• 제목/요약/키워드: Ceramic deposition

검색결과 735건 처리시간 0.026초

열처리 방법에 따른 세라믹 박막의 AFM 및 C-F 특성 (AFM and C-F Properties of Ceramic Thin Film with Annealing Method)

  • 최운식
    • 한국전기전자재료학회논문지
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    • 제28권9호
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    • pp.598-601
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    • 2015
  • The $Sr_{0.7}Bi_{2.3}Nb_2O_9(SBN)$ thin films are deposited on Pt electrode($Pt/Ti/SiO_2/Si$) using RF sputtering method at various deposition temperature. The deposition temperature of optimum was $300^{\circ}C$. SBN thin films were annealed at $500{\sim}700^{\circ}C$ using furnace and RTA, respectively. The surface roughness showed about 2.42 nm in annealing temperature($600^{\circ}C$) of furnace. The capacitance density of SBN thin films were increased with the increase of annealing temperature. The maximum capacitance density of $0.7{\mu}F/cm^2$ was obtained by annealing temperature($700^{\circ}C$). The frequency dependence of dielectric loss showed about 0.03 in frequency ranges of 1~1,000 kHz.

Investigation of Some Hard Coatings Synthesized by Ion Beam Assisted Deposition

  • He, Jian-Li;Li, Wen-Zhi;He, Xial-Ming;Liu, Chang-Hong
    • 한국진공학회지
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    • 제4권S2호
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    • pp.163-169
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    • 1995
  • Ion beam assisted deposition(IBAD) technique was used to synthesize hard coatings including diamond-like carbon(DLC), carbon nitride(CN) and metal-ceramic multilayered films. It was found that DLC films formed at low energy ion bombardment possess more $Sp^3$ bonds and much higher hardness. The films exhibited an excellent wear resistance. Nanometer multialyered Fe/TiC films was deposited by ion beam sputtering. The structure and properties were strongly dependent on the thickness of the individual layers and modulation wave length. It was disclosed that both hardness and toughness of the films could be enhanced by adjusting the deposition parameters. The CN films synthesized by IBAD method consisted of tiny crystallites dispersed in amorphous matrix, which were identified by electron diffraction pattern to be $\beta -C_3N_4$.

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비시안 무전해 Au 도금의 석출거동에 미치는 하지층 무전해 Ni-P 도금 조건의 영향 (Effect of underlayer electroless Ni-P plating on deposition behavior of cyanide-free electroless Au plating)

  • 김동현;한재호
    • 한국표면공학회지
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    • 제55권5호
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    • pp.299-307
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    • 2022
  • Gold plating is used as a coating of connector in printed circuit boards, ceramic integrated circuit packages, semiconductor devices and so on, because the film has excellent electric conductivity, solderability and chemical properties such as durability to acid and other chemicals. In most cases, internal connection between device and package and external terminals for connecting packaging and printed circuit board are electroless Ni-P plating followed by immersion Au plating (ENIG) to ensure connection reliability. The deposition behavior and film properties of electroless Au plating are affected by P content, grain size and mixed impurity components in the electroless Ni-P alloy film used as the underlayer plating. In this study, the correlation between electroless nickel plating used as a underlayer layer and cyanide-free electroless Au plating using thiomalic acid as a complexing agent and aminoethanethiol as a reducing agent was investigated.