• 한국전기전자재료학회논문지
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• 제21권6호
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• pp.580-583
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• 2008

In this paper, we investigated the properties of chalcogenide glass thin films formed by photo-inducing for use in 1-dimensional photonic crystals. We used Ag-doped amorphous As-Ge-Se-S thin films which belongs in the chalcogenide materials having sensitive photoluminescence properties. The purpose of this experiment is to form the holographic lattice for 1-dimensional photonic crystals. The way in which photo-induce into the amorphous chalcogenide thin films is holographic lithography method. We confirmed the formation of diffraction lattice by sensing the existence of diffraction beam and measured the diffraction efficiency. The results suggest that there is an application possibility with photonic crystals.

• 한국세라믹학회지
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• 제54권6호
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• pp.484-491
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• 2017

Chalcogenide glasses have been investigated in their thermodynamic, structural, and optical properties for application in various opto-electronic devices. In this study, the $Sb_{20}Se_{80-x}Ge_x$ with x = 10, 15, 20, and 25 were selected to investigate the glass stability according to germanium ratios. The thermal, structural, and optical properties of these glasses were measured by differential scanning calorimetry (DSC), X-ray diffraction (XRD), and UV-Vis-IR Spectrophotometry, respectively. The DSC results revealed that $Ge_{20}Sb_{20}Se_{60}$ composition showing the best glass stability theoretically results due to a lower glass transition activation energy of 230 kJ/mol and higher crystallization activation energy of 260 kJ/mol. The structural and optical analyses of annealed thin films were carried out. The XRD analysis reveals obvious results associated with glass stabilities. The values of slope U, derived from optical analysis, offered information on the atomic and electronic configuration in Urbach tails, associated with the glass stability.

• 한국세라믹학회지
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• 제32권12호
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• pp.1424-1432
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• 1995

Chalcogenide glasses having IR (8~12${\mu}{\textrm}{m}$) transmittance were prepared and their densities, thermal and mechanical properties, IR-transmittances and chemical durabilities were determined. Glass transition temperatures (Tg) of Ge-As-Se, Ge-As-Se-Te and Ge-SE-Te system glasses were in the range of 280~3$65^{\circ}C$, 210~236$^{\circ}C$ and 210~26$0^{\circ}C$, respectively. Crystallization temperature (Tc) of Ge-Se-Te system glass was in the range of 305~40$0^{\circ}C$. Their thermal expansion coefficients($\alpha$) were in the range of 11.7~15.2$\times$10-6/K, 15.4~16.0$\times$10-6/K and 17.4~27.8$\times$10-6/K, respectively. Their MOR, hardness and fracture toughness were in the range of 15.2~18.6MPa, 36.1~58.2Kg/$\textrm{mm}^2$, 1.0~1.3 MPa.mm1/2, 18.9~24.9 MPa, 40.9~65.1Kg/$\textrm{mm}^2$, 1.3~1.5 MPa.mm1/2, and 24.1~30.8 MPa, 40.9~86.0Kg/$\textrm{mm}^2$, 1.4~1.8 MPa.mm1/2, respectively. IR transmittance of Ge-Se-Te system glass was about 60%. Ge-O extrinsic absorption peaks at 8, 12 ${\mu}{\textrm}{m}$ were significantly eliminated by the addition of Mg. Chemical durabilities in deionizied water of Ge-Se-Te system glass were good and IR-transmittances decreased with leaching time and temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.33-34
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• 2008

$Ge_1Se_1Te_2$ chalcogenide amorphous materials was prepared by the conventional melt-quenching method. Samples were prepared by e-beam evaporator system and thermal evaporator technique. The thermal properties were investigated in the temperature range 300K-400K and the electrical properties were studied in the voltage range from 0V to 3V below the corresponding glass trasition temperature. The obtained results agree with the electrothermal model for Phase-Change Random Access Memory.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.164-164
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• 2007

