• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.764-774
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• 1998

• Journal of the Korean Ceramic Society
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• v.36 no.5
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• pp.521-530
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• 1999

• Journal of the Korean Ceramic Society
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• v.50 no.1
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• pp.43-49
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• 2013

${\beta}$-SiC was deposited onto a graphite substrate by a LPCVD method and the effect of the crystallographic orientation on mechanical properties of the deposited SiC was investigated. The deposition was performed at $1300^{\circ}C$ in a cylindrical hot-wall LPCVD system by varying the deposition pressure and total flow rate. The texture and crystallographic orientation of the SiC were evaluated by XRD. The deposition rate increased linearly with the gas flow rate from 800 sccm to 1600 sccm. It also increased with the pressure but became saturated above a total pressure of 3.3 kPa. In the range of 3.3 - 10 kPa, the preferred orientation changed from the (220) and (311) planes to the (111) plane. The hardness and elastic modulus showed maximum values when the SiC had the (111) preferred orientation, though it gradually decreased upon a change to the (220) and (311) preferred orientations.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.969-973
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• 2012

AlN thin films were deposited on p-type Si(100) substrates by RF magnetron sputtering method. This study showed the change of the preferential orientation of AlN thin films deposition with the change of the deposition conditions such as sputtering pressure and Ar/N2 gas ratio in chamber. It was identified by X-ray diffraction patterns that AlN thin film deposited at low sputtering pressure has a (002) orientation, however its preferred orientation was changed from the (002) to the (100) orientation with increasing sputtering pressure. Also, it was observed that the properties of AlN thin films such as thickness, grain size and surface roughness were largely dependent on Ar/$N_2$ gas ratio and a high quality thin film could be prepared at lower nitrogen concentration. AlN thin films were investigated relationship between preferential orientation and deposition condition by using XRD, FE-SEM and PFM.

• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.733-739
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• 1998

C-axis oriented zinc oxide thin films were deposited on Cornign 1737 glass substrate by an rf magnetron sputtering technique. The effects of deposition parameters and post heat-treatment on the crystallinity and electical properties of ZnO films were investigaed. As-deposited ZnO films showed the strong c-axis growth and excellent crystallinity under the deposition conditions as follows: substrate temperature 350$^{\circ}C$ ; growth and excellent crystallinity under the deposition conditions as follows ; substrate temperature 350$^{\circ}C$ rf power 75W ; gas pressure 6m Torr; percentage of oxygen 50% The higher heat-treating temperatue was the stronger c-axis growth and the better crystallinity of the deposited ZnO films were. The resistivity of ZnO films was significantly affected by deposition parameters and post heat-treatment. With increasing increased. After post heat-treating at 400$^{\circ}C$ in air the resistivity of ZnO films increased but post heat-treat-ing temperature 500$^{\circ}C$ rather diminished the film resistivity.

• Journal of the Korean Ceramic Society
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• v.38 no.6
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• pp.531-536
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• 2001

SiCl$_4$/CH$_4$/H$_2$계를 사용한 플라즈마 화학증착법(PECVD)으로 실리콘(100) 기판 위에 3C-SiC막을 117$0^{\circ}C$~1335$^{\circ}C$의 온도범위에서 증착하였다. 증착온도, 유입가스비, R$_{x}$ [=CH$_4$/(CH$_4$+H$_2$)], 그리고 r.f. power를 변화시켜 증착막의 결정성에 대해 검토하였다. Thermal CVD에 비해 PECVD법은 박막의 증착속도를 향상시켰다. 증착된 3C-SiC은 (111) 면으로 최대의 우선배향성을 지님을 알 수 있었다. 실리콘 기판 위의 3C-SiC막의 결정성은 R$_{x}$값에 의존하였으며, R$_{x}$가 감소할수록 결정성이 더욱 향상되었다. Free Si가 3C-SiC막과 함께 증착되었으나, 증착온도와 r.f power가 증가함에 따라 free Si의 함량은 감소하였다. 증착온도 127$0^{\circ}C$, 유입가스비 R$_{x}$=0.04, r.f. power가 60W에서 비교적 결정성을 가진 3C-SiC막을 얻을 수 있었다.

