• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.186-189
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• 2002

The MFIS capacitors were fabricated using a metalorganic decomposition method. Thin layers of $CeO_2$ were deposited as a buffer layer on Si substrate and BLT thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated. X-ray diffraction was used to determine the phase of the BLT thin films and the quality of the $CeO_2$ layer. The morphology of films and the interface structures of the BLT and the $CeO_2$ layers were investigated by scanning electron microscopy. The width of the memory window in the C-V curves for the MFIS structure is 4.78 V. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.58-62
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• 1999

We fabricated a new hairpin type HTS 2-pole microstrip Bandpass filter to operate at 5.8GHz. The fabrication method was pulsed laser deposition and YBCO films were deposited on ${\alpha}$-A1$_2O_3$ substrates with a CeO$_2$ thin layer as a buffer layer. We developed a new style hairpin type filter by using interdigitide innerpole. Compared to the saute size regular hairpin type filters, our filter had a lower center frequency, bandwidth and loss by an amount of 14.5%, 29.6%, 0.5488dB, respectively. The size of the filters were 13.7${\times}$3.3mm. We did simulations on the several types of band pass filters by using HFSS and serenade. We measured growth rate and Tc of YBCO films grown on CeO$_2$/ ${\alpha}$-A1$_2O_3$ substrates which were rotated while growing films.

• Progress in Superconductivity and Cryogenics
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• v.11 no.4
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• pp.20-24
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• 2009

YBCO coated conductors (CC) on the $CeO_2$-buffered IBAD-MgO template were fabricated by metal-organic deposition (MOD) Process with Ba-trifluoroacetate and fluorine-free Y and Cu precursor materials. The precursor solution was coated on $CeO_2$-buffered IBAD MgO templates using the multiple dip-coating method, decomposed into inorganic precursors by pyrolysis up to $400^{\circ}C$ within 3 h, and finally fired at $740{\sim}800^{\circ}C$ in a reduced oxygen atmosphere. Microstructure, texture, and superconducting properties of YBCO films were found highly sensitive to both the firing temperature and time. The high critical current density ($J_C$) of $1.15\;MA/cm^2$ at 77.3K in the self-field could be obtained from $1\;{\mu}m$ thick YBCO CC, fired at $740^{\circ}C$ for 3.5 h, implying that high performance YBCO CC is producible on IBAD MgO template. Further enhancement of $J_C$ values is expected by improving the in-plane texture of $CeO_2$-buffer layer and avoiding the metal substrate contamination.

• 한국초전도학회:학술대회논문집
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• v.15
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• pp.71-71
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• 2005

• Progress in Superconductivity and Cryogenics
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• v.9 no.3
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• pp.5-8
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• 2007

All three buffer layers of $Y_2O_3$, YSZ, and $CeO_2$ have been deposited on the biaxially textured metal substrates using rf-sputtering method, The first 50-70nm thick $Y_2O_3$ films were grown epitaxially on biaxially textured metal substrates as a seed layer and followed by the diffusion barrier ${\sim}100nm$ thick YSZ and subsequent capping layer ${\sim}200nm$ thick $CeO_2$ deposited epitaxially on top of $Y_2O_3$ seed layer. The epitaxial orientation of all three layers were all (100) grown with rocking curve Full Width at Half Maximum(FWHM) of $4-5^{\circ}$ and in plane phi-scan FWHM of $6-8^{\circ}$ using X -ray diffraction analysis. The NiO phases formed during the $Y_2O_3$ seed layer deposition seem to degrade the crystallinity and roughen the surface morphology of the following layer observed by AFM(Atomic Force Microscopy). The buffered tapes were used as substrates for long length YBCO coated conductors with high critical current density $J_c$. The five multi-turn of metal tapes was employed to increase the thickness of films and production rate to compensate the low growth rate of rf-sputtering method.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.153-156
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• 2003

The multi-layer oxide buffer layer for the coated conductor was deposited on biaxially textured Ni substrates using pulsed laser deposition. Oxygen partial pressure, 4％$H_2$/Ar partial pressure, and deposition temperature were deposition variables investigated to find the optimum deposition conditions. $Y_2$O$_3$seed layer was deposited epitaxially on metal substrate. The full buffer architecture of $Y_2$O$_3$/YSZ/CeO$_2$was successfully prepared on metal substrate.

