• 한국응용과학기술학회지
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• 제30권3호
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• pp.423-430
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• 2013

Carbon coils could be synthesized using $C_2H_2/H_2$ as source gases and $SF_6$ as an incorporated additive gas under thermal chemical vapor deposition (CVD) system. Prior to the carbon coils deposition reaction, two kinds of samples having different combination of Ni catalyst and substrate were employed, namely, a commercially-made $Al_2O_3$ ceramic boat with Ni powders and a commercially-made $Al_2O_3$ substrate with Ni layer. By using a commercially-made $Al_2O_3$ ceramic boat, the synthesis of carbon coils could be enhanced as much as 10 times higher than that of $Al_2O_3$ substrate. Furthermore, the dominant formation of the microsized carbon coils could be obtained by using $Al_2O_3$ ceramic boat. The surface roughness of the supporting substrate of $Al_2O_3$ ceramic boat was understood to be associated with the large scale synthesis of carbon coils as well as the dominant formation of the larger-sized, namely the microsized carbon coils.

• 한국수소및신에너지학회논문집
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• 제21권2호
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• pp.117-122
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• 2010

BCY($Ba(Ce_{0.9}Y_{0.1})O_{3-\delta}$) oxide, shows high protonic conductivity at high temperatures, and are referred to as hydrogen separation membrane. For high efficiency of hydrogen separation ($H_2$ flux and selectivity) and low fabrication cost, ultimate thin and dense BCY-Ni layer have to be coated on a porous substrate such as $ZrO_2$. Aerosol depostion (AD) process is a novel technique to grow ceramic film with high density and nano-crystal structure at room-temperature, and would be applied to the fabrication process of AD integration ceramic layer effectively. XRD and SEM measurements were conducted in order to analyze the characteristics of BCY-Ni membrane fabricated by AD process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.170-170
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• 2009

aerosol deposition method(ADM)은 에어로졸화 된 고상의 원료분말을 노즐을 통해 분사시켜 소결과정을 거치지 않고도 상온에서 고밀도 후막을 제조할 수 있으며, 세라믹, 고분자, 금속 등의 다양한 코팅이 가능하다. 본 연구에서는 ADM들 이용하여 세라믹 후막 및 세라믹-폴리머 복합체 후막을 제조하였고 60 mm 노즐을 이용하여 대면적 세라믹 후막 성장도 시도되었다. 세라믹 후막의 원료로는 낮은 유전율과 우수한 품질계수를 갖는 $Al_2O_3$ 분말과 AlN의 분말이 사용되었으며, 세라믹에 비하여 높은 탄성과 1,500~2,000의 품질계수를 갖는 테프론(teflon) 분말이 세라믹과의 복합체 후막성장에 사용되었다. 세라믹-폴리머 복합체의 경우, 폴리머의 함유량에 따라 후막 내부의 결정립 크기가 20 때의 평균 결정립을 갚는 세라믹 후막에 비해 최대 10배 정도까지 증가하는 것을 확인할 수 있었으며, 이에 따라 후막에서의 유전특성 및 전기적인 특성, 열전도도, 투과율이 크게 변화하는 것을 확인할 수 있었다. 본 연구에서는 이러한 물성 변화에 대한 원인 고찰을 위하여 후막의 미세구조 및 화학조성 등에 다양한 분석이 이루어졌으며, 상온에서 성막되는 후막의 고분자 기판으로의 응용을 위한 최적의 공정조건을 제시하고자 한다.

• 한국분말재료학회지
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• 제27권3호
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• pp.219-225
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• 2020

The directed energy deposition (DED) process of metal 3D printing technologies has been treated as an effective method for welding, repairing, and even 3-dimensional building of machinery parts. In this study, stainless steel 316L (STS316L) and Inconel 625 (IN625) alloy powders are additively manufactured using the DED process, and the microstructure of the fabricated STS316L/IN625 sample is investigated. In particular, there are no secondary phases in the interface between STS316L and the IN625 alloy. The EDS and Vickers hardness results clearly show compositionally and mechanically transient layers a few tens of micrometers in thickness. Interestingly, several cracks are only observed in the STS 316L rather than in the IN625 alloy near the interface. In addition, small-sized voids 200-400 nm in diameter that look like trapped pores are present in both materials. The cracks present near the interface are formed by tensile stress in STS316L caused by the difference in the CTE (coefficient of thermal expansion) between the two materials during the DED process. These results can provide fundamental information for the fabrication of machinery parts that require joining of two materials, such as valves.

