• 제목/요약/키워드: Chalcopyrite structure

검색결과 70건 처리시간 0.028초

EBE법으로 제작한 $CuInS_{2}$ 박막 특성에 관한 연구 (On the Study of Properties and Preparation of the $CuInS_{2}$ thin films by EBE method)

  • 박계춘;김성구;류용택
    • 센서학회지
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    • 제3권1호
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    • pp.83-87
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    • 1994
  • EBE법으로 S,In과 Cu를 순차적으로 증착하여 S/In/Cu 적층막을 제작하고, 진공 및 별도 S(Sulphur)공급하면서 열처리하여 다결정 $CuInS_{2}$ 박막을 제작하였다. 진공중에서 열처리한 박막은 chalcopyrite 구조를 갖는 n형 $CuInS_{2}$ 이었고 이때 최저 저항율은 $142{\Omega}Cm$이었다. 또한 별도 S 공급하면서 열처리한 박막은 p형으로 chalcopyrite 구조를 갖고 성장되었으며 최저 저항율은 $137{\Omega}Cm$ 이었다.

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스프레이 분무법을 이용한 CIGS 태양전지 박막의 합성 (CIGS Thin Film Fabrication Using Spray Deposition Technique)

  • 조정민;배은진;서정대;송기봉
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.250-250
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    • 2010
  • We have prepared CIGS thin film absorber layers with simple solution spray deposition technique and thin film were synthesized with different atomic ratio. CIGS thin films were synthesized using non-vacuum solution deposition method on pre-heated sodalime glass substrates and Mo-coated soadlime glass substrate. In precursor solution were Cu : In : Ga: S ratio 4 : 3 : 2 : 8 and the crystal type of sprayed thin film were CIGS chalcopyrite structures. This structure was identified as typical chalcopyrite tetragonal structure with XRD analysis. This result showed that CIGS solution deposition technique has potential for the one step synthesis and low cost fabrication process for CIS or CIGS thin film absorber layer.

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Structural Stability and the Electronic Structure of InP/GaP Superlattices

  • Park, Cheol-Hong;Chang, Kee-Joo
    • ETRI Journal
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    • 제13권4호
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    • pp.25-34
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    • 1991
  • The stability and the electronic structure of $In_0.5$.$Ga_0.5$P-based superlattices are examined through self-consistent ab initio pseudopotential calculations. A chalcopyrite-like structure is found to be the lowest energy state over (001) and (111) monolayer superlattices (MLS). Our calculations indicate that all the ordered structures in bulk form are unstable against phase segregation into binary constituents at T = 0 while for epitaxial growth, the chalcopyrite phase is stabilized. The fundamental band gaps of the ordered structures are found to be direct and smaller than that of disordered alloys. The lowering of the band gap is explainable by band folding and pushing effects. We find the reduction of the band gap to be largest for the (111) MLS.

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4원 합금 AlGaAs2:Mn의 강자성 (Ferromagnetism of Chalcopyrite AlGaAs2:Mn Quaternary Alloys)

  • 강병섭
    • 한국재료학회지
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    • 제30권12호
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    • pp.666-671
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    • 2020
  • The electronic structure and magnetic properties of chalcopyrite (CH) AlGaAs2 with dopant Mn at 3.125 and 6.25 % concentrations are investigated using first-principles calculations. The CH AlGaAs2 alloy is a p-type semiconductor with a small band-gap. The AlGaAs2:Mn shows that the ferromagnetic (FM) state is the most energetically favorable one. The Mn-doped AlGaAs2 exhibits FM and strong half-metallic ground states.The spin polarized Al(Ga,Mn)As2 state (Al-rich system) is more stable than the (Al,Mn)GaAs2 state (Ga-rich system), which has a magnetic moment of 3.82mB/Mn. The interaction between Mn-3d and As-4p states at the Fermi level dominates the other states.The states at the Fermi level are mainlyAs-4p electrons, which mediate strong interaction between the Mn-3d and As-4p states. It is noticeable that the FM ordering of dopant Mn with high magnetic moment originates from the As(4p)-Mn(3d)-As(4p) hybridization, which is attributed to the partially unfilled As-4pbands. The high FM moment of Mn is due to the double-exchange mechanism mediated by valence-band holes.

CIGS 분말을 이용한 박막제조 및 특성평가 (Fabrication and Characterizations of CIGS Powder Evaporated Thin Films)

  • 서정대;송기봉;함창우;안세진;윤재호;윤경훈
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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    • pp.169-171
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    • 2009
  • We have fabricated CIGS thin film absorber layers by the evaporation of CIGS powders which were synthesized by solutions with different atomic ratio compositions. We found that the polycrystalline structural properties and optical properties of the deposited CIGS thin films were strongly dependent on the CIGS powder synthesis solution compositions. For three different solution compositions, Cu:In:Ga:Se= 4:3:1:8, 8:3:1:8, 12:3:1,8, the deposited thin film crystalline structures were varied form InSe crystalline structure to CIGS chalcopyrite structures. Our results showed that CIGS powder evaporation is potential for the one step fabrication process for CIGS thin film absorber layer deposition.

