• Journal of the Korean Ceramic Society
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• v.43 no.12 s.295
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• pp.852-858
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• 2006

It is well known that $BaMgAl_{10}O_{17}:Eu^{2+}$ (BAM) and $CaMgSi_2O_6:Eu^{2+}$ (CMS) are a highly efficient blue phosphor. However, these phosphors in the form of thin films have not yet been realized clue to technical difficulties. We prepared thin film type BAM and CMS phosphors on quartz glass substrate using a pulsed laser deposition technique. The luminescent and structural properties of thin film phosphors were monitored as a function of key processing parameters such as oxygen partial pressure inside the deposition chamber, deposition time, laser energy density and the type of post-deposition treatments used. Even though we could not obtain single homogenous phases, thin films with large homogenous areas and a high photoluminescence could be produced by optimizing these processing parameters.

• Journal of the Korean Ceramic Society
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• v.44 no.6 s.301
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• pp.303-307
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• 2007

Transparent In-doped zinc oxide (IZO) thin films are deposited with variation of pulsed DC power at Ar atmosphere on coming 7059 glass substrate by pulsed DC magnetron sputtering. A c-axis oriented IZO thin films were grown in perpendicular to the substrate. The optical transmittance spectra showed high transmittance of over 80% in the UV-visible region and exhibited the absorption edge of about 350 nm. Also, the IZO films exhibited the resistivity of ${\sim}10^{-3}{\Omega}\;cm$ and the mobility of ${\sim}6cm/V\;s$. Organic Light-emitting diodes (OLEDs) with IZO/N,N'-diphenyl-N, N'-bis(3-methylphenl)-1, 1'-biphenyl-4,4'-diamine (TPD)/tris (8-hydroxyquinoline) aluminum ($Alq_3$)/LiF/Al configuration were fabricated. LiF layer inserted is used as an interfacial layer to increase the electron injection. Under a current density of $100\;mA/cm^2$, the OLEDs show an excellent efficiency (9.4 V turn-on voltage) and a good brightness ($12000\;cd/m^2$) of the emission light from the devices. These results indicate that IZO films hold promise for anode electrodes in the OLEDs application.

• Journal of the Korean Ceramic Society
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• v.44 no.6 s.301
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• pp.319-324
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• 2007

The structural properties of $SiO_2$ liquid at finite temperatures have been investigated by molecular dynamics (MD) simulations utilizing the Tersoff interatomic potential. During cooling process, the $SiO_2$ liquid structure quenched with a cooling rate of $1.0{\times}10^{11}K/sec$ shows the traditional properties observed in the experiments. The coordination defects of system decrease with decreasing temperature up to 17%. The $SiO_2$ glass quenched up to 1600 K contains defects consisting of the fivefold coordination of Si, and the threefold coordination of O atoms. The calculated diffusion coefficients which are calculated by monitoring. the mean-square displacement of atoms drop to almost zero below 3000 K ($<10^{-6}\;cm^2/sec$) but has a fluctuations at low temperature. The structure properties of $SiO_2$ liquid shows a significant dependence on the temperature during cooling process. Bond-angle distribution at around $120^{\circ}$ originate from the O and Si atoms consisting of the over-coordinated O atoms.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.518-522
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• 2013

This study investigatesthe coloration mechanism by identifying the factor that affects thered coloration of copper red glazesin traditional Korean ceramics. The characteristics of the reduction-fired copper red glaze's sections are analyzed using an optical microscope, Raman spectroscopy, scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDX). The sections observed using an optical microscope are divided into domains of surface, red-bubble, and red band. According to the Raman micro spectroscopy analysis results, the major characteristic peak is identified as silicate in all three domains, and the intensity of $Cu_2O$ increases toward the red band. In addition, it is confirmed that the most abundant CuO exists in the glaze bubbles. Moreover, CuO and $Cu_2O$ exist as fine particles in a dispersed state in the surface domain. Thus, Cu combined with oxygen is distributed evenly throughout the copper red glaze, and $Cu_2O$ is more concentrated toward the interface between body and glaze. It is also confirmed that CuO is concentrated around the bubbles. Therefore, it is concluded that the red coloration of the copper red glaze is revealed not only through metallic Cu but also through $Cu_2O$ and CuO.

• Journal of the Korean Ceramic Society
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• v.35 no.11
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• pp.1148-1154
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• 1998

Ga K-edge EXAFS spectra of PbO-Ga2O3 glasses were recorded at liquid nitrogen temperature and analyz-ed in order to quantitatively understand the medium-range-order arrangement around gallium in the glasses. The second peak was generated from a backscattering of the neighbor balliums and the Ga-Ga distance is ~3.13 A with Ga coordination number of ~2.7 Therefore GaO4 tetrahedra are connected through the cor-ner~sharing mode and form their own clusters made of the tetrahedra sharing more than 3 corners while some chains or rings are also present. These connection schemes of the GaO4 tetrahedra are believed to form the substantial part of the network structure.

