• Korean Chemical Engineering Research
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• 제47권3호
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• pp.373-379
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• 2009

고정층 반응기에서 cesium carbonate 흡착제를 사용하여 이산화탄소($CO_2$), 질소 및 수분의 혼합기체로부터 $CO_2$를 수착하여 $CO_2$-cesium carbonate의 반응속도론을 구하기 위하여 $CO_2$의 파과곡선을 측정하였다. 비촉매 불균일반응계에서 반응속도론을 해석하기 위하여 $CO_2$의 파과곡선을 사용하여 비활성화 모델로부터 반응속도론을 구하고 $CO_2$의 파과곡선의 비선형해석으로부터 비활성화 모델에서 수착속도상수와 비활성속도상수를 구하였다.

• Bulletin of the Korean Chemical Society
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• 제32권6호
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• pp.2091-2092
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• 2011

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2002년도 추계학술발표회요약집
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• pp.216-216
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• 2002

• Nuclear Engineering and Technology
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• 제29권2호
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• pp.127-137
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• 1997

Equilibrium concentrations of major elements in an underground repository with a capacity of 100,000 drums have been simulated using the geochemical computer code (EQMOD). The simulation has been carried out at the conditions of pH 12 to 13.5, and Eh 520 and -520 mV. Solubilities of magnesium and calcium decrease with the increase of pH. The solubility of iron increases with pH at Eh -520 mV of reducing environment while it almost entirely exists as the precipitate of Fe(OH)$_3$(s) at Eh 520 mV of oxidizing environment. All of cobalt and nickel are predicted to be dissolved in the liquid phase regardless of pH since the solubility limit is greater than the total concentration. In the case of cesium and strontium, all forms of both ions are present in the liquid phase because they have negligible sorption capacity on cement and large solubility under disposal atmosphere. And thus the total concentration determines the equilibrium concentration. Adsorbed amount of iodide and carbonate are dependent on adsorption capacity and adsorption equilibrium constant. Especially, the calcite turns out to be a solubility-limiting phase on the carbonate system. In order to validate the model, the equilibrium concentrations measured for a number of systems which consist of iron, cement, synthetic groundwater and radionuclides are compared with those predicted by the model. The concentrations between the model and the experiment of nonadsorptive elements cesium, strontium, cobalt nickel and iron, are well agreed. It indicates that the assumptions and the thermodynamic data in this work are valid. Using the adsorption equilibrium constant as a free parameter, the experimental data of iodide and carbonate have been fitted to the model. The model is in a good agreement with the experimental data of the iodide system.

• Bulletin of the Korean Chemical Society
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• 제29권7호
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• pp.1379-1385
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• 2008

Highly efficient synthesis of substituted benzo[1,4]oxazin-3-ones and pyrido[1,4]oxazin-2-ones under microwave irradiation via Smiles rearrangement is reported. Substituted benzo[1,4]oxazin-3-ones and pyrido[1,4]oxazin-2-ones were obtained by treatment of substituted 2-chlorophenols or 2-chloropyridols with N-substituted 2-chloroacetamide in the presence of potassium carbonate in MeCN and subsequent exposure to cesium carbonate in DMF. All the reactions which take 2-10 hours under conventional condition were completed successfully within a few minutes under microwave irradiation giving moderate to excellent yields.

• 대한방사성의약품학회지
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• 제5권2호
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• pp.158-162
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• 2019

[¹¹C]GR205171, a Neurokinin 1 (NK1) radioligand, has been known as such a promising PET probe for quantitation of NK1 receptors in the brain by positron emission tomography (PET) imaging. First trial to synthesis of [¹¹C]GR205171 was to use methylene chloride and tetrabutylammonium hydroxide for preactivation of precursor, but the result was not successful in radiochemical yield (0~25%) and unreliable. 7 years later, inorganic base (Cs₂CO₃) was tried to achieve higher radiochemical yield, and they showed higher yield (~53%). We have tried to repeat the same synthesis method, but it did not work properly, because there were the lack of the detail procedure and still reproducibility in radiochemical yield. Here we report the improved synthesis protocol to produce [¹¹C]GR205171 in high yield via commercial automated synthesizer. The sonicator which combines water heating bath was used to activate desmethyl-GR205171, and this method showed high efficiency and reasonable yields (4.7 ± 0.6%, non-decay corrected from molecular sieve trap) with >95% radiochemical purity.

