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잔대 추출물과 이들 분획물들의 항산화 및 뇌신경세포 보호 효과 (Antioxidative and Neuroprotective Effects of Extract and Fractions from Adenophora triphylla)

  • 정미자;이상현;박용일;권기한
    • 한국식품영양과학회지
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    • 제45권11호
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    • pp.1580-1588
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    • 2016
  • 잔대의 70% 에탄올 추출물은 강한 항산화 효과 및 산화적 스트레스 조건에서 뇌신경세포 사멸 억제 효과가 있었다. 6개의 분획물 중에 잔대 추출물의 클로로포름 분획물(AT-CH)은 높은 DPPH 라디칼 소거작용 및 세포 내 활성산소종(ROS) 소거작용을 가지고 있었고 $H_2O_2$에 대항하여 뇌신경 세포(SK-N-SH) 보호 효과가 가장 뛰어났다. 활성이 가장 우수한 클로로포름 분획물을 대상으로 주요 물질을 순수분리한 후 $^1H-NMR$, $^{13}C-NMR$ 그리고 EI mass spectra를 이용하여 화학구조를 분석한 결과 phytosterols(${\beta}$-sitosterol과 daucosterol)이라는 것을 알 수 있었다. ${\beta}$-Sitosterol과 daucosterol 역시 산화적 스트레스에 대항하여 SK-N-SH 세포를 보호하는 작용이 있었다. AT-CH 그리고 이것으로부터 분리된 화합물은 p38 경로를 저해하였다. 이들 결과는 AT-CH는 p38 경로를 저해하고 세포 내 ROS 소거작용에 의해 산화적 스트레스로부터 뇌신경세포 보호 효과를 가질 것이라 제안하였다.

고주파 플라즈마 CVD에 의한 초경합금상에 다이아몬드 박막의 합성 (Synthesis of diamond thin film on WC-Co by RF PACVO)

  • 김대일;이상희;박종관;박구범;조기선;박상현;이덕출
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.452-455
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    • 2000
  • Diamond thin films were synthesized on WC-Co substrate at various experimental parameters using 13.56MHz RF PACVD(radio frequency plasma-assisted chemical vapor deposition). In order to increase the nucleation density, the WC-Co substrate was polished with 3$\mu\textrm{m}$ diamond paste. And the WC-Co substrate was pretreated in HNO$_3$: H$_2$O = 1:1 and O$_2$ plasma. In H$_2$-CH$_4$gas mixture, the crystallinity of thin film increased with decreasing CH$_4$concentration at 800W discharge power and 20torr reaction pressure. In H$_2$-CH$_4$-O$_2$gas mixture, the crystallinity of thin film increased with increasing O$_2$concentration at 800W discharge power, 20torr reaction pressure and 4% CH$_4$concentration.

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HFCVD법에 의한 ${CH_3}OH/{H_2}O$ 혼합기체의 다이아몬드 박막성장에 관한 연구 (Diamond Film Growth by Vapor Activation Method Using ${CH_3}OH/{H_2}O$ Gas)

  • 이권재;고재귀
    • 한국재료학회지
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    • 제11권12호
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    • pp.1014-1019
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    • 2001
  • The diamond thin film was deposited on Si(100) substrate from$CH_3OH/H_2O$mixtured gas using a hot filament chemical vapor deposition(HFCVD) method. The deposition condition for samples has been varried with the$CH_3OH/H_2O$composition. Scanning electron microscopy(SEM) and Raman spectroscopy has been employed for the sample analysis. The diamond sample has been obtained below 20Pa with$CH_3OH/H_2O$mixtured gas. The crystallinity of diamond film improved as the composition $CH_3OH$decreases from 60Vol% to 52Vol%, and the sample structure changed from the cauliflower to the diamond structure. But the sample structure was becomes cauliflower at 50Vol% of in$CH_3OH$ in the $CH_3OH/H_2O$. It was shown that the$CH_3OH$ has threshold composition.

