• Journal of the Semiconductor & Display Technology
• /
• v.13 no.1
• /
• pp.43-49
• /
• 2014

Zinc-tin oxides (ZTO) thin film transistors have been fabricated at different process pressure via re sputtering technique. TFT properties were improved by depositing channel layers at lower pressure. From the analysis of TFTs comprised of multi layer channel, deposited consecutively at different sputtering pressure, it was suggested that the electrical characteristics of TFTs were mainly affected by interfacial layer due to their high conductance, however, the stability under the NBIS condition was influenced by whole bulk layer due to low concentration of positive charges, which might be generated by the oxygen vacancy transition, from Vo0 to $Vo^{2+}$. Those improvements were attributed to increasing sputtered target atoms and decreasing harmful effects of oxygen molecules by adopting low sputtering pressure condition.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.222-222
• /
• 2010

Transparent semiconductor oxide thin films have been attracting considerable attention as potential channel layers in thin film transistors (TFTs) owing to their several advantageous electrical and optical characteristics such as high mobility, high stability, and transparency. TFTs with ZnO or similar metal oxide semiconductor thin films as the active layer have already been developed for use in active matrix organic light emitting diode (AMOLED). Of late, there have been several reports on TFTs fabricated with InZnO, AlZnSnO, InGaZnO, or other metal oxide semiconductor thin films as the active channel layer. These newly developed TFTs were expected to have better electrical characteristics than ZnO TFTs. In fact, results of these investigations have shown that TFTs with the new multi-component material have excellent electrical properties. In this work, we present TFTs with inverted coplanar geometry and with a novel HfInZnO active layer co-sputtered at room temperature. These TFTs are meant for use in low voltage, battery-operated mobile and flexible devices. Overall, the TFTs showed good performance: the low sub-threshold swing was low and the $I_{on/off}$ ratio was high.

• Proceedings of the Korea Information Processing Society Conference
• /
• 2007.05a
• /
• pp.989-992
• /
• 2007

In this paper we introduce a new paradigm of physical layer security for wireless network. Existing security protocols like internet's transport layer security protocol has some security flaws that skilled hackers could exploit. Motivated from this point we introduce a new security protocol that works in physical layer which is much less vulnerable to hackers than any other higher layers. In our proposal, we incorporate the proposed security protocol within channel coding as channel coding is an essential part of wireless communication. We utilize the flexibility to choose a generator matrix (or generator polynomial) of a particular code that selects the code words as a core of our protocol. Each pair of wireless node will select a unique generator using their security key before they started to communicate with each other.

• Proceedings of the KIEE Conference
• /
• 2005.10a
• /
• pp.165-168
• /
• 2005

In this paper, we examined channel charge which occurs in electron accumulation after electron velocity saturation. Generally, short gate GaAs MESFET show, saturated electron velocity leading to current satulation. When electron velocity is saturated, deletion layer is still open channel and it plays a key role in deciding saturation current mode we proposed channel charge model in channel after electron velocity saturation.

• Korea-Australia Rheology Journal
• /
• v.15 no.2
• /
• pp.83-90
• /
• 2003

In cases of the microfluidic channel, the electrokinetic influence on the transport behavior can be found. The externally applied body force originated from the electrostatic interaction between the nonlinear Poisson-Boltzmann field and the flow-induced electrical field is applied in the equation of motion. The electrostatic potential profile is computed a priori by applying the finite difference scheme, and an analytical solution to the Navier-Stokes equation of motion for slit-like microchannel is obtained via the Green's function. An explicit analytical expression for the induced electrokinetic potential is derived as functions of relevant physicochemical parameters. The effects of the electric double layer, the zeta potential of the solid surface, and the charge condition of the channel wall on the velocity profile as well as the electroviscous behavior are examined. With increases in either electric double layer or zeta potential, the average fluid velocity in the channel of same charge is entirely reduced, whereas the electroviscous effect becomes stronger. We observed an opposite behavior in the channel of opposite charge, where the attractive electrostatic interactions are presented.

• Journal of Biomedical Engineering Research
• /
• v.15 no.3
• /
• pp.317-324
• /
• 1994