• Journal of the Korean Ceramic Society
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• v.35 no.11
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• pp.1162-1170
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• 1998

Applicability of crystallization kinetics on thermal analysis was investigated for PbO-TiO2-B2O3-BaO glass systems together with theoretical background of kinetics and electron microscopic observations on nu-cleation and crystallization. Kissinger equation can be used on DTA under the assumption that the nucleus density is fixed during DTA runs. Crystallization mechanism affected on the activation energy Ek obtained from powder samples which is used for domination of surface crystallization. Avrami parameter n that was obtained from Ozawa equation represented closely the crystallization mechanisms observed by an electron microscope. The modified Kissinger equation takes into account crystallization mechanism thereby pro-ducing the true activation energy of crystallization.

• Journal of the Korean Ceramic Society
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• v.40 no.3
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• pp.213-218
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• 2003

Band gap energies of SrTiO$_3$(STO) thin film on glass substrates were studied in terms of annealing temperature. The STO thin film was fabricated by our newly developed method based on the combination of the Self-Assembled Monolayer(SAM) technique and the Liquid Phase Deposition(LPD) method. The as-deposited film demonstrated a direct band gap energy of about 3.65 eV, which further increased to 3.73 eV and 3.78 eV by annealing at 40$0^{\circ}C$ and 50$0^{\circ}C$, respectively. The band gap energy saturated at about 3.70 eV for the crystallized film which was obtained by annealing at 600-$700^{\circ}C$. The relatively large band gap energies of our crystallized films were due to the presence of minor amorphous phase, grain boundaries and oxygen vacancies generated by annealing in air.

• Journal of the Korean Ceramic Society
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• v.20 no.1
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• pp.25-30
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• 1983

This experiment was studied in the system of (1-x) CaO MgO $2SiO-Al_2O_3$ to investigate forming of solid solution. The technique empolyed was the well known water-quenching method. Differential thermal analysis of the each glass water quenched indicated that under 30 mole% $Al_2O_3$ was lowered with increasing of the amount of $Al_2O_3$ It was supposed by X-ray diffraction patterns of each specimen sintered at various temperature that only solid solution was formed under the 30mole % $Al_2O_3$ compositions solid solution and anorthite were formed at the 20mole% $Al_2O_3$ composition anorthite solid solution and spinel$(MgAl_2O_4)$ were formed over the 40mole% $Al_2O_3$ compositions. The maximum density and thermal expanison coefficient was 2.89g/cm 7.74x106./C$^{\circ}$ respectively in the composi-tion of 10 mole% $Al_2O_3$ . All the specimens showed linear thermal expansion behavior. Microhardness was as high as 850kg/nm2 in the composition of 5, 10, 20 mole % $Al_2O_3$ and dielectric constant was 7.3-6.9.

• Journal of the Korean Ceramic Society
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• v.28 no.8
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• pp.585-592
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• 1991

ZnO films were deposited onto Corning glass 7059 substrate in the temperature range from $200^{\circ}C$ to $450^{\circ}C$ by chemical vapor deposition technique using the hydrolysis of Diet ylzinc (DEZ). As the deposition temperature increased from $200^{\circ}C$ to $350^{\circ}C$, the deposition rate increased with the apparent activation energy of ∼23kJ/mole. Further increase of the deposition temperature above $400^{\circ}C$, however, resulted in a reduction of the rate. It was found that ZnO film grew with a strong C-axis preferred orientation at the temperature of $400^{\circ}C$. As the deposition temperature increased, the film resistivity decreased down to ∼0.2 $\Omega$cm at $450^{\circ}C$. The electrical resistivity was governed more likely by electron concentration rather than by electron mobility. Average optical transmission of the films in the optical wavelength range of 400 nm to 900 nm was over 90% and the optical energy band gap of 3.28∼3.32 eV was obtained from the direct transition.

• Journal of the Korean Ceramic Society
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• v.52 no.2
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• pp.108-113
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• 2015

In an effort to evaluate the practicability of an imprinting technique for amorphous chalcogenide film in Ge-based compositions, we investigate the deformation behavior of the surface of amorphous $GeSe_2$ film deposited via a thermal evaporation route according to varying static loads applied at elevated temperatures. We observe that, under these static loading conditions, crystallization tends to occur on its surface relatively more easily than in As-based $As_2Se_3$ films. As for the present $GeSe_2$ film, higher processing temperatures are required in order to make its surface reflect the given stamp patterns well; however, in this case, its surface becomes partially crystallized in the monoclinic $GeSe_2$ phase. The increased vulnerability of this amorphous $GeSe_2$ film toward surface crystallization under static loading, when compared with the $As_2Se_3$ counterpart, is explained in terms of the topological aspects of its amorphous structure.