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과잉수소 반응분위기에서 Dichloromethane 열분해 반응경로에 관한 연구 (Pyrolytic Reaction Pathway of Dichloromethane in Excess Hydrogen)

  • 원양수
    • 공업화학
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    • 제17권6호
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    • pp.638-643
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    • 2006
  • 과잉수소 반응조건하에서 dichloromethane ($CH_{2}Cl_{2}$)의 열분해 생성물질의 반응경로를 규명하기 위해서 등온 관형반응기를 이용하여 무산소, 1 atm, 반응온도 $525{\sim}900^{\circ}C$, 반응시간 0.3~2.0 sec에서 반응을 수행하였다. $CH_{2}Cl_{2}$ : $H_{2}$ mole 비는 전 실험에서 4 : 96으로 유지하였으며 반응물 $CH_{2}Cl_{2}$ 분해 및 생성물의 농도는 on-line GC를 이용하여 정량 분석하였으며, 미량의 미지 화합물은 batch 시료로써 GC/MS로 정성 분석하였다. 반응시간 1 sec를 기준으로 반응물 $CH_{2}Cl_{2}$$600^{\circ}C$ 부근에서 분해가 시작되어 $780^{\circ}C$에서 99% 이상 분해되었다. 반응 주요생성물은 $CH_{3}Cl$, $CH_{4}$, $C_{2}H_{4}$, $C_{2}H_{6}$, HCl이 생성되었으며, 미량 생성물로는 $CHClCCl_{2}$, CHClCHCl, $CH_{2}CHCl$, $C_{2}H_{2}$가 생성되었다. 본 연구에서는 반응물질 분해 및 중간생성물 분포 특성과 열역학 및 반응속도 원리를 근거로 주요 생성물질 반응경로를 제시하였으며, 그 결과는 $CH_{2}Cl_{2}$ 및 유사한 염화탄화수소 화합물 열분해시 일어날 수 있는 열분해공정 이해를 위한 자료로 이용된다.

Reaction Dynamics of CH3 + HBr → CH4 + Br at 150-1000 K

  • Ree, Jongbaik;Kim, Yoo Hang;Shin, Hyung Kyu
    • Bulletin of the Korean Chemical Society
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    • 제34권8호
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    • pp.2473-2479
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    • 2013
  • The kinetics of the radical-polar molecule reaction $CH_3+HBr{\rightarrow}CH_4+Br$ has been studied at temperatures between 150 and 1000 K using classical dynamics procedures. Potential energy surfaces constructed using analytical forms of inter- and intramolecular interaction energies show a shallow well and barrier in the entrance channel, which affect the collision dynamics at low temperatures. Different collision models are used to distinguish the reaction occurring at low- and high-temperature regions. The reaction proceeds rapidly via a complex-mode mechanism below room temperature showing strong negative temperature dependence, where the effects of molecular attraction, H-atom tunneling and recrossing of collision complexes are found to be important. The temperature dependence of the rate constant between 400 and 1000 K is positive, the values increasing in accordance with the increase of the mean speed of collision. The rate constant varies from $7.6{\times}10^{-12}$ at 150 K to $3.7{\times}10^{-12}$ at 1000 K via a minimum value of $2.5{\times}10^{-12}\;cm^3\;molecule^{-1}\;s^{-1}$ at 400 K.

메틸 라디칼과 산소 분자 반응에 관한 충격관 연구 (Shock Tube Study on the Reaction of Methyl Radical with Molecular Oxygen)

  • 신권수
    • 대한화학회지
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    • 제39권10호
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    • pp.769-775
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    • 1995
  • 메틸 라디칼과 산소 분자 사이의 반응 속도를 입사 충격파를 이용하여 1390부터 2250k 온도범위 및 1.5에서 5.3mol/$m^3$ 밀도 범위에서 213.9nm 파장에서의 메틸 라디칼의 흡수 스펙트럼을 측정하여 고찰하였다. 메틸 라디칼을 생성하기 위한 원천 분자로는 azomethane이 사용되었다. 실험 결과 $CH_3 + O_2{\rightarrow}CH_2O + OH$ 반응의 속도상수는 $k_2=1.35{\times}10^{12}\;exp( - 5900 K/T)\;cm^3 mol^{-1}s^{-1}$ 같이 표현할 수 있었다.

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평판 유도 결합형 $CH_4/H_2/Ar$ 플라즈마를 이용한 GaN 건식 식각 특성 (Dry Etching Characteristics of GaN using a Planar Inductively Coupled CHsub $CH_4/H_2/Ar$ Plasma)

  • 김문영;백영식;태흥식;이용현;이정희;이호준
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제48권9호
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    • pp.616-621
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    • 1999
  • A planar inductively coupled $CH_4/H_2/Ar$plasma was used to investigate dry etch characteristics of GaN as a function of input power, RF bias power, and etch gas composition. Etch rate of GaN increased with input power up to 600 W and was saturated at the higher power. Also, the etch rates increased with increasing RF bias power, composition of $CH_4$ and Ar gas. We achieved the maximum etch rate of $930{\AA}$/min at the input power 400 W, RF bias power 250 W, and operational pressure 10 mTorr. This paper shows that smooth etched surface having roughness less than 1 nm in rms can be obtained by using planar inductively coupled plasma with $CH_4/H_2/Ar$ gas chemistry.

