• Journal of Electrical Engineering and information Science
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• v.3 no.2
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• pp.261-266
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• 1998

This paper describes the fabrication and characterization of dual-polysilicon gated surface channel 0.1$\mu\textrm{m}$ CMOSFETs using BF2 and arsenic as channel dopants. We have used and LDD structure and 40${\AA}$ gate oxide as an insulator. To suppress short channel effects down to 0.1$\mu\textrm{m}$ channel length, shallow source/drain extensions implemented by low energy implantation and SSR(Super Steep Retrograde) channel structure were used. The threshold voltages of fabricated CMOSFETs are 0.6V. The maximum transconductance of nMOSFET is 315${\mu}$S/$\mu\textrm{m}$, and that of pMOSFET is 156 ${\mu}$S/$\mu\textrm{m}$. The drain saturation current of 418 ${\mu}$A/$\mu\textrm{m}$, 187${\mu}$A/$\mu\textrm{m}$ are obtained. Subthreshold swing is 85mV/dec and 88mV/dec, respectively. DIBL(Drain Induced Barrier Lowering) is below 100mV. In the device with 2000${\AA}$ thick gate polysilicon, depletion in polysilicon near the gate oxide results in an increase of equivalent gate oxide thickness and degradation of device characteristics. The gate delay time is measured to be 336psec at operation voltage of 2V.

• Journal of the Korean Society of Propulsion Engineers
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• v.9 no.4
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• pp.39-47
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• 2005

The structural analysis and water pressure tests are performed for liquid rocket thrust chamber regenerative cooling channel specimens at room temperature condition. Material properties of copper alloy to be used in the elastic-plastic structural analysis are obtained by uniaxial tension test at room temperature. The plate-type cooling channel specimens are manufactured and performed water pressure test to verify the analysis results. The results of elastic-plastic structural analysis and water pressure test show resonable agreements though with minor differences and it is revealed that structural stability of regenerative cooling channel is highly affected by the manufacturing tolerances due to very thin cross-sectional thickness of the cooling channel.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.2
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• pp.8-13
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• 1999

In this paper, an analytical threshold voltage model is proposed by replacing the conventional GCA(Gradual Channel Approximation) with the assumption that a normal depletion layer width in the intrinsic region will vary quasi-linearly according to the channel direction. Derived threshold voltage expression is written as a function of the effective channel length, drain voltage, substrate bias voltage, substrate doping concentration, and the oxide thickness. Calculated results show almost similar trends with BSIM3v3's results in a satisfactory accuracy.

• Journal of the Korean institute of surface engineering
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• v.40 no.3
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• pp.149-158
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• 2007

Of all components of MCFC(molten carbonate fuel cell), corrosion of separator is one of the most decisive factor for commercializing of MCFC. In order to provide better understanding of corrosion behavior and morphology for gas channel of separator plate, post-analysis after cell operation for 1200 hours at $650^{\circ}C$ was performed by optical microscope, SEM and EPMA. Intergranular corrosion was observed on gas channel of separator plate. Corrosion product layer was identified as Fe-oxide, Cr-oxide and Ni-oxide by EPMA, and oxide thickness was measured with a $60{\mu}m-150{\mu}m$. Also, gas channel of separator was damaged by severe intergrannular attack with post analysis in consistent with immersion test. Moreover, pitting on the channel plate was observed with a depth of $18{\sim}24{\mu}m$. The results of immersion method are well agreement with post analysis measurements.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• Transactions of the Korean Society of Mechanical Engineers
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• v.10 no.1
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• pp.86-95
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• 1986

A study on film water flow on steep open channel has been seldom found up to date. Therefore, this paper dealed with the depth variation of film thickness of water (city supply normal water) flowing on steep open channel. For this purpose, Experimental apparatus (made of a normal glass with 160cm of length and 15cm of width) was made and the depths of the water flowing on the channel were measured experimentally, changing the channel slope angle from 30 to 80 degree (5 steps) and the flow rate from 0.25 to 10CPM (11 steps). The results obtained, some characteristics of the film flow on the channel are as follows. (1) When thin film water flowed on steep open channel, the depths of flow tended to increase after decreasing and was kept nearly constant in its downstream in case of laminar and transitional flow region. The turining point of the depths of flow from decrease to increase tended to move downward with the increase of Reynolds number. In turbulent flow region, the depths of flow showed reapid decrease in its upper stream, gradual decrease in its midstream and were kept nearly constant in its downstream. (2) While the differences between the depths of flow along the channel slope got small in its upper stream and got large in its downstream in case of laminar flow region, they got very large in its upper stream and were kept nearly constant in its downstream in case of transitional and turbulent flow region. And the move flow rate increases, the more the differences between the depths of flow along the channel slope got large in its upper stream.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.86-92
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• 1999

