• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.80-80
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• 2009

$BaTiO_3$ has high permittivity so that has been applied to dielectric and insulator materials in 3D system-level package integration. In order to achieve excellent performance of device, the $BaTiO_3$ layer should be highly dense. In this study, $BaTiO_3$ thick films were prepared by the inkjet printing method using 4 vol.% $BaTiO_3$ colloidal inks and cured at $28^{\circ}C$ for 5 h after infiltration of polymer resin for non-sintered process using 3 vol.% cyanate ester emulsion ink. From the obtained results. packing density was determined to be improved by overlapping rabbit ears which were generated by coffee ring effect. We also calculated the packing densities of the films and correlated these packing densities to the measured permittivity of the films.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.40.1-40
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• 2003

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.907.2-907.2
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• 2006

• Journal of the Korean Ceramic Society
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• v.40 no.7
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• pp.672-676
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• 2003

The single crystalline thick films of Y$_3$Fe$\sub$5/O$\sub$12/(YIG), Y$_3$Fe$\sub$5/O$\sub$12/(Bi:YIG), (TbBi)$_3$(FeAlGa)$\sub$5/O$\sub$12/ (TbBi:YIG) were grown on (GdCa)$_3$(GaMgZr)$\sub$5/O$\sub$12/ (SGGG) by Liquid Phase Epitaxy (LPE). The change of lattice mismatch, Bi concentration, characteristic of magnetic and surface morphology were investigated in the thick film growth as a function of species and amount of chemical element, while substrate rotation speed, supercooling and growth time were kept constant. It was observed that the lattice constant of garnet single crystalline thick films of TbBi:YIG (12.500 ${\AA}$) is closed to the one of the substrate (12.496 ${\AA}$). Besides magnetic field of saturation exhibits excellent results (150 Oe).

• The Korean Journal of Ceramics
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• v.6 no.1
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• pp.15-20
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• 2000

Thick inorganic-organic hybrid films were prepared on ITO-coated glass substrates by the electrophoretic sol-gel deposition of polyphenylsilsesquioxane particles. The morphology of the deposited films changed from the aggregate of the spherical particles to monolith by heat treatment at temperatures higher than $200^{\circ}C$. Transparency of the films was significantly improved accompanied by the morphological change of the particles. The degree of the morphological change was governed by two factors; maximum heat treatment temperature and heating rate. Transparent thick films of ca. 3$\mu\textrm{m}$ in thickness were obtained only by heat treatment at $400^{\circ}C$ for 2h with rapid heating from room temperature to $400^{\circ}C$. These films obtained were strongly adhered to the ITO-coated glass substrates and has a very smooth surface.

• Korean Journal of Materials Research
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• v.29 no.9
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• pp.547-552
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• 2019

In the present study, the thermal conductivity of a silicon nitride($Si_3N_4$) thin-film is evaluated using the dual-wavelength pump-probe technique. A 100-nm thick $Si_3N_4$ film is deposited on a silicon (100) wafer using the radio frequency plasma enhanced chemical vapor deposition technique and film structural characteristics are observed using the X-ray reflectivity technique. The film's thermal conductivity is measured using a pump-probe setup powered by a femtosecond laser system of which pump-beam wavelength is frequency-doubled using a beta barium borate crystal. A multilayer transient heat conduction equation is numerically solved to quantify the film property. A finite difference method based on the Crank-Nicolson scheme is employed for the computation so that the experimental data can be curve-fitted. Results show that the thermal conductivity value of the film is lower than that of its bulk status by an order of magnitude. This investigation offers an effective way to evaluate thermophysical properties of nanoscale ceramic and dielectric materials with high temporal and spatial resolutions.

