• 연구논문집
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• s.34
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• pp.131-138
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• 2004

Porous silicon nitride ceramics were prepared by Self-propagating High Temperature Synthesis from silicon powder, silicon nitride powder and the pore-forming precursor. The microstructure, porosity and the flexural strength of the porous silicon nitride ceramics were varied according to the Si/$Si_3N_4$ ratio, size and amount of the pore-forming precursors. Some samples exhibited as high flexural strength as $162\pm24$ MPa. The high strength is considered to result from the fine pore size and the strong bonding among the silicon nitrid particles.

• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.222-226
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• 1998

$Cu_3N$ film deposited on silicon oxide substrate by r.f. reactive sputtering technique. Synthesis and properties of copper nitride film were investigated for its possible application to Cu metallization as adhesive interlayer between copper and $SiO_2. Cu_3N$ film was synthesized at the substrate temperature ranging from $100^{\circ}C$ to $200^{\circ}C$ and at nitrogen gas ratio above $X_{N2}=0.4. Cu_3N, CuN_x$, and FGM-structured $Cu/CuN_x$ films prepared in this work passed Scotch-tape test and showed improved adhesion property to silicon oxide substrate compared with Cu film. Electrical resistivity of copper nitride film had a dependency on its lattice constant and was ranged from 10-7 to 10-1 $\Omega$cm. Copper nitride film was, however, unstable when it was annealed at the temperature above $400^{\circ}C$.

• Journal of Powder Materials
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• v.4 no.3
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• pp.196-204
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• 1997

Joining of AIN ceramics to W and Cu by active-metal brazing method was tried with use of (Ag-Cu)-Ti alloy as insert-metal. Joints were produced under various conditions of temperature, holding time and Ti-content in (Ag-Cu) alloy Reaction and microstructural development in bonded interface were investigated through observation and analysis by SEM/EDS, EPMA and XRD. Joint strengths were measured by shear test. Bonded interface consists of two layers: an insert-metal layer of eutectic Ag- and Cu-rich phases and a reaction layer of TiN. Thickness of reaction layer increases with bonding temperature, holding time and Ti-content of insert-metal. It was confirmed that the growth of reaction layer is a diffusion-controlled process. Activation energy for this process was 260 KJ/mol which is lower than that for N diffusion in TiN. Maximum shear strength of 108 MPa and 72 MPa were obtained for AIN/W and AIN/Cu joints, respectively. Relationship between processing variables, joint strength and thickness of reaction layer was also explained.

• Proceedings of the KACD Conference
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• 2003.11a
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• pp.569-569
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• 2003

I. Objectives The purpose of this study was to evaluate the effort of a modified luting procedure called "dual bonding technique" by compare micro-shear bond strength to different luting procedures of ceramics to dentin. II. Materials and Methods Eighty-four freshly extracted caries-and restoration-free human third molar were embedded in epoxy resin using acrylic ring. Flat superficial occlusal dentin surfaces were obtained, initially using a Low speed diamond saw and exposed detin surface was group with ＃600-grit SiC paper.(omitted)

• Journal of the Korean Ceramic Society
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• v.44 no.6 s.301
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• pp.338-342
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• 2007

Porous silicon nitride ceramics were prepared by SHS (Self-Propagating High Temperature Synthesis) from silicon powder, silicon nitride powder and pore-forming precursor. The microstructure, porosity and the flexural strength of the porous silicon nitride ceramics were varied according to the Si/Si3N4 ratio, size and amount of the pore-forming precursors. Some sample exhibited as high flexural strength as $162{\pm}24\;MPa$. The high strength is considered to result from the fine pore size and the strong bonding amoung the silicon nitride particles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.324-324
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• 2008

Piezoelectric ceramics is an active element that makes stator to vibrate to generate rotational force in ultrasonic motors. In drive of ultrasonic motors, many factors that affect to the resonance characteristics of piezoelectric ceramics exist. For example, those factors are bonding condition with elastic body, the magnitude of electric field, the normal force for frictional drive and the emission of heat due to vibration and friction and so on. Therefore, it is important to research the inclination of property variation of piezoelectric ceramics in circumstance that has complex elements. In this paper, we focused and analyzed the resonance characteristics of ultrasonic motor due to the magnitude of the driving voltage and normal force.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.308-312
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• 2003

The packaging of the integrated circuits requires knowledge of ceramics and metals to accommodate the fabrication of modules that are used to construct subsystems and entire systems from extremely small components. Composite ceramics ($Al_2O_3-SiO_2$) were tested for substrates. A stress analysis was conducted for a linear work-hardening metal cylinder embedded in an infinite ceramic matrix. The bond between the metal and ceramic was established at high temperature and stresses developed during cooling to room temperature. The calculations showed that the stresses depend on the mismatch in thermal expansion, the elastic properties, and the yield strength and work hardening rate of the metal. Experimental measurements of the surface stresses have also been made on a $Cu/Al_2O_3-SiO_2$ ceramic system, using an indentation technique. A comparison revealed that the calculated stresses were appreciably larger than the measured surface stresses, indicating an important difference between the bulk and surface residual stresses. However, it was also shown that porosity in the metal could plastically expand and permit substantial dilatational relaxation of the residual stresses. Conversely it was noted that pore clusters were capable of initiating ductile rupture, by means of a plastic instability, in the presence of appreciable tri-axiality. The role of ceramics for packaging of microelectronics will continue to be extremely challenging.

• Journal of the Korean Ceramic Society
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• v.15 no.2
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• pp.89-97
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• 1978

The basic mechanism of adherence in sintered high purity alumina ceramic-to-metal bonding was studied. Emphasis was placed on flux composition, porosity of the fired ceramics, and metallizing mixtures. The study was conducted on 95 and 99.5% alumina, using molydbenum-manganese, molybdenum-manganese-silicon dioxide metallizing compositions. Metallizing was performed in wet hydrogen (dew point, ＋17$^{\circ}C$) at 145$0^{\circ}C$ for 45min. This experiment indicated that adhernece mechanism of ultra high purity alumina ceramic was attributed to formation of $MnAl_2O_$4, and in the case of 95% alumina containing glass, the migration of glass from the interface into the void of the metal coating was the main role to the adhrence. It showed also that greater the bond-strength was resulted as porosity was increased.

• Restorative Dentistry and Endodontics
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• v.39 no.3
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• pp.226-229
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• 2014

Orthodontic extrusion is usually performed by means of a fixed orthodontic appliance that utilizes arch wire attached to adjacent teeth and transfers the desired force by elastic from the wire to the root. However, clinicians often encounter cases where the bonding required for tooth traction is not possible because the adjacent teeth have been restored with ceramic or veneer. The purpose of this case report is to describe a modified orthodontic extrusion appliance that is useful when conventional orthodontic treatment is not possible. The modified appliance was fabricated using an artificial tooth, clear plastic sheeting, and a braided fiber-reinforced composite strip that covered adjacent teeth without bonding. It satisfied the esthetic and functional needs of the patient and established the optimal biologic width.

• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.18-20
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• 1997

The fabrication process of silicon-diamond(SOD) structure wafer were studied. Microwave plasma chemical vapor deposition (MWPCVD) and annealing technology were used to synthesize diamond film with high resistivity and thermal conductivity. Bonding and etchback silicon-on-diamond (BESOD) were utilized to form supporting substrate and single silicon thin layer of SOD wafer. At last, a SOD structure wafer with 0.3~1$\mu\textrm{m}$ silicon film and 2$\mu\textrm{m}$ diamond film was prepared. The characteristics of radiation for a CMOS integrated circuit (IC) fabricated by SOD wafer were studied.