• Journal of Advanced Navigation Technology
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• v.14 no.5
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• pp.684-690
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• 2010

Recently, the NG(Next Generation) system is studied for supporting convergence of various services and multi mode of single terminal. And a demand of user for taking the various services is getting increased, for supporting these services, many systems being able to transmit a large message have been appeared. In the NG system, it has to be supporting the CDMA and WCDMA besides the tele communication systems using OFDM method with single terminal An intergrated system can be improved with adopting of SoC technique. For adopting SoC technique on the intergrated terminal, we have to solve the non linear problem of HPA(High Power Amplifier). Nonlinear characteristic of HPA distorts both amplitude and phase of transmit signal, this distortion cause deep adjacent channel interference. We adopt a polynomial pre-distortion technique for this problem. In this paper, a noble modem design for NG mobile communication service and a method using polynomial pre-distorter with PAPR technique for counterbalancing nonlinear characteristic of the HPA are proposed.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.7
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• pp.122-130
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• 2013

This work proposes a 12b 100MS/s 45nm CMOS four-step pipeline ADC for high-speed digital communication systems requiring high resolution, low power, and small size. The input SHA employs a gate-bootstrapping circuit to sample wide-band input signals with an accuracy of 12 bits or more. The input SHA and MDACs adopt two-stage op-amps with a gain-boosting technique to achieve the required DC gain and high signal swing range. In addition, cascode and Miller frequency-compensation techniques are selectively used for wide bandwidth and stable signal settling. The cascode current mirror minimizes current mismatch by channel length modulation and supply variation. The finger width of current mirrors and amplifiers is laid out in the same size to reduce device mismatch. The proposed supply- and temperature-insensitive current and voltage references are implemented on chip with optional off-chip reference voltages for various system applications. The prototype ADC in a 45nm CMOS demonstrates the measured DNL and INL within 0.88LSB and 1.46LSB, respectively. The ADC shows a maximum SNDR of 61.0dB and a maximum SFDR of 74.9dB at 100MS/s, respectively. The ADC with an active die area of $0.43mm^2$ consumes 29.8mW at 100MS/s and a 1.1V supply.