• 한국전기전자재료학회논문지
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• 제36권1호
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• pp.74-80
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• 2023

Gallium oxide (Ga₂O₃) thin films were grown on c-, a-, m-, r-plane sapphire substrates using a mist chemical vapor deposition system. Various growth temperature range of 400~600℃ was applied for Ga₂O₃ thin film deposition. Then, several structural properties were characterized such as film thickness, crystal phase, lattice orientation, surface roughness, and optical bandgap. Under the certain growth temperature of 500℃, all grown Ga₂O₃ featured rhombohedral crystal structures and well-aligned preferred orientation to sapphire substrate. The films grown on c-and r-plane sapphire substrates, showed low surface roughness and large optical bandgap compared to those on a-and m-plane substrates. Therefore, various sapphire orientation can be potentially applicable for future Ga₂O₃-based electronics applications.

• 세라미스트
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• 제3권1호
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• pp.60-68
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• 2000

• 세라미스트
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• 제3권1호
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• pp.34-39
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• 2000

• 한국수소및신에너지학회논문집
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• 제21권5호
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• pp.375-382
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• 2010

A layered perovskite photocatalysts, $SrBi_2Nb_2O_9$ (SBN), was synthesized by the conventional solid-state reaction method and characterized by X-ray diffraction (XRD) and UV-visble spectrophotometry. The results showed that the structure of $SrBi_2Nb_2O_9$ is orthorhombic. Diffuse reflectance spectra for calcined and attrition-milled SBN showed the main absorption edges were less 400 nm, that is ultraviolet region. SBN under micron-sized powder was deposited on the $Al_2O_3$ by room temperature powder spray in vacuum process, so called aerosol deposition (AD), and nano-grained $SrBi_2Nb_2O_9$ photocatalytic thick film was fabricated. AD-deposited SBN thick films were characterized by XRD, scanning electron microscopy (SEM) and UV-visable spectrophotometry, Moreover, it was found that several nano-sized SBN film by AD process can improve the photocatalytic activity under visable reflectance.

• 한국세라믹학회지
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• 제39권6호
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• pp.594-597
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• 2002

플라즈마 화학기상증착(PECVD)법을 이용하여 p-type Si(100) 웨이퍼에 Silicon Oxynitride(SiON) 후막을 SiH$_4$ , $N_2$O, $N_2$ 가스를 혼합하여 증착하였다. Prism coupler측정을 통해 SiON 후막의 굴절률 1.4620~1.5312을 얻었으며, rf power가 180 W에서 5.92$\mu$m/h의 증착률을 나타내었다. 증착변수에 따른 화학적 조성의 영향은 X-ray Photoelectron Spectroscopy(XPS) 을 통하여 관찰하였다. 또한, SiON 후막 증착후에 $1.5\mu$m 부근의 흡수띠를 제거하기 위해 105$0^{\circ}C$의 $N_2$ 분위기에서 2시간 동안 열처리를 행하였다.

• 한국세라믹학회지
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• 제36권9호
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• pp.901-908
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• 1999

Effects of LPMOCVD process parameters on the properties of TiO2 thin film were investigated. Depositions were made in the range of temperature 300-67$0^{\circ}C$ with various TTIP(Titanium Tetraisopropoxide) concentrations by contrlling bubbler temperature(40-8$0^{\circ}C$) and/or flow rate(30-90 sccm). Post annealing treatments were carried out at 500-80$0^{\circ}C$ range in the air. Films deposited at 40$0^{\circ}C$ have denser morphology than those of films deposited at 50$0^{\circ}C$ and $600^{\circ}C$ due to slower deposition rate. Bubbler temperature can affect on the deposition rate in mass transfer controlled regime such as 50$0^{\circ}C$ or higher but not below 50$0^{\circ}C$ where surface reaction rate becomes important. On the contrary for films deposited above 50$0^{\circ}C$ flow rate can raise deposition rate but eventually saturate it at the 50 sccm and above due to retarded adhesion of decomposed species. But for films deposited at 40$0^{\circ}C$ deposition rate increases stadily with flow rate. As the film becomes more porous A(200) texture can not be developed and AnataselongrightarrowRutile transition kinetics increases.