• 마이크로전자및패키징학회지
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• 제24권4호
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• pp.39-46
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• 2017

본 연구는 평판형 히터용 금속방열판상의 세라믹 절연층 제조, 즉 절연성 금속기판에 관한 것이다. 반도체나 디스플레이의 열처리 공정 등에 사용되는 평판형 히터를 제조함에 있어서, 온도 균일도를 높이기 위해 금속 방열판으로서 열전도율이 높고, 비교적 가벼우며, 가공성 좋은 알루미늄 합금 기판이 선호된다. 이 알루미늄 기판에 발열 회로 패턴을 형성하기 위해서는 금속 기판에 절연층으로서 고온 안정성이 우수한 세라믹 유전체막을 코팅하여야 한다. 금속 기판상에 세라믹 절연층을 형성함에 있어서 가장 빈번히 발생하는 첫 번째 문제는 금속과 세라믹의 이종재료 간의 큰 열팽창계수 차이와 약한 결합력에 의한 층간박리 및 균열발생이다. 두 번째 문제는 절연층의 소재 및 구조적 결함에 따른 절연파괴이다. 본 연구에서는 이러한 문제점 해소를 위해 금속소재 기판과 세라믹 절연층 사이에 완충층을 도입하여 이들 간의 기계적 매칭과 접합력 개선을 도모하였고, 다중코팅 방법을 적용하여 절연막의 품질과 내전압 특성을 개선하고자 하였다.

• 한국환경과학회지
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• 제14권12호
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• pp.1163-1170
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• 2005

The microbial adsorption characteristics of two different media for biological treatment were studied using attached diverse microbes onto activated carbon and ceramic. The results in the experiments of the characteristics of physical adhesion on two different media with addition of high and low concentrated substrate in the culture were observed that the efficient of adhesion onto F-400 activated carbon was higher over that of ceramic due to the surface area of media. The irradiation treatment by ultrasonication with 400 W power and 3 min retention time on the media without addition substrate conditions and subsequent mixing throughly the culture showed the highest efficiency of cell detachment on the media. Three different microbes, P. ovalis, A calcoaceticus, and B. subtillis were used for the study of the characteristics of microbial adhesion on the media. p ovalis showed the highest adhesion capability while B. subtillis showed the lowest capability adhesion onto media either addition of substrate in the culture. The mixed bacterial culture showed $10\%$ lower removal efficiency of DOC in the low concentrated substrate culture compared to the single pure culture. Whileas, it did not show significant difference between two cultures at high concentrated substrate. It was also observed same population density of microorganism by counting of microbes adhered to microbial media with an ultrasound treatment.

• 한국세라믹학회지
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• 제39권5호
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• pp.517-522
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• 2002

본 연구에서는 PVD 공정으로 Si 양자점 형성시 증착조건의 변화가 증착된 양자점 크기와 분포에 미치는 영향을 Monte Carlo법을 응용한 전산모사를 통하여 정량적으로 분석하였다. 전산모사시 PVD 공정에서 일반적으로 제어가 가능한 기판온도, 증착시간, 가스압력과 타겟-기판거리를 공정변수로 선택하였다. 계산 겨로가 증착속도가 0.05 nm/sec이고 기판온도 490${\circ}$, 증착시간 7 sec, 가스압력 3 mTorr, 타겟-기판거리가 8 cm일때 증착 밀도가 $1{\times}10^{12}cm^{-2}$인 Si 양자점 형성이 가능할 것으로 예측되었다.

• 한국표면공학회지
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• 제32권6호
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• pp.709-716
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• 1999

Ceramic is select for an alternative substrate material for high-speed circuits due to its low-thermal expansion. As, in this study, ceramic was prepared by ISG (interlayer sol-gel) process using metal salts and a metal alkoxide as the starting materials. Generally ceramic substrate is used electroless copper plating for the metallization. But it has been indicate weakely the adhesion strength between the substrate and copper layer. Therefore, this research, using the ISG process on the preparation of homogeneous and possible preparation at law temperature fabricated sol solution. Using of the dip coating method was coated for the purpose of giving the anchoring effect on the coating layer and enhancing the adhesion strength between the $Al_2$O$_3$ substrate and copper layer. This study examined primary the characteristic of the sol making condition and differential thermal analysis (DTA) X-ray diffraction (XRD) were mearsured to identify the crystal phase of heat treatment specimens. The morphology of the coated films were studied by scanning electron microscopy(SEM). As a resurt, XRD analysis was obtained patterns of $\alpha$-cordierite after heat-treatment about 2 hours at $1000^{\circ}C$. SEM analysis could have seen a large number of voids on coated film. The more contants of$ Al_2$$O_3$ Wt% was increased the more voids was advanced. Peel adhesion strength has a maximum in the contants of the TEOS:ANE of 1:0.7 mole%. In this case, adhesion strength has been measured 1150gf, peel adhesion strength were about 10 times more than uncoated of the ceramics film.