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Effect of Phospho-gypsum on reduction of methane emission from rice paddy soil

  • Ali, Muhammad Aslam;Lee, Chang-Hoon;Kim, Pil-Joo
    • 한국환경농학회지
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    • 제26권2호
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    • pp.131-140
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    • 2007
  • Phospho-gypsum a primary waste by-product in phosphate fertilizer manufacturing industry and a potential source of electron acceptors, such as mainly of sulfate and a trace amount of iron and manganese oxides, was selected as soil amendment for reducing methane $(CH_4)$ emissions during rice cultivation. The selected amendment was added into potted soils at the rate of 0, 2, 10, and 20 Mg $ha^{-1}$ before rice transplanting. $CH_4$ flux from the potted soil with rice plant was measured along with soil Eh and floodwater pH during the rice cultivation period. $CH_4$ emission rates measured by closed chamber method decreased with increasing levels of phospho-gypsum application, but rice yield markedly increased up to 10 Mg $ha^{-1}$ of the amendment. At this amendment level, total $CH_4$ emissions were reduced by 24% along with 15% rice grain yield increment over the control. The decrease in total $CH_4$ emission may be attributed due to shifting of electron flow from methanogenesis to sulfate reduction under anaerobic soil conditions.

부분 예혼합 화염에서 연소실 압력이 연료별($CH_4$, $C_2H_4$, $C_3H_8$) 연소특성과 반응영역에 미치는 영향 (Influence of Changing Combustor Pressure on Combustion Characteristics and Reaction Zone in the Partially Premixed Flame with $CH_4$, $C_2H_4$ and $C_3H_8$)

  • 손제하;김종률;최경민;김덕줄
    • 한국연소학회지
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    • 제16권3호
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    • pp.33-40
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    • 2011
  • Combustion experiments were conducted at three different fuels ($CH_4$, $C_2H_4$ and $C_3H_8$) to investigate the effects of combustor pressure (30 ~ -30 kPa) on combustion charateristics and reaction zone structure. Regardless of the fuels, emission index of CO (EICO) increased with decreasing combustor pressure, and EICO of $C_2H_4$ was mostly affected by changing combustor pressure at subatmospheric pressure. In order to observe reaction zone, $OH^*$, $CH^*$ and ${C_2}^*$ chemiluminescence intensity were measured. The sequence of the chemiluminescence intensity peak position was affected by chemical characteristics of fuels rather than changing combustor pressure. The emission zone thickness of $C_2H_4$ and $C_3H_8$, defined by the full width at half maximum (FWHM) of $CH^*$ intensity profile, were increased with decreasing combustor pressure. however, the thickness of $C_2H_4$ exhibited the opposite tendency due to the characteristics of the fuel as the bond structure.

CH4 Dry Reforming on Alumina-Supported Nickel Catalyst

  • Joo, Oh-Shim;Jung, Kwang-Deog
    • Bulletin of the Korean Chemical Society
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    • 제23권8호
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    • pp.1149-1153
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    • 2002
  • CH4/CO2 dry reforming was carried out to make syn gas on the Ni/Al2O3 catalysts calcined at different temperatures. The Ni/Al2O3 (850 $^{\circ}C)$ catalyst gave good activity and stability w hereas the Ni/Al2O3 $(450^{\circ}C)$ catalyst showed lower activity and stability. The NiO/Al2O3 catalyst calcined at $850^{\circ}C$ for 16 h (Ni/Al2O3 $(850^{\circ}C))$ formed the spinel structure of nickel aluminate, which was confirmed by TPR. The carbon formation rate on the Ni/Al2O3 $(850^{\circ}C)$ catalyst was very low till 20 h, and then steeply increased with reaction time without decreasing the activity for CH4 reforming. The Ni/Al2O3 $(450^{\circ}C)$ catalyst showed high carbon formation rate at the initial reaction time and then, the rate nearly stopped with continuous decreasing the activity for CH4 reforming. Even though the amount of carbon deposition on the Ni/Al2O3 $(850^{\circ}C)$ catalyst was higher than that on the Ni/Al2O3 $(450^{\circ}C)$ catalyst, the activity for CH4ing was also high, which could be attributed to the different type of the carbon formed on the catalyst surface.