This paper proposed a new method in the implementation of ISDN (integrated services digital network) LAPD (link access procedure on the D-channel) and LAPB (link access procedure on the B-channel) protocols. The proposed method in this paper implement ISDW LAPD protocol through multi-tasking operating system and adopt a kernel part that is changed operating system to target board. The features of implemented system are (1) the para.llel processing of the events generated at each layer, as follows (2) the supporting necessary timers for the implementation of ISDW LAPD protocol from the kernel part by using software, (3) the recommanded SAP (Service Access Point) from CCITT was composed by using port function in the operating system. With the proposed method, the protocols of ISDH layerl, layer2 and layer3 (call control) were implemented by using the kernel part and related tests were carried out by connecting the ISDH terminal simulator to ISDN S-interface system using the ISDN LAPD protocol The results showed that ISDW S-interface terminals could be discriminated by TEI (Terminal Equipment Identifier) assignment in layer 2 (LAPD) and the message transmission of layer 3 was verified by establishing the multi-frame transmission and then through the path established by the LAPD protocol, a user data was tranfered and received on B-channel with LAPB protocol Thererfore, as new efficient ISDN S-interface environment was implemented in the thesis, it was verified that the implemented system can be utilized by connecting ISDW in the future to transfer a medical image data.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.215.2-215.2
• /
• 2015

We fabricated dual active layer (DAL) thin film transistors (TFTs) with indium tin zinc oxide (ITZO) and indium gallium zinc oxide (IGZO) thin film layers using solution process. The ITZO and IGZO layer were used as the front and back channel, respectively. In order to investigate the bias stress stability of ITZO SAL (single active layer) and ITZO/IGZO DAL TFT, a gate bias stress of 10 V was applied for 1500 s under the dark condition. The SAL TFT composed of ITZO layer shows a poor positive bias stability of ${\delta}VTH$ of 13.7 V, whereas ${\delta}VTH$ of ITZO/IGZO DAL TFT was very small as 2.6 V. In order to find out the evidence of improved bias stress stability, we calculated the total trap density NT near the channel/gate insulator interface. The calculated NT of DAL and SAL TFT were $4.59{\times}10^{11}$ and $2.03{\times}10^{11}cm^{-2}$, respectively. The reason for improved bias stress stability is due to the reduction of defect sites such as pin-hole and pores in the active layer.

• Journal of Magnetics
• /
• v.10 no.2
• /
• pp.66-70
• /
• 2005

The junction properties between the ferromagnet (FM) and two-dimensional electron gas (2DEG) system are crucial to develop spin electronic devices. Two types of 2DEG layer, InAs and GaAs channel heterostructures, are fabricated to compare the junction properties of the two systems. InAs-based 2DEG layer with low trans-mission barrier contacts FM and shows ohmic behavior. GaAs-based 2DEG layer with $Al_2O_3$ tunneling layer is also prepared. During heat treatment at the furnace, arsenic gas was evaporated and top AlAs layer was converted to aluminum oxide layer. This new method of forming spin injection barrier on 2DEG system is very efficient to obtain tunneling behavior. In the potentiometric measurement, spin-orbit coupling of 2DEG layer is observed in the interface between FM and InAs channel 2DEG layers, which proves the efficient junction property of spin injection barrier.

• Journal of the Semiconductor & Display Technology
• /
• v.12 no.3
• /
• pp.23-27
• /
• 2013

This paper is for enhancing the breakdown voltage of MHEMTs with an InP-etchstop layer. Gate-recess structures has been simulated and analyzed for the breakdown of the devices with the InP-etchstop layer. The fully removed recess structure in the drain side of MHEMT shows that the breakdown voltage enhances from 2V to almost 4V and that the saturation current at gate voltage of 0V is reduced from 90mA to 60mA at drain voltage of 2V. This is because the electron-captured negatively fixed charges at the drain-side interface between the InAlAs barrier layer and the $Si_3N_4$ passivation layer deplete the InGaAs channel layer more and thus decreases the electron current passing the channel layer. In the paper, the fully-recessed asymmetric gate-recess structure at the drain side shows the on-breakdown voltage enhancement from 2V to 4V in the MHEMTs.

• Journal of Communications and Networks
• /
• v.18 no.3
• /
• pp.411-419
• /
• 2016

This article investigates the problem of distributed channel selection in opportunistic spectrum access networks from a perspective of interference minimization. The traditional physical (PHY)-layer interference model is for information theoretic analysis. When practical multiple access mechanisms are considered, the recently developed binary medium access control (MAC)-layer interference model in the previous work is more useful, in which the experienced interference of a user is defined as the number of competing users. However, the binary model is not accurate in mathematics analysis with poor achievable performance. Therefore, we propose a real-valued one called stochastic MAC-layer interference model, where the utility of a player is defined as a function of the aggregate weight of the stochastic interference of competing neighbors. Then, the distributed channel selection problem in the stochastic MAC-layer interference model is formulated as a weighted stochastic MAC-layer interference minimization game and we proved that the game is an exact potential game which exists one pure strategy Nash equilibrium point at least. By using the proposed stochastic learning-automata based uncoupled algorithm with heterogeneous learning parameter (SLA-H), we can achieve suboptimal convergence averagely and this result can be verified in the simulation. Moreover, the simulated results also prove that the proposed stochastic model can achieve higher throughput performance and faster convergence behavior than the binary one.