• Electrical & Electronic Materials
• /
• v.9 no.1
• /
• pp.67-75
• /
• 1996

This paper has presented the characteristics of thermoelectric devices and the plots of thermoelectric cooling and heating as a function of currents for different temperatures. The maximum cooling and heating(.DELTA.T) for (BiSb)$\_$2/Te$\_$3/ and Bi$\_$2/(TeSe)$\_$3/ as a function of currents is about 75.deg. C, A solderable ceramic insulated thermoelectric module. Each module contains 31 thermoelectric devices. Thermoelectric material is a quaternary alloy of bismuth, tellurium, selenium, and antimony with small amounts of suitable dopants, carefully processed to produce an oriented polycrystalline ingot with superior anisotropic thermoelectric properties. Metallized ceramic plates afford maximum electrical insulation and thermal conduction. Operating temperature range is from -156.deg. C to +104.deg. C. The amount of Peltier cooling is directly proportional to the current through the sample, and the temperature gradient at the thermoelectric materials junctions will depend on the system geometry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.1125-1128
• /
• 2004

This paper presents the temperature characteristics with structure of 18 kV lightning arresters for distribution. Three types of polymer arresters were fabricated and ceramic type arrester was also ready to investigate. Below $100^{\circ}C$, three types of polymer arresters exhibited almost the same leakage current value, but above $100^{\circ}C$, polymer arrester that arrester module was injected into polymer housing with grease exhibited the highest leakage current and the arrester with the lowest leakage current was the arrester that silicon rubber was directly injected to arrester module. The rising of leakage current of polymer arrester with grease was because of existing grease between FRP winding and silicon housing, and reducing the insulation characteristics of the grease. All polymer arresters exhibited the same temperature characteristics but ceramic typr arrester was slower than polymer arrester in heat emission despite lowest leakage current. It was thought that the air layer between ZnO varistor blocks and ceramic housing prevented the heat emission. However, in spite of the difference of the structure, the variation of the surface temperature of all arresters exhibited the same result.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2006.10a
• /
• pp.283-291
• /
• 2006

[ $\blacksquare$ ] Mega Trends $\blacksquare$ Ceramic Based Module -> PCB Based SiP $\blacksquare$ Mobile SiP decreases footprint more than 40% than discrete

• Proceedings of the Korean Ceranic Society Conference
• /
• 2003.04a
• /
• pp.188.1-188
• /
• 2003

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1997.10a
• /
• pp.21-21
• /
• 1997

• Proceedings of the Korean Ceranic Society Conference
• /
• 2003.10a
• /
• pp.47.1-47
• /
• 2003

• Journal of Sensor Science and Technology
• /
• v.28 no.5
• /
• pp.311-317
• /
• 2019

Rotating devices are commonly installed in power plants and factories. This study proposes a self-powered sensor node that is powered by converting the vibration energy of a rotating device into electrical energy. The self-powered sensor consists of a piezoelectric harvester for self-power generation, a rectifier circuit to rectify the AC signal, a sensor unit for measuring the vibration frequency, and a circuit to control the light emitting diode (LED) lighting. The frequency of the vibration source was measured using a piezoelectric-cantilever-type vibration frequency sensor. A green LED was illuminated when the measured frequency was within the normal range. The power generated by the piezoelectric harvester was determined, and the LED operation was assessed in terms of the vibration frequency. The piezoelectric harvester was found to generate a power of 3.061 mW or greater at a vibration acceleration of 1.2 g ($1g=9.8m/s^2$) and vibration frequencies between 117 and 123 Hz. Notably, the power generated was 4.099 mW at 122 Hz. As such, our self-powered sensor node can be used as a module for monitoring rotating devices, because it can convert vibration energy into electrical energy when installed on rotating devices such as air compressors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.12
• /
• pp.961-968
• /
• 2012

In this study, we have investigated the effects of Mn and Co co-doping on defects, J-E curves and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. Admittance spectra and dielectric functions show two bulk defects of $Zn_i^{{\cdot}{\cdot}}$ (0.17~0.18 eV) and $V_o^{\cdot}$ (0.30~0.33 eV). From J-E characteristics the nonlinear coefficient (${\alpha}$) and resistivity (${\rho}_{gb}$) of pre-breakdown region decreased as 30 to 24 and 5.1 to 0.08 $G{\Omega}cm$ with sintering temperature, respectively. The double Schottky barrier of grain boundaries in ZB(MCo) ($ZnO-Bi_2O_3-Mn_3O_4-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.64 eV at lower temperature to 1.06 eV at higher temperature. It was revealed that a co-doping of Mn and Co in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against an ambient temperature (${\alpha}$-factor= 0.136).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.310-310
• /
• 2007

Mg-Si-O계 세라믹스에 glass frit 조성을 첨가하여 저온에서의 소결 특성 및 마이크로파 유전 특성을 연구하였다. 기존의 Mg-Si-O계 세라믹스는 우수한 유전특성을 가지고 있으나 높은 소결온도로 인하여 LTCC용 기판 소재로 적용이 어려웠다. 본 연구에서는 MgO, $SiO_2$를 이용하여 $Mg_2SiO_4$을 합성한 후, $B_2O_3-ZnO-Na_2O-SiO_2-Al_2O_3$계 glass 조성을 20~40wt%로 첨가하여 소결온도를 감소시켜 LTCC 기판 소재로서의 적용성을 고찰하였다. glass frit 함량이 증가함에 따라 밀도($g/cm^3$) 및 유전율(${\varepsilon}_r$)은 증가하였고 품질계수($Qxf_0$)값은 감소하였다. glass frit 함량이 40wt%일때 $900^{\circ}C$에서 1시간 소결한 소결체의 유전톡성은 유전율 (${\varepsilon}_4$) = 6.5. 품질계수 ($Qxf_0$) = 4,000(GHz), 온도계수 $(\tau_t)\;=\;{\pm}\;10ppm/^{\circ}C$로 우수한 특성을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.710-713
• /
• 2004

The design, simulation, modeling and measurement of a low temperature co-fired ceramic (LTCC) RF switch module for GSM applications is presented in this paper. RF switch module is constructed using a Rx/Tx switching circuit and integrated low pass filter. The low pass filter function was designed to operate in th GSM band. Insertion and return loss of the low pass filter were designed less than 0.3 dB and better than 12.7 dB at 900 MHz. The RF switch module contained 10 embedded passives and 3 surface mount components integrated on $4.6{\times}4.8{\times}1.2$ nm, 6-layer multi-layer integrated circuit. The insertion loss of switch module was measured at 900 MHz was 11 dB.