• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2008년도 추계종합학술대회 B
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• pp.619-621
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.561-564
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• 2003

본 연구는 고온 초전도 자속 흐름 트랜지스터의 채널 식각 두께에 따른 임계 특성의 자동 측정을 위해 나노옴/마이크로 볼트 미터 와 전원공급기 등 측정에 필요한 장비들을 GPIB 인터페이스 보드를 통해 PC와 연결하여 측정 장치를 구축후 직접 제작한 측정 프로그램을 통해 자동으로 시편에 전류, 전압을 가한후 임계 특성값을 효율적인 방법으로 측정하고 측정 결과값들을 시간순서 및 측정 대상에 따라 데이터 베이스화 하는 방법에 대하여 소개한다. 부수적으로 임계 특성의 정확한 측정을 위해 실험에 변수가 되는 요소들을 찾아내고 실험 데이터값들로부터 오차를 발견, 오차의 원인이 되는 식각 방법 및 실험 환경등의 부가적인 요소들을 고려하여 개선된 측정 장치를 구축하는데 경제적, 시간적인 효율성 측면에 대해 언급했다.

• Design & Manufacturing
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• 제2권1호
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• pp.21-26
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• 2008

In this research, jar die of cosmetic products which is difficult to produce variously was developed and can be obtain the productivity improvement by flexibility with two system which can control the die temperature. Flow analysis of jar was performed to find out the curvature radius of parts. In order to reduce thickness of jar, cycle time, deformation, uniform curvature of internal jar was maintained by rapid cooling. In external of dies, cooling channel, injection molding condition, die temperature control system were researched to make dies low temperature.

• 소성∙가공
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• 제18권6호
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• pp.448-452
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• 2009

Superplastic deformation behavior and texture evolution after equal channel angular pressing (ECAP) of Zn-0.3Wt%Al alloy were investigated in this study. ECAP was conducted at temperatures from $60^{\circ}C$ to $160^{\circ}C$ on the plate type specimens of 5 mm thickness and 20 mm width. The specimens obtained by ECAP showed typical texture with basal poles tilted away from the ND toward ED, which is called shear texture. Tensile tests were carried out at $100^{\circ}C$ for ECAPed specimens under the strain rate of 0.0002/s. After ECAP of the Zn-0.3Wt%Al alloy, elongation was dramatically increased up to 500% at $100^{\circ}C$. The effect of ECAP on the anisotropy in the superplastic deformation behavior was negligible.

• E2M - 전기 전자와 첨단 소재
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• 제10권8호
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• pp.783-793
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• 1997

A VLSI implementation of a self-learning neural network integrated circuits using a linearity synapse transistor is investigated. The thickness dependence of oxide current density stress current transient current and channel current has been measured in oxides with thicknesses between 41 and 112 $\AA$, which have the channel width $\times$ length 10 $\times$1${\mu}{\textrm}{m}$, 10 $\times$ 0.3${\mu}{\textrm}{m}$ respectively. The transient current will affect data retention in synapse transistors and the stress current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor has represented the neural states and the manipulation which gaves unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the drain source current.

• 대한전자공학회논문지
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• 제27권7호
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• pp.1033-1041
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• 1990

In this paper, under pinch-off conditions, the gate-drain breakdown voltage characteristics of GaAs Power MESFET's as a function of device parameters such as channel thickness, doping concentration, gate length etc. are analyzed. Using the Green's function, the gate ionic charge induced by the depleted channel ionic charge is calculated. The impact ionization integral by avalanche multiplication between gate and drain is used to investigate breakdown phenomena. Especially, the localized excess surface charge effect as well as the uniform surface charge effect on breakdown voltage is considered.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.504-505
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• 2008

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.506-507
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel device was width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 논문집
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• pp.12-13
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Transactions on Electrical and Electronic Materials
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• 제8권4호
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• pp.170-173
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated the organic field-effect transistor based a copper phthalocyanine (CuPc) as an active layer on the silicon substrate. The CuPc FET device was made a topcontact type and the substrate temperature was room temperature and $150^{\circ}C$. The CuPc thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in CuPc FET and we calculated the effective mobility with each device. Also, we observed the AFM images with different substrate temperature.