• Journal of the Korean Ceramic Society
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• v.27 no.3
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• pp.299-310
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• 1990

The fabrication of Y-Ba-Cu-O films and experimental factors affecting to characteristics of films are studied in detail. Superconducting thick films are fabricated by the screen printing method. The metal-citrate precursors are obtained simply by mixing of metal nitrate with citric acid. The particle size of heat treated powders is approximately 0.3-1${\mu}{\textrm}{m}$ and the thickness of film is estimated as 30-35${\mu}{\textrm}{m}$. According to the XRD analysis, the films sintered at 870-93$0^{\circ}C$ for 10min. -6hr with P(oxygen)=1atm has the unique orthorhombic crystal symmetry indicating the 123 phae. Tc, onset is determined around 92-87。K, but it shows semiconducting behavior probably due to the oxygen deficiency in the lattice, porosity and impurities in films. Extrapolated Tc, zero is estimated as 76-50。K. For films sintered at 90$0^{\circ}C$ for 1hr, superconducting properties are observed with the room temperature resistivity of 0.025$\Omega$.cm Tc, onset at 88。K and Tc, zero at 63。K.

• Journal of the Korean Ceramic Society
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• v.52 no.1
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• pp.72-76
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• 2015

150-nm-thick In-Zn-Tin-Oxide (IZTO) films were deposited by RF magnetron sputtering after a 10 to 50-nm-thick $SiO_2$ buffer layer was deposited by plasma enhanced chemical vapor deposition (PECVD) on polyethylene terephthalate (PET) substrates. The electrical, structural, and optical properties of the IZTO/$SiO_2$/PET films were analyzed with respect to the thickness of the $SiO_2$ buffer layer. The mechanical properties were outstanding at a $SiO_2$ thickness of 50 nm, with a resistivity of $1.45{\times}10^{-3}{\Omega}-cm$, carrier concentration of $8.84{\times}10^{20}/cm^3$, hall mobility of $4.88cm^2/Vs$, and average IZTO surface roughness of 12.64 nm. Also, the transmittances were higher than 80%, and the structure of the IZTO films were amorphous, regardless of the $SiO_2$ thickness. These results indicate that these films are suitable for use as a transparent conductive oxide for transparency display devices.

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.385-390
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• 1996

The electrical resistivity of the ceramic glaze coated on ceramic substrate plays an important role on the characteristics of the thick and thin film electrical circuits. In this study the effects of the various modifiers on the electrical resistivity were examined in SiO2-Al2O3-B2O3-RO-Na2O (RO=CaO , SrO, BaO, PbO) glass system. In alkali free glasses where divalent cations are responsible for electrical conduction the electrical conductivity of th glasses increased with the ionic size of divalent cations due to the decrease in the bond strength between oxyben and divalent cation. In Na2O containing glasses however where Na+ ion is responsible for electrical conduction the ionic conductivity decreased with the ionic size of divalent cations because the blocking effect of the cations on Na+ ion movement increased with larger divalent cations. Na+ ionic conduction also depended on the glass structure relaxation due to the corrdination number changes of B2O3 and Al2O3 which varied with the NaO2 content in the glass.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.735-738
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• 2003

Downsizing electronics requires precision position control with an accuracy of sub-micron order, which demands development of ultra-fine displacive devices. Piezoelectric transducer is one of devices transferring electric field energy into mechanical energy and being capable for fine displacement control. The transducer has been widely used as fine Position control device Multilayer piezoelectric actuator, one of typical piezo-transducer, is fabricated by stacking alternatively ceramic and electrode layers several hundred times followed by cofiring process. Electrode material should be tolerable in the firing process maintaining at ceramic-sintering temperatures up to $1100{\sim}1300^{\circ}C$. Ag-Pd can be used as stable electrode material in heat treatment above $960^{\circ}C$. Besides, adding small quantity ceramic powder allow the actuator to be fabricated in a good shape by diminishing shrinkage difference between ceramic and electrode layers, resulting in avoidance of crack and delamination at and/or nearby interface between ceramic an electrode layers. This study presents synthesis of nano-oxide-added Ag/Pd powders and its feasibility to candidate material tolerable at high temperature. The powders were formed in a co-precipitation process of Ag and Pd in nano-oxide-dispersed solution where Ag and Pd precursors are melted in $HNO_3$ acid.