• 대한화학회지
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• 제56권4호
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• pp.468-472
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• 2012

마이크로웨이브를 이용한 가열 방법과 MeO-PEG-OMe를 용매로 사용하여, benzo-[1,4]-oxazinone의 효율적인 one-pot 합성방법을 개발하였으며, 개발한 합성방법을 이용하여, 8 가지의 benzo-[1,4]-oxazinone 화합물과 1H-pyrido[2,3-b][1,4]-oxazin-2-(3H)-one을 좋은 수율로 합성하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.451-451
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• 2012

Instead of a highly toxic CdSe and ZnScore-shell,InP/ZnSecore-shell quantum dots [1,2] were investigated as an active material for quantum dot light emitting diode (QD-LED). In this paper, aquantum dot light-emitting diode (QDLED), consisting of a InP/ZnS core-shell type materials, with the device structure of glass/indium-tin-oxide (ITO)/PEDOT:PSS/Poly-TPD/InP-ZnS core-shell quantum dot/Cesium carbonate(CsCO3)/Al was fabricated through a simple spin coating technique. The resulting InP/ZnS core-shell QDs, emitting near blue green wavelength, were more efficient than the above CdSe QDs, and their luminescent properties were comparable to those of CdSe QDs.Thebrightness ofInP/ZnS QDLED was maximumof 179cd/m2.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.292-292
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• 2016

Transition metal dichalcogenides (TMDs) with a two-dimensional layered structure have been considered highly promising materials for next-generation flexible, wearable, stretchable and transparent devices due to their unique physical, electrical and optical properties. Recent studies on TMD devices have focused on developing a suitable doping technique because precise control of the threshold voltage ($V_{TH}$) and the number of tightly-bound trions are required to achieve high performance electronic and optoelectronic devices, respectively. In particular, it is critical to develop an ultra-low level doping technique for the proper design and optimization of TMD-based devices because high level doping (about $10^{12}cm^{-2}$) causes TMD to act as a near-metallic layer. However, it is difficult to apply an ion implantation technique to TMD materials due to crystal damage that occurs during the implantation process. Although safe doping techniques have recently been developed, most of the previous TMD doping techniques presented very high doping levels of ${\sim}10^{12}cm^{-2}$. Recently, low-level n- and p-doping of TMD materials was achieved using cesium carbonate ($Cs_2CO_3$), octadecyltrichlorosilane (OTS), and M-DNA, but further studies are needed to reduce the doping level down to an intrinsic level. Here, we propose a novel DNA-based doping method on $MoS_2$ and $WSe_2$ films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures. The available n-doping range (${\Delta}n$) on the $MoS_2$ by Ln-DNA (DNA functionalized by trivalent Ln ions) is between $6{\times}10^9cm^{-2}$ and $2.6{\times}10^{10}cm^{-2}$, which is even lower than that provided by pristine DNA (${\sim}6.4{\times}10^{10}cm^{-2}$). The p-doping change (${\Delta}p$) on $WSe_2$ by Ln-DNA is adjusted between $-1.0{\times}10^{10}cm^{-2}$ and $-2.4{\times}10^{10}cm^{-2}$. In the case of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions) doping where $Eu^{3+}$ or $Gd^{3+}$ ions were incorporated, a light p-doping phenomenon is observed on $MoS_2$ and $WSe_2$ (respectively, negative ${\Delta}n$ below $-9{\times}10^9cm^{-2}$ and positive ${\Delta}p$ above $1.4{\times}10^{10}cm^{-2}$) because the added $Cu^{2+}$ ions probably reduce the strength of negative charges in Ln-DNA. However, a light n-doping phenomenon (positive ${\Delta}n$ above $10^{10}cm^{-2}$ and negative ${\Delta}p$ below $-1.1{\times}10^{10}cm^{-2}$) occurs in the TMD devices doped by Co-DNA with $Tb^{3+}$ or $Er^{3+}$ ions. A significant (factor of ~5) increase in field-effect mobility is also observed on the $MoS_2$ and $WSe_2$ devices, which are, respectively, doped by $Tb^{3+}$-based Co-DNA (n-doping) and $Gd^{3+}$-based Co-DNA (p-doping), due to the reduction of effective electron and hole barrier heights after the doping. In terms of optoelectronic device performance (photoresponsivity and detectivity), the $Tb^{3+}$ or $Er^{3+}$-Co-DNA (n-doping) and the $Eu^{3+}$ or $Gd^{3+}$-Co-DNA (p-doping) improve the $MoS_2$ and $WSe_2$ photodetectors, respectively.