• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.163-164
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• 2002

This paper describes a new carbon film that afford superlubricity (i.e, friction coefficients of 0.001- 0.005) and superlow wear rates (i.e., $10^{-11}-10^{-10}mm^3/N.m$) to sliding metallic and ceramic surfaces, when tested in inert test environments. The wear life of these films are more than 1000 km even under very high contact pressures (i.e., 1-3 GPa) and at a wide range of sliding velocities (i.e., 0.1 to 2 m/s). They are produced in a plasma enhanced chemical vapor deposition system at room temperature using highly hydrogenated gas discharge plasmas. Extensive research has shown that films grown in highly hydrogenated gas discharge plasmas (i.e., hydrogen-to-carbon ratio of 6 and above) provide superlow friction and wear coefficients. In full paper, specific conditions under which superlubricity can be achieved in carbon films will be discussed.and a mechanistic model will be proposed to explain the superlubricity of new carbon films.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.33.1-35
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• 2000

Na-K-Nb system showed a number of ferroelectric phases in bulk ceramic. [001]-axis oriented single-phase $Na_{0.5}/K_{0.5}NbO_3$(NKN) thin film have been grown on $LaA1O_3$substrates using KrF excimer laser. X-ray diffraction $\theta$-2$\theta$ scan, rocking curves, and $\varphi$ scan data evidence highly c-axis oriented along the [001] direction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.291-294
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• 1998

The objective of this study is to deposited the preparation of STO dielectric thin films on Ag/barrier-mater/Si(N-type 100) bottom electrode using a conventional rf-magnetron sputtering technique with a ceramic target under various conditions. It is demonstrated that the leakage current of films are strongly dependent on the atmosphere during deposition and the substrate temperature. The resistivity properties of films deposited on silicon substrates were very high resistivity. Capacitance of the films properties were the highest value(1000pF) and dependent on substrate temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.2
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• pp.109-115
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• 2006

Indium tin oxide (ITO) films have been prepared by DC magnetron sputtering. In order to improve the utilization efficiency of the target and reduce the cost of the film deposition processes, the powder target was used instead of the conventional ceramic target. As-deposited films were annealed at temperatures between $200^{\circ}C$ and $500^{\circ}C$ for 30 min in air. Also, the film was annealed in various atmospheres such as air, $O_2,\;H_2,\;N_2$, and vacuum at $400^{\circ}C$C for 30 min. Effects of the heat treatment conditions on structural, electrical, and optical properties of ITO films were investigated. The annealing temperature of $400^{\circ}C$ and atmospheres of $H_2$ and $N_2$ seem to be the most suitable conditions for post processing.

• Proceedings of the Membrane Society of Korea Conference
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• 2002.05a
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• pp.35-41
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• 2002

Dense oxygen ionic conducting materials can be used for oxygen separation membranes at high temperatures. However, they show relatively low permeation flux because of their large resistances. To reduce resistances and improve the oxygen permeation flux, thin dense yttria-stabilized-zirconia (YSZ)/Pd composite dual-phase membranes were fabricated by a new approach that combines the reservoir method and chemical vapor deposition (CVD). A thin porous YSZ layer was coated on a porous alumina support by dip-coating the YSZ suspension. A continuous Pd phase was formed inside pores of the YSZ layer by the reservoir method. The residual pores of the YSZ/Pd layer were plugged with yttria/zirconia by CVD to ensure the gas tightness of the membranes. The oxygen permeation fluxes through these composite membrane were 2.0$\times$10$^{-8}$ mol/cm$^2$.s and 4.8$\times$10$^{-8}$ mol/cm$^2$.s at 105$0^{\circ}C$ when air and oxygen were used as the permeate gases, respectively. These oxygen permeation values are about 1 order of magnitude higher than those of pure YSZ membranes prepared under similar conditions.

• The Korean Journal of Ceramics
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• v.7 no.2
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• pp.85-92
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• 2001

Thin films of ZnO and Al doped ZnO were prepared by rf magnetron sputter techniques. When the oxygen fraction in Ar-O$_2$ sputter gas was about 2.0%, the films exhibited the composition of Zn:O=1.05:1. The films prepared at 250 W contain larger grains than the films grown at 100 W. However, high deposition rate seems to deteriorates the crystallinity as well as Al-substitution, resulting in lower concentration of mobile electrons. The Al-doped ZnO films which were deposited at $500^{\circ}C$ show resistance of 1$\times$10$^-2$ Wcm; optical band gap of the films ranges from 3.25 to 3.40 eV. These electrical and optical features are related with microstructural as well as crystalline characteristics of the films.

• The Korean Journal of Ceramics
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• v.6 no.1
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• pp.68-73
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• 2000

The effects of oxygen annealing on the carbon content in MgO thin films were investigated, MgO thin films were deposited on Si(100) substrate at different temperatures of 400 to $700^{\circ}C$ and different deposition rates of 3.4 to 11.6$\AA$/min. Using rf magnetron sputtering method. Carbon content change on the surface of MgO thin films with the oxygen annealing at different temperatures was investigated using various method. The carbon content decreased as the annealing temperature increased. $Pb(Zr_{0.53}Ti_{0.47})O_3$(PZT) thin films were deposited on the MgO/Si(100) substrates. The effects of carbon content on the phase formation and the electrical properties of PZT thin films were also investigated.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.161.1-161
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• 2000

• Korean Membrane Journal
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• v.7 no.1
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• pp.42-50
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• 2005

Among ceramic membranes developed to date, amorphous silica membranes are attractive for gas separation at elevated temperatures. Most of the silica membranes can be formed on a porous support by sol-gel or chemical vapor deposition (CVD) process. To improve gas permselectivity of the membrane, well-controlled pores having desired size and chemical affinity between permeates and membrane become important factors in the preparation of membranes. In this article, we review the literature and introduce our technologies on the microstructure to be solved and pore size control of silica membranes using sol-gel and CVD methods.

• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.18-20
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• 1997

The fabrication process of silicon-diamond(SOD) structure wafer were studied. Microwave plasma chemical vapor deposition (MWPCVD) and annealing technology were used to synthesize diamond film with high resistivity and thermal conductivity. Bonding and etchback silicon-on-diamond (BESOD) were utilized to form supporting substrate and single silicon thin layer of SOD wafer. At last, a SOD structure wafer with 0.3~1$\mu\textrm{m}$ silicon film and 2$\mu\textrm{m}$ diamond film was prepared. The characteristics of radiation for a CMOS integrated circuit (IC) fabricated by SOD wafer were studied.