• Bulletin of the Korean Chemical Society
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• v.19 no.6
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• pp.671-676
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• 1998

The formation and dissociation rates of $Ce^{3+}$ Complexes of the 1,4,7,10-tetraaza-13,16-dioxacyclooctadecane-NN', N",N"'-tetraacetic acid (1), 1,4,7,10-tetraaza-13,16-dioxacyclooctadecane-N,N',N",N"'-tetramethylacetic acid (2), and 1,4,7,10-tetraaza-13,16-dioxacyclooctadecane-N,N',N",N"'-tetrapropionic acid (3) have been measured by the use of stopped-flow spectrophotometry. Observations were made at 25.0±0.1 ℃ and at an ionic strength of 0.10 M $NaClO_4$. The complexation of $Ce^{3+}$ ion with 1 and 2 proceeds through the formation of an intermediate complex $(CeH_3L^{2+})^*$ in which the $Ce^{3+}$ ion is incompletely coordinated. This may then lead to be a final product in the rate-determining step. Between pH 4.76 and 5.76, the diprotonated $(H_2L^{2-})$ from is revealed to be a kinetically active species despite of its low concentration. The stability constants $(logK(CeH_3L^{2+}))$ and specific water-assisted rate constants $(k_{OH})$ of intermediate complexes have been determined from the kinetic data. The dissociation reactions of $Ce^{3+}$ complexes of 1, 2, and 3 were investigated with $Cu^{2+}$, ions as a scavenger in acetate buffer. All complexes exhibit acid-independent and acid-catalyzed contributions. The effect of buffer and $Cu^{2+}$ concentration on the dissociation rate has also been investigated. The ligand effect on the dissociation rate of $Ce^{3+}$ complexes is discussed in terms of the side-pendant arms and the chelate ring sizes of the ligands.

• Progress in Superconductivity
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• v.8 no.2
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• pp.175-180
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• 2007

High temperature superconductor $YBa_2Cu_3O_{7-x}$ (YBCO) films have been grown by in-situ electron beam evaporation on artificial metal tapes such as ion-beam assisted deposition (IBAD) and rolling assisted biaxially textured substrates (RABiTS). Deposition rate of the YBCO films is $10{\sim}100{\AA}/sec$. X-ray diffraction shows that the films are grown epitaxially but have inter-diffusion phases, like as $BaZrO_3\;or\;BaCeO_3$, at their interfaces between YBCO and yttrium-stabilized zirconia (YSZ) or $CeO_2$, respectively. Secondary ion mass spectroscopy depth profile of the films confirms diffused region between YBCO and the buffer layers, indicating that the growth temperature ($850{\sim}900^{\circ}C$) is high enough to cause diffusion of Zr and Ba. The films on both the substrates show four-fold symmetry of in-plane alignment but their width in the -scan is around $12{\sim}15^{\circ}$. Transmission electron microscopy shows an interesting interface layer of epitaxial CuO between YBCO and YSZ, of which growth origin may be related to liquid flukes of Ba-Cu-O. Resistivity vs temperature curves of the films on both substrates were measured. Resistivity at room temperature is between 300 and 500 cm, the extrapolated value of resistivity at 0 K is nearly zero, and superconducting transition temperature is $85{\sim}90K$. However, critical current density of the films is very low, ${\sim}10^3A/cm^2$. Cracking of the grains and high-growth-temperature induced reaction between YBCO and buffer layers are possible reasons for this low critical current density.

• Progress in Superconductivity and Cryogenics
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• v.5 no.3
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• pp.11-14
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• 2003

The detailed conditions of dc-sputtering for depositions of yttria-stabilized ZrO$_2$ (YSZ) films were investigated, while the films were grown on the CeO$_2$ template layers on biaxially textured Ni-tapes. The window of oxygen pressures for proper growth of YSZ films, which was dependent on sputtering powers, was determined by sufficient oxidations of the YSZ films and the de-oxidation of the target surface, which was required for rapid sputtering. The window turned out to be fairly wide under certain values of argon pressure. When the sputtering power was raised, the deposition rate increased without narrowing the window. The fabricated YSZ films showed good texture qualities and surface morphologies.

• Journal of the Korean Ceramic Society
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• v.42 no.12 s.283
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• pp.787-792
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• 2005

A symmetrical LSCF $(La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-\delta})\;ScSZ(89ZrO_2-10Sc_2O_3-1CeO_2)/LSCF$ electrochemical cell with a GDC (Gadolinium-Doped Ceria, $90CeO_2-10Gd_2O_3$) interlayer that was inserted between the LSCF cathode and ScSZ electrolyte was fabricated, and the electrochemical performance of these cells was evaluated. The GDC interlayer was deposited on a ScSZ electrolyte using a screen-printing technique. The GDC interlayer prevented the unfavorable solid-state reactions at the LSCF/ScSZ interfaces. The LSCF cathode on the GDC interlayer had excellent electrocatalytic performance even at $650^{\circ}C$. The Area Specific Resistance (ASR) was strongly dependent on the thickness and heat-treatment temperature of the GDC interlayer. The impedance spectra showed that the cell with a $15\~27{\mu}m$ thick GDC interlayer heat-treated at $1200^{\circ}C$ had the lowest ASR.