Photodiffusion of silver into chalcogenide thin film is one of the most interesting effects that occurs in chalcogenide glass as it theatrically changes the properties of the initial material and forms a ternary. Programmable Metallization Cell(PMC) Randon Access Memory use for photodiffusion of mobile metal is based on the electrochemical growth and removal of nanoscale metallic pathway in thin film of solid electrolyte. This paper investigates the annling properties on Ag-doped $Ge_{25}Se_{75}$ thin film structure and describes the electrical characteristics of PMC-RAM. The composition of the intercalation products containing Ag is confirmed using X-ray diffraction which shows the formation of Ag-doped $Ge_{25}Se_{75}$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.163-164
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• 2008

Chalcogenide glass has been known for many photo induced phenomena and superial electron / optical specific by structure flexibility, unique electronic configuration. It is become known to the greatest specific as photonic material medium that possible to perfect controlling by continuity and photo inducing direction of amorphous chalcogenide. In our experiment, we choose the amorphous As-Ge-Se-S and corning glass as a substrate. And then we have evaporated in the ${\sim}2{\times}10^{-6}$ Torr using a E-beam evaporator, completed thin film sample that have 1um thickness of As-Ge-Se-S in $600{\AA}$, $10{\sim}5{\AA}/s$. At first, we let the change the angle between laser and sample by holography litho method and then, expect that satisfied conclusion which 2-dimension diffraction lattice manufacture and specifics by investing a He-Ne laser for 2000 seconds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.130-131
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• 2008

Chalcogenide glass has been known for many photo induced phenomena and superial electron / optical specific by structure flexibility, unique electronic configuration. It is become known to the greatest specific as photonic material medium that possible to perfect controlling by continuity and photo inducing direction of amorphous chalcogenide. In our experiment, we choose the amorphous As-Ge-Se-S and coming glass as a substrate. And then we have evaporated in the ${\sim}2{\times}10^{-6}$ Torr using a E-beam evaporator, completed thin film sample that have 1um thickness of As-Ge-Se-S 600 $\AA$, 10~5 $\AA$/s. At first, we let the change the angle between laser and sample by holography litho method and then, expect that satisfied conclusion which 2-dimension diffraction lattice manufacture and specifics by investing a He-Ne laser for 2000 seconds.

• 전기의세계
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• 제29권2호
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• pp.111-117
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• 1980

Contacts formed by vacuum evaporation of As-Te-Si-Ge chalcogenide glass onto Al metal (99.9999%) are studied by measuring paralle capacitance C(V), Cp(w), resistance R(V), Rp(w), and I-V characteristics. The fact that contact metal alloying produced high-resistance region is confirmed from the measurements of parallel capacitance and resistance. From the I-V characteristics in the pre-switcing region, it is found that electronic conduction and sitching occurs in the vicinity of metal-amorphous semiconductor interface. From the experimental obsevations, it is concuded that the current flow in the thin film is space-charge limited current (SCLC) due to the tunneling of electrons through the energy barriers.

• 한국자기공명학회논문지
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• 제6권2호
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• pp.113-117
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• 2002

The chalcogenide glass (ALS, $Al_2S_3-La_2S_3$) was prepared by melting a stoichiometric mixture of aluminum powder and $La_2S_3$ under $H_2S$ atmosphere at $1200{\circ}C$. Glasses containing 0.1-0.1% of $Mn^{2+},\;Gd^{3+}$ and $Cu^{2+}$ were also prepared. The characteristic features of the ESR spectra for the transition metal containing ALS glasses are interpreted.

• 한국생산제조학회지
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• 제23권2호
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• pp.133-137
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• 2014

The recent development of electro-optic devices and anticorrosion media has made it necessary investigate infrared optical systems with solid-solid interfaces of materials with amorphous characteristics. One of the most promising classes of materials for these purposes seems to be chalcogenide glasses, which are based on the Ge_Sb_Se system, have drawn much attention because of their use in preparing optical lenses and fibers that are transparent in the range of 3-12 um. In this study, a standard melt-quenching technique was used to prepare amorphous Ge_Sb_Sechalcogenideto be used in the design and manufacture of infrared optical products. The results of structural, optical, and surface roughness analyses of high purity Ge_Sb_Sechalcogenide glasses after various annealing processes reported.