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HgGa2S4 단결정의 광학적 특성연구 (A Study on the Optical Properties of HgGa2S4 Single Crystal)

  • 이관교;이상열;강종욱;이봉주;김형곤;현승철;방태환
    • 한국전기전자재료학회논문지
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    • 제16권11호
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    • pp.969-974
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    • 2003
  • HgGa$_2$S$_4$ single crystals were grown by the chemical transport reaction method. The HgGa$_2$S$_4$ single crystal crystallized into a defect chalcopyrite structure (I 4). The lattice constants of the single crystal were found to be a = 5.635 $\AA$ and c = 10.473 $\AA$. The direct and indirect optical energy gaps were found to be 2.84eV and 2.78eV, respectively. Photoluminescence peaks of HgGa$_2$S$_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

$HgGa_2S_4$ 단결정의 광학적 특성 (Optical properties of $HgGa_2S_4$ single crystal)

  • 김형곤;김남오;김병철;최영일;김덕태;현승철;방태환;이경섭;구할본
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 춘계학술대회 논문집
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    • pp.47-52
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    • 2004
  • $HgGa_2S_4$ single crystals were grown by the chemical transport reaction method. The $HgGa_2S_4$ single crystal crystallized into a defect chalcopyrite structure $(I\bar{4})$. The lattice constants of the single crystal were found to be a=5.635 ${\AA}$ and c=10.473 ${\AA}$. The direct and indirect optical energy gaps were found to be 2.84 eV and 2.78 eV, respectively. Photoluminescence peaks of $HgGa_2S_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

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AlGaAs합금의 Al 도핑농도에 대한 효과 (Effect on Al Concentration of AlGaAs Ternary Alloy)

  • 강병섭
    • 반도체디스플레이기술학회지
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    • 제20권4호
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    • pp.125-129
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    • 2021
  • We investigated the electronic property and atomic structure for chalcopyrite (CH) AlxGa1-xAs semiconductor by using first-principles FPLMTO method. The CH-AlxGa1-xAs exhibits a p-type semiconductor with a direct band-gap. For low Al concentration unoccupied hole-carriers are induced, but for high Al concentration it is formed a localized bonding or anti-bonding state below Fermi level. The hybridization of Al(3s)-Ga(4s, or 4p) is larger than that of Al(3s)-As(4s, or 4p). And the Al film on As-terminated surface, Al/AsGa(001), is more energetically favorable one than that on Ga-terminated (001) surface. Consequently, the band-gap of CH-AlxGa1-xAs system increases exponentially with increasing Al concentration. The change of lattice parameter is shown two different configurations with increasing Al concentration. The calculated lattice parameters for CH-AlxGa1-xAs system are compared to the experimental ones of zinc-blend GaAs and AlAs.

CIGS nanopowder 제조 및 특성분석 (Preparation and Characteristics of CIGS nanopowder)

  • 함창우;서정대;조정민;송기봉
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2009년도 추계학술대회 논문집
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    • pp.371-372
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    • 2009
  • We have prepared and characterized CIGS nanopowder for absorber layer of photovoltaic. CIGS nanopowder were obtained at $260^{\circ}C$ for 6 hours from the reaction of $CuCl_2$, $InCl_3$, $GaCl_3$ and Se powder in solvent. The CIGS nanopowder were identified to have a typical chalcopyrite tetragonal structure by using X-ray diffraction(XRD), Inductively Coupled Plasma Auger Electron Spectroscopy (AES), Scanning Electron Microscopy(SEM).

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Sol-gel법에 의한 박막태양전지용 CuInS2 박막의 증착과 특성 (Characteristics and Deposition of CuInS2 film for thin solar cells via sol-gel method0)

  • 이상현;이승엽;박병옥
    • 한국결정성장학회지
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    • 제21권4호
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    • pp.158-163
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    • 2011
  • 박막 태양전지의 저가 고효율화를 실현하기 위해 넓은 면적의 기판 위에 코팅이 가능하며 진공의 유자가 필요 없기 때문에 장치가 간단하고 고순도의 균질한 박막을 얻을 수 있고 박막의 조성을 쉽게 조절할 수 있는 Sol-Gel법을 이용 하였다. Se보다 저가이며 독성이 없고 풍부한 원료인 S로 치환하여 사용하며 Cu/In비 값을 조절하고 tetragonal chalcopyrite $CuInS_2$의 열처리 온도에 따른 박막의 구조적, 광학적 특성에 미치는 변수들의 영향을 알아보았다. XRD pattern을 관찰한 결과 Cu/In비가 1.0일 때 $2{\theta}=27.9^{\circ}$에서 주피크가 가장 강하게 나타났으며 (112) 방향의 배향성을 가진 chalcopyrite상임을 확언 할 수 있었다. 열처리 온도가 증가할수록 (112) 면의 강도가 커지며 $500^{\circ}C$에서 열처리를 한 $CuInS_2$ 박막은 tetragonal 구조의 화학량론적 $CuInS_2$ 특징을 나타내고 본 실험의 샘플의 격자상수를 측정한 값이 a = 5.5032, c = 11.1064 ${\AA}$이며 JCPDS(Joint Committee on Powder Diffraction Standards)에 보고된 데이터 a = 5.523, c = 11.14 ${\AA}$과 거의 일치하였다. 광학적 특성을 알아보기 위해 측정한 광투과율은 가시광선 영역(380~770 nm)에서 전체적으로 30% 이하로 나타났다.