• 마이크로전자및패키징학회지
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• 제25권4호
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• pp.149-154
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• 2018

가로등 및 방폭등용 고출력 LED 조명 시스템의 광원으로서, 다수의 LED 칩이 실장된 50와트급 LED 어레이 모듈을 chip-on-board형 고방열 세라믹-메탈 하이브리드 기판을 사용하여 제작하였다. 고방열 세라믹-메탈 하이브리드 기판은 고열전도 알루미늄 금속 열확산 기판에 저온소결용 글라스-세라믹 절연 페이스트와 은 전극 페이스트를 후막 스크린 공정에 의해 도포한 다음, 건조 후 $515^{\circ}C$에서 동시소성하여 LED 칩을 실장할 세라믹 절연층과 은전극 회로층을 형성하여 제조하였다. 이 하이브리드 기판의 방열특성 평가를 위한 비교 샘플로서 기존의 에폭시 기반 FR-4 복합수지로 만든 써멀비아형 PCB 기판에도 동일한 디자인의 LED 어레이 모듈을 제작한 다음, 다중채널 온도측정장치와 열저항 측정기로 방열특성을 비교 분석하였다. 그 결과, $4{\times}9$ type LED 어레이 모듈에서 세라믹-메탈 하이브리드 기판의 열저항은 써멀비아형 FR-4 기판에 비하여 약 1/3로 나타났으며, 이것은 곧 방열성능이 적어도 3배 이상 높은 것으로 볼 수 있다.

• 한국세라믹학회지
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• 제20권3호
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• pp.199-204
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• 1983

An attempt was made to study wetting behavior of various low temperature molten frist on ceramic substrates including high alumina silicon carbide and porous fired clay plates by Sessile-drop method. The cosine values of contact angles between substrates and molten frist were linear as a function of temperature unless chemical reactions between substrate and molten frit occured. Addition of BaO to frit composition indicated that cosine of values of contact angles were gradually increased with increasing temperature but in the frist contained $Li_2O$ consine values were abruptly increased with increasing temperature after reached a certain temperature. The contact angle increased with increasing roughness of the substrate surface in case of alumina substrate plate.

• 한국재료학회지
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• 제17권2호
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• pp.121-123
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• 2007

Energy harvesting from the vibration through the piezoelectric effect has been studied for powering the wireless sensor node. As piezoelectric unimorph cantilever structure can transfer low vibration to large displacement, this structure was commonly deployed to harvest electric energy from vibrations. Piezoelectric unimorph structure was composed of small stiff piezoelectric ceramic on the large flexible substrate. As there is the large Young's modulus difference between the flexible substrate and stiff piezoelectric ceramic, flexible substrate could not homogeneously transfer the vibration to stiff piezoelectric ceramic. As a result, most piezoelectric ceramics had been broken at the certain point. We measured and analyzed the stress distribution on the piezoelectric ceramic on the cantilever.

• 한국세라믹학회지
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• 제32권5호
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• pp.601-607
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• 1995

The bond strength between the low-firing-substrate and Cu conductor depended on the softening point and the amount of frit added to the metal paste. The addition of 3 wt% frit (softening point: 68$0^{\circ}C$) to the metal paste resulted in the improvement of bond strength, which was approximately 3 times higher (3kg/$\textrm{mm}^2$) than that of non frit condition. It was also found that fracture surface shifted to the ceramic substrate in the interface region. These phenomena were attributed to the frit migration into the metal-ceramic interface. It was thought that the migration of glass frit occurred extensively when the softening point of glass firt was 68$0^{\circ}C$. The sheet resistance of Cu conductor remained constant by the addition of 4 wt% frit regardless of softening point of frit. For all samples with more than 4 wt% frit, the sheet resistance increased abruptly.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.303-303
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• 2007

Photo-imageable thick-film lithography technology was developed for the fabrication of embedded passives such as inductors and capacitors. In this study, photo-imageable dielectric and conductor pastes have apoted a negative type. Sodalime glass wafer, alumina substrate and zero-shrinkage LTCC green tapes were used as substrates. In result, The lithographic patterns were designed as lines and spaces for conductor material, or via-holes for ceramic, LTCC, materials. The scattering and reflection of UV-beam on the substrate had negative effects on fine patterning. The patterning performance was varied with the exposing and developing process conditions, and also varied with the substrate materials. Fine resolution of less then $50/50{\mu}m$ in line and space was obtained, which is difficult in screen printing method.

• 한국세라믹학회지
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• 제46권6호
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• pp.673-678
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• 2009

The effect of MgO buffer layer on the structural properties of sputter-grown ZnO thin film was investigated. Sapphire (0001) and Si (100) substrate were used for the growth and MgO buffer layer was inserted between ZnO thin film and the substrate. X-ray diffraction pattern indicated that enhanced crystallinity in the ZnO thin film grown was achieved by inserting very thin MgO buffer layer, regardless of the substrate type. The strain in the ZnO thin film could also be controlled by the insertion of the MgO buffer layer, and tendency of the strain was strongly dependent on the substrate type.