading the stabilizing control performance by proposed coordinated SOC control method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.822-827
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• 2000

The Si-SiO$_2$interface trap and nitride bulk trap distribution of SONOSFET(polysilicon-oxide-nitride-oxide-semiconductor field effect transistor) NVSM (nonvolatile semiconductor memory) cell is investigated by single junction charge pumping method. The device was fabricated by 0.35㎛ standard logic fabrication process including the ONO stack dielectrics. The thickness of ONO dielectricis are 24$\AA$ for tunnel oxide, 74 $\AA$ for nitride and 25 $\AA$ for blocking oxide, respectively. By the use of single junction charge pumping method, the lateral profiles of both interface and memory traps can be calculated directly from experimental charge pumping results without complex numerical simulation. The interface traps were almost uniformly distributed over the whole channel region and its maximum value was 7.97$\times$10$\^$10/㎠. The memory traps were uniformly distributed in the nitride layer and its maximum value was 1.04$\times$10$\^$19/㎤. The degradation characteristics of SONOSFET with write/erase cycling also were investigated.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.211-218
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• 1999

This paper describes the application of a coupled finite element-boundary element method (FE-BEM) to obtain the steady-state response of a piezoelectric transducer. The particular structure considered is a PZT4 disc-typed projector. The projector is three-dimensionally simulated to transduce applied electric charge on axial surfaces of the piezoelectric disc to acoustic pressure in air or in water. The directivity pattern of the acoustic field formed from the projected sound pressure is also simulated. And the displacement of the disc caused by the externally applied electric charge is shown in temporal motion. The coupled FE-BE method is described in detail.

• Proceedings of the KIPE Conference
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• 2008.10a
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• pp.13-15
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• 2008

Charging or discharging secondary batteries such as a lithium-ion battery is essential in the stage of production and takes long time over two hours. And the charge/discharge system is operated with high switching frequency over several tens kHz. Therefore, to simulate such a system in the conventional way takes very long time and huge files are produced. Finally, the simulation would be unable with general PC class. In this paper, the lithium-ion battery charge/discharge system is analyzed by using state space averaging method. As a result, the simulation time is reduced dramatically and the charge/- discharge characteristics of the lithium-ion battery can be observed.