• Title/Summary/Keyword: Cell Defect

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Defect Cell Extraction for TFT-LCD Auto-Repair System (TFT-LCD 자동 수선시스템에서 결함이 있는 셀을 자동으로 추출하는 방법)

  • Cho, Jae-Soo;Ha, Gwang-Sung;Lee, Jin-Wook;Kim, Dong-Hyun;Jeon, Edward
    • Journal of Institute of Control, Robotics and Systems
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    • v.14 no.5
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    • pp.432-437
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    • 2008
  • This paper proposes a defect cell extraction algorithm for TFT-LCD auto-repair system. Auto defect search algorithm and automatic defect cell extraction method are very important for TFT-LCD auto repair system. In the previous literature[1], we proposed an automatic visual inspection algorithm of TFT-LCD. Based on the inspected information(defect size and defect axis, if defect exists) by the automatic search algorithm, defect cells should be extracted from the input image for the auto repair system. For automatic extraction of defect cells, we used a novel block matching algorithm and a simple filtering process in order to find a given reference point in the LCD cell. The proposed defect cell extraction algorithm can be used in all kinds of TFT-LCD devices by changing a stored template which includes a given reference point. Various experimental results show the effectiveness of the proposed method.

Influence of defective sites in Pt/C catalysts on the anode of direct methanol fuel cell and their role in CO poisoning: a first-principles study

  • Kwon, Soonchul;Lee, Seung Geol
    • Carbon letters
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    • v.16 no.3
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    • pp.198-202
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    • 2015
  • Carbon-supported Pt catalyst systems containing defect adsorption sites on the anode of direct methanol fuel cells were investigated, to elucidate the mechanisms of H2 dissociation and carbon monoxide (CO) poisoning. Density functional theory calculations were carried out to determine the effect of defect sites located neighboring to or distant from the Pt catalyst on H2 and CO adsorption properties, based on electronic properties such as adsorption energy and electronic band gap. Interestingly, the presence of neighboring defect sites led to a reduction of H2 dissociation and CO poisoning due to atomic Pt filling the defect sites. At distant sites, H2 dissociation was active on Pt, but CO filled the defect sites to form carbon π-π bonds, thus enhancing the oxidation of the carbon surface. It should be noted that defect sites can cause CO poisoning, thereby deactivating the anode gradually.

Characteristics of Ultra High Frequency Partial Discharge Signals of Turn to Turn Defect in Transformer Oil (절연유 내 변압기 Turn간 결함에 의한 부분방전의 극초단파 전자기파 신호 특성)

  • Yoon, Jin-Yul;Ju, Hyung-Jun;Goo, Sun-Geun;Park, Ki-Jun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.10
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    • pp.2000-2004
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    • 2009
  • In general, for the condition monitoring of a power transformer using the UHF PD measuring technique, detection of any partial discharge, identifying the defect in the transformer and locating the insulation defect are necessary. In this paper one of the most frequent detects which can result in turn to turn fault in power transformer was examined for identifying the defect. In order to model the defect, as a discharge source, a partial discharge cell was used for experimental activity. Magnitude of electromagnetic wave signals and corresponding amount of apparent discharge were measured simultaneously against phase of applied voltage to the discharge cell. Frequency range and phase resolved partial discharge signals were measured and analyzed. The results will be contributed to build the defect database of power transformer and to decrease the occurrence of transformer faults.

'Warm-up' of a ${\pi}-cell$ Liquid Crystal Device

  • Lee, Gi-Dong;Bos, Philip J.;Ahn, Seon-Hong;Lee, Kun-Jong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.1096-1100
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    • 2003
  • A fast Q-tensor method, which can model the defect dynamics in a liquid crystal director field is presented. The method is used to model the defect dynamics occurring during the "warm-up" of a ${\pi}-cell$ device.

