• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2013.05a
• /
• pp.768-771
• /
• 2013

This paper analyzed the change of subthreshold current for channel doping concentration of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for channel doping concentration, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. As a result, we know the subthreshold current was influenced on parameters of Gaussian function and channel doping concentration for DGMOSFET.

• Proceedings of the Korea Water Resources Association Conference
• /
• 2018.05a
• /
• pp.149-149
• /
• 2018

Prediction on initial motion of sediment is crucial to evaluate sediment transport and channel stability. The condition of incipient movement of sediment is characterized by bed shear stress, which is generated from force of moving water against the bed of the channel, and by critical shear stress, which depends on force resisting motion of sediment due to the submerged weight of the grains. When the bed shear stress exceeds the critical shear stress, sediment particles begin rolling and sliding at isolated and random locations. In Mountain River, debris flow frequently occurs due to heavy rainfall and can lead some natural stones from mountain slope into the bed river. This phenomenon could add additional forces to sediment transport system in the bed of river and also affect or change direction and magnitude of sediment movement. In this paper, evaluations on incipient motion of uniform coarse gravel under falling spheres impacts using small scale flume channel were conducted. The drag force of falling spheres due to water flow and length movement of falling spheres were investigated. The experiments were carried out in flume channel made by glass wall and steel floor with 12 m long, 0.6 m wide, and 0.6 m deep. The bed slopes were selected with the range from 0.7% to 1.5%. The thickness of granular layer was at least 3 times of diameter of granular particle to meet grain placement condition. The sphere diameters were chosen to be 4cm, 6 cm, 8 cm, 10 cm. The spheres were fallen in to the bed channel for critical condition and under critical condition of motion particle. Based on the experimental results, the Shields curve of particles Reynold number and dimensionless critical shear stress were plotted. The relationship between with drag force and the length movement of spheres were plotted. The pathways of the bed material Under the impact of spheres falling were analyzed.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.20 no.3
• /
• pp.571-576
• /
• 2016

Asymmetric double gate(DG) MOSFET has the different top and bottom gate oxides thicknesses. It is analyzed the deviation of subthreshold swing(SS) and conduction path for the ratio of top and bottom gate oxide thickness of asymmetric DGMOSFET. SS varied along with conduction path, and conduction path varied with top and bottom gate oxide thickness. The asymmetric DGMOSFET became valuable device to reduce the short channel effects like degradation of SS. SSs were obtained from analytical potential distribution by Poisson's equation, and it was analyzed how the ratio of top and bottom oxide thickness influenced on conduction path and SS. SSs and conduction path were greatly influenced by the ratio of top and bottom gate oxide thickness. Bottom gate voltage cause significant influence on SS, and SS are changed with a range of 200 mV/dec for $0<t_{ox2}/t_{ox1}<5$ under bottom voltage of 0.7 V.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2008.05a
• /
• pp.727-729
• /
• 2008

Organic field-effort transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.51-51
• /
• 2009

In this paper, we proposed GaN trench Static Induction Transistor(SIT). Because The compound semiconductor had superior thermal characteristics, GaN and SiC power devices is next generation power semiconductor devices. We carried out modeling of GaN SIT with 2-D device and process simulator. As a result of modeling, we obtained 340V breakdown voltage. The channel thickness was 3um and the channel doping concentration is 1e17cm-3. And we carried out thermal characteristics, too.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.279-280
• /
• 2009

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.303-304
• /
• 2009

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine. ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

• Journal of Sensor Science and Technology
• /
• v.26 no.2
• /
• pp.79-84
• /
• 2017

The drain current of the SB MOSFET was analytically modeled by an equation composed of thermionic emission and tunneling with consideration of the image force lowering. The depletion region electron concentration was used to model the channel electron concentration for the tunneling current. The Schottky barrier width is dependent on the channel electron concentration. The drain current is changed by the gate oxide thickness and Schottky barrier height, but it is hardly changed by the doping concentration. For a GaN SB MOSFET with ITO source and drain electrodes, the calculated threshold voltage was 3.5 V which was similar to the measured value of 3.75 V and the calculated drain current was 1.2 times higher than the measured.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2003.05a
• /
• pp.96-98
• /
• 2003

The evolution of texture and microstructure during continuous confined strip shearing (CCSS) in aluminum 3003 alloy sheets was investigated. The tools of CCSS based on the equal channel angular pressing (ECAP) were designed to provide a constant shear deformation of the order of 0.5 per pass while preserving the original sheet shape. FEM results indicated that the shear formation is not homogeneous throughout the sample thickness, in particular at the surface layers. A randomization of textures took place during the CCSS deformation. Observations by TEM and EBSD revealed the formation of sub-micrometer sized grains after CCSS.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.12
• /
• pp.1018-1022
• /
• 2009

In this paper, we proposed GaN trench Static Induction Transistor(SIT). Because The compound semiconductor had superior thermal characteristics, GaN and SiC power devices is next generation power semiconductor devices. We carried out modeling of GaN SIT with 2-D device and process simulator. As a result of modeling, we obtained 340 V breakdown voltage. The channel thickness was 3 urn and the channel doping concentration is $1e17\;cm^{-3}$. And we carried out thermal characteristics, too.