• Journal of the Korean Ceramic Society
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• v.40 no.12
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• pp.1154-1158
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• 2003

Hydrothermal deposition of hydroxyapatite coatings on $Al_2$O$_3$ substrates was studied using aqueous solutions of Ca(NO$_3$)$_2$ㆍ4$H_2O$ and (NH$_4$)$_2$HPO$_4$ containing EDTA disodium salt as a chelating agent for $Ca^{2+}$. For the precipitation of the coatings the EDTA-Ca$^{2+}$ chelates were dissociated thermally at 20$0^{\circ}C$ or decomposed by oxidation with $H_2O$$_2$ at 9$0^{\circ}C$. Scanning electron microscopy and X-ray diffraction were used to investigate the deposition behavior and the phase of the coatings. Hydroxyapatite coatings were not deposited with the thermal dissociation method, whereas uniform deposition of the coatings (about 0.7 $\mu\textrm{m}$ thickness) was obtained with the oxidative decomposition method. The coatings consisted of fine rod-like hydroxyapatite crystals (hexagonal structure) with 60-80 nm diameters, having some preferred orientation with their length (i.e., the c axis) perpendicular to the substrate.ate.

• Journal of the Korean Ceramic Society
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• v.45 no.12
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• pp.796-801
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• 2008

$LaGaO_3$ thin film was prepared on Ni-Fe metal porous substrate by Pulsed Laser Deposition method. By the thermal reduction, the dense $NiO-{Fe_3}{O_4}$ substrate is changed to a porous Ni-Fe metal substrate. The volumetric shrinkage and porosity of the substrate are controlled by the reduction temperature. It was found that a thermal expansion property of the Ni-Fe porous metal substrate is almost the same with that of $LaGaO_3$ based oxide. $LaGaO_3$ based electrolyte films are prepared by the pulsed laser deposition (PLD) method. The film composition is sensitively affected by the deposition temperature. The obtained film is amorphous state after deposition. After post annealing at 1073K in air, the single phase of $LaGaO_3$ perovskite was obtained. Since the thermal expansion coefficient of the film is almost the same with that of LSGM film, the obtained metal support LSGM film cell shows the high tolerance against a thermal shock and after 6 min startup from room temperature, the cell shows the almost theoretical open circuit potential.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.173-176
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• 1997

Direct metal ion beam deposition is considered to be a whole new thin film deposition technique. Unlike other conventional thin film deposition processes, the individual deposition particles carry its own ion beam energies which are directly coupled for the formation of this films. Due to the nature of ion beams, the energies can be controlled precisely and eventually can be tuned for optimizing the process. SKION's negative C- ion beam source is used to investigate the initial nucleation mechanism and growth. Strong C- ion beam energy dependence has been observed. Complete phase control of sp3 and sp3, control of the C/SiC/Si interface layer, control of crystalline and amorphous mode growth, and optimization of the physical properties for corresponding applications can be achieved.

• Journal of the Korean Ceramic Society
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• v.49 no.1
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• pp.78-83
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• 2012

The electrophoretic deposition(EPD) of ZnO nano-sized colloids is investigated by changing the colloid number concentration, applied force, and deposition time. The change of the colloid size in a suspension was examined by the different colloid number concentrations (N = $3.98{\times}10^{15}$, N = $3.98{\times}10^{14}$, and N = $3.98{\times}10^{13}$) with an increase of the deposition time and applied forces. Deposition behavior was investigated by changing the applied fields (from DC 5 V to 50 V) and the deposition time (5 min to 25 min). The surface microstructures of the as-deposited films were investigated by SEM. The dried films were sintered from $850^{\circ}C$ to $1,050^{\circ}C$ for 2 h and then the microstructures were also explored by SEM. The agglomeration rate was enhanced by increasing the colloid number concentration of colloids. Colloid number concentration in a suspension must be rapidly decreased at higher values of the electric field. ZnO nano-sized colloids had the highest zeta potential value of over -28 mV in methanol. A homogeneous microstructure was obtained at colloid number concentration of N = $3.98{\times}10^{13}$, applied DC field of 5 V/cm and 15 min of deposition time at an electrode distance of 1.5 cm. Under these conditions, the deposited films were sintered at $850^{\circ}C$ and $1,050^{\circ}C$ for 2 h. The results show a typical pore-free surface morphology of a uniform thickness of 400 nm under these experimental conditions.