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Effects of reversible metastable defect induced by illumination on Cu(In,Ga)Se2 solar cell with CBD-ZnS buffer layer

  • Lee, Woo-Jung;Yu, Hye-Jung;Cho, Dae-Hyung;Wi, Jae-Hyung;Han, Won-Seok;Yoo, Jisu;Yi, Yeonjin;Song, Jung-Hoon;Chung, Yong-Duck
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.431-431
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    • 2016
  • Typical Cu(In,Ga)Se2 (CIGS)-based solar cells have a buffer layer between CIGS absorber layer and transparent ZnO front electrode, which plays an important role in improving the cell performance. Among various buffer materials, chemical bath deposition (CBD)-ZnS is being steadily studied to alternative to conventional CdS and the efficiency of CBD-ZnS/CIGS solar cell shows the comparable values with that of CdS/CIGS solar cell. The intriguing thing is that reversible changes occur after exposure to illumination due to the metastable defect states in completed ZnS/CIGS solar cell, which induces an improvement of solar cell performance. Thus, it implies that the understanding of metastable defects in CBD-ZnS/CIGS solar cell is important issue. In this study, we fabricate the ITO/i-ZnO/CBD-ZnS/CIGS/Mo/SLG solar cells by controlling the NH4OH mole concentration (from 2 M to 3.5 M) of CBD-ZnS buffer layer and observe their conversion efficiency with and without light soaking for 1 hr. From the results, NH4OH mole concentration and light exposure can significantly affect the CBD-ZnS/CIGS solar cell performance. In order to investigate that which layer can contain metastable defect states to influence on solar cell performance, impedance spectroscopy and capacitance profiling technique with exposure to illumination have been applied to CBD-ZnS/CIGS solar cell. These techniques give a very useful information on the density of states within the bandgap of CIGS, free carriers density, and light-induced metastable effects. Here, we present the rearranged charge distribution after exposure to illumination and suggest the origin of the metastable defect states in CBD-ZnS/CIGS solar cell.

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A Study on Shape Warpage Defect Detecion Model of Scaffold Using Deep Learning Based CNN (CNN 기반 딥러닝을 이용한 인공지지체의 외형 변형 불량 검출 모델에 관한 연구)

  • Lee, Song-Yeon;Huh, Yong Jeong
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.1
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    • pp.99-103
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    • 2021
  • Warpage defect detecting of scaffold is very important in biosensor production. Because warpaged scaffold cause problem in cell culture. Currently, there is no detection equipment to warpaged scaffold. In this paper, we produced detection model for shape warpage detection using deep learning based CNN. We confirmed the shape of the scaffold that is widely used in cell culture. We produced scaffold specimens, which are widely used in biosensor fabrications. Then, the scaffold specimens were photographed to collect image data necessary for model manufacturing. We produced the detecting model of scaffold warpage defect using Densenet among CNN models. We evaluated the accuracy of the defect detection model with mAP, which evaluates the detection accuracy of deep learning. As a result of model evaluating, it was confirmed that the defect detection accuracy of the scaffold was more than 95%.

Improving Device Efficiency for n-i-p Type Solar Cells with Various Optimized Active Layers

  • Iftiquar, Sk Md;Yi, Junsin
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.2
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    • pp.70-73
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    • 2017
  • We investigated n-i-p type single junction hydrogenated amorphous silicon oxide solar cells. These cells were without front surface texture or back reflector. Maximum power point efficiency of these cells showed that an optimized device structure is needed to get the best device output. This depends on the thickness and defect density ($N_d$) of the active layer. A typical 10% photovoltaic device conversion efficiency was obtained with a $N_d=8.86{\times}10^{15}cm^{-3}$ defect density and 630 nm active layer thickness. Our investigation suggests a correlation between defect density and active layer thickness to device efficiency. We found that amorphous silicon solar cell efficiency can be improved to well above 10%.

The study on cell Vth distibution induced by heavily doped channel ionn and Si-SiN stress in flash memory cell (과도한 채널 이온 주입 농도 및 Si-SiN 스트레스가 플래쉬 메모리셀 산포에 미치는 영향)

  • Lee Chi-Kyoung;Park Jung-Ho;Kim Han-Su;Park Kyu-Charn
    • Proceedings of the IEEK Conference
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    • 2004.06b
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    • pp.485-488
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    • 2004
  • As scaling down the cell channel length, the increment of B concentration in channel region is inevitable to overcome the punch-through, especially in flash memory cell with 90nm technology. This paper shows that the high dose ion implantation in channel cause the Si defect. which has been proved to be the major cause of the tailed Vth in distribution. And also mechanical stress due to SiN-anneal process can induce the Si dislocation. and get worse it. With decreasing the channel implantation dose, skipping the anneal and reducing the mechanical stress, Si defect problem is solved completely. We are verify first that the optimization of B concentration in channel must be certainly considered in order to improve Si defect. It is also certainly necessary to stabilize the distribution of cell Vth in the next generation of flash memory.

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