A SiGe p-channel MESFET using $\delta$-doped layers is designed and the considerabel enhancement of the current driving capability of the device is observed from the result of simulation. The channel consists of double $\delta$-doped layers separated by a low-doped spacer which consists of Si and SiGe. A quantum well is formed in the valence band of the Si/SiGe heterojunction and much more holes are accumulated in the SiGe spacer than those in the Si spacer. The saturation current is enhanced by the contribution of the holes in the spacer. Among the design parameters that affect the performance of the device, the thickness of the SiGe layer and the Ge composition are studied. The thickness of 0~300$\AA$ and the Ge composition of 0~30% are investigated, and saturation current is observed to be increased by 45% compared with a double $\delta$-doped Si p-channel MESFET.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.24 no.12
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• pp.1635-1643
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• 2000

The present work investigates a heat transfer phenomenon at the interface between a porous medium and an impermeable wall. In an effort to appropriately describe the heat transfer phenomenon at the interface, the heat transfer at the interface between the microchannel heat sink, which is an ideally organized porous medium, and the finite-thickness substrate is examined. From the examination, it is clarified that the he heat flux distribution at the interface is not uniform for the impermeable wall with finite thickness. On the other hand, the first approach, based on the energy balance for the representative elementary volume in the porous medium, is physically reason able. When the first approach is applied to the thermal boundary condition, and additional boundary condition based on the local thermal equilibrium assumption at the interface is used. This additional boundary condition is applicable except for the very th in impermeable wall. Hence, for practical situations, the first approach in combination with the local thermal equilibrium assumption at the interface is suggested as an appropriate thermal boundary condition. In order to confirm our suggestion, convective flows both in a microchannel heat sink and in a sintered porous channel subject to a constant heat flux condition are analyzed. The analytically obtained thermal resistance of the microchannel heat sink and the numerically obtained overall Nusselt number for the sintered porous channel are shown to be in close agreement with available experimental results when our suggestion for the thermal boundary conditions is applied.

• Korean Journal of Optics and Photonics
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• v.13 no.6
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• pp.461-466
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• 2002

Fiber-optic comb filters using a side-polished fiber coupler are proposed as multi-channel isolation filters on wavelength division multiplexing systems. We have demonstrated that the coupling efficiency between two waveguides is improved by the intermediate coupling layer in spite of the decrease of the optical power transfer between two waveguides due to the high-order modes of the overlay waveguide coupled with the side-polished single-mode fiber. When LiNbO$_3$with a 200-${\mu}{\textrm}{m}$-thickness was applied as a planar-overlay-waveguide, the comb filtering characteristics with a 4 nm-channel-spacing were achieved and the maximum power coupling occurred at the 1-${\mu}{\textrm}{m}$-thickness and the refractive index in range 1.52 to 1.53 of an intermediate coupling layer. If the intermediate coupling layer is optimized, an extinction ratio with more than 20 dB can be obtained. These experimental results are in good agreement with the BPM simulation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.05a
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• pp.741-744
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• 2014

This paper has analyzed threshold voltage roll-off for bottom gate voltages of asymmetric double gate(DG) MOSFET. Since the asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates, the bottom gate voltage influences on threshold voltage. It is, therefore, investigated how the threshold voltage roll-off known as short channel effects is reduced with bottom gate voltage. In the pursuit of this purpose, off-current model is presented in the subthreshold region, and the threshold voltage roll-off is observed for channel length and thickness with a parameter of bottom gate voltage as threshold voltage is defined by top gate voltage that off-currnt is $10^{-7}A/{\mu}m$ per channel width. As a result to observe the threshold voltage roll-off for bottom gate voltage using this model, we know the bottom gate voltage greatly influences on threshold voltage roll-off voltages, especially in the region of short channel length and thickness.