• Journal of the Korean Chemical Society
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• v.47 no.4
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• pp.370-375
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• 2003

$BaMg_2Al_16O_27:Eu,\SrGa_2S_4:Eu$, and ZnCdS:Ag,Cl phosphors were chosen to produce blue, green, and red emissions, respectively, under excitation from a violet light emitting diode (LED). A four-band white LED was obtained by a combination of nonabsorbed violet emission from a violet LED and blue, green, and red emissions from $BaMg_2Al_16O_27:Eu,\SrGa_2S_4:Eu$, and ZnCdS:Ag,Cl phosphors. The luminescent properties of the four-band white LED were also discussed.

• Journal of the Korean Society for Marine Environment & Energy
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• v.3 no.4
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• pp.56-64
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• 2000

Behavior of trace metals in Masan Bay, Korea was studied in August 1998 when the oxygen deficient condition occurred. Dissolved Cd and Zn concentration in the surface waters decreased with increasing distance from Masan Harbor. Dissolved concentrations of Cd, Cu Pb and Zn in the surface waters were higher than bottom waters. Particulate(acid-teachable fraction) concentrations of Cu, Cd and Pb in the surface waters of Masan Bay decreased with increasing distance from Masan Harbor. Bottom waters contained higher concentrations of particulate Cd, Cu, Pb and Zn than surface waters. Distribution coefficients between dissolved and particulate phase (K/sub d/) of Cu and Cd decreased with the increasing distance from the Harbor, possibly due to reaction of these elements with sewage-derived particulate matter Al, Zn, Cu, Cd, and Pb in the surface sediment showed relatively high concentration in the inner Masan Bay.

• Korean Journal of Environmental Biology
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• v.22 no.1
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• pp.120-126
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• 2004

Kenaf plants were hydroponically grown in reactor containing toxic metals as Cd, Cu, Cr, Ni and Zn to examine the ability to take up heavy metal. The plants were fertilized using a nutrient solution, which was appropriately adjusted to optimum pH, DO and conductivity. For n hydraulic retention time of 8 days, Cr, Cd, Cu, Ni and Zn were removed up to 90.5, 80.5, 66.1%, 71.1% and 79.4%, and reduced from 2.34 to 0.54 mg $L^{-1}$, 3.37 to 1.07 mg $L^{-1}$, 4.92 to 3.19 mg $L^{-1}$, 6.31 to 4.41 mg $L^{-1}$ and 6.27 to 2.09 mg $L^{-1}$. Especially, accumulation rate of Cr, Cd, Cu, Ni and Zn in the plant were measured up to 347.32, 275.39, 157.52, 50.48 and 211.01 mg DW kg $L^{-1}d^{-1}$, respectively. We considered that Kenaf plants removed Cr, Cd and Zn more effectively than other toxic metals applied.

• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.400-403
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• 2012

$Cu_2ZnSnSe_4$(CZTSe) is emerged as a promising material for thin-film solar cells because of non-toxic, inexpensive and earth abundant more than $Cu(In,Ga)Se_2$ materials. For fabricating compound semiconductor thin-film solar cells, CdS is widely used for a buffer layer which fabricated by a chemical bath deposition method (CBD). Through the experiment, we controlled deposition temperature and mol ratio of solution conditions to find the proper grain 크기 and exact composition. The optimum CdS layers were characterized in terms of surface morphology by using a scanning electron microscope (SEM) and atomic force microscope (AFM). The optimized CdS layer process was applied on CZTSe thin-films. The thickness of buffer layer related with device performance of solar cells which controlled by deposition time. Local surface potential of CdS/CZTSe thin-films was investigated by Kelvin probe force microscopy (KPFM). From these results, we can deduce local electric properties with different thickness of buffer layer on CZTSe thin-films. Therefore, we investigated the effect of CdS buffer layer thickness on the CZTSe thin-films for decreasing device losses. From this study, we can suggest buffer layer thickness which contributes to efficiencies and device performance of CZTSe thin-film solar cells.

• Fashion & Textile Research Journal
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• v.4 no.3
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• pp.266-272
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• 2002

This research is compared and analyzed variations of the heavy metal contents in human hairs according to treating permanent wave manipulation before and after and permanent wave agents. This is the survey of women's hairs in 19 years old. On the basis of this we would like to analyze a extend of exposing of heavy metal scientifically. Also, we would to show a basic data for the permitted limits of heavy metal to keep the healthy hair The conclusion is as follows.; Mean contents of heavy metal in hairs is 2.11 ppm (Pb), 0.25 ppm (Cd), 2.62 ppm (Ni), 256 ppm (Zn), 8.45 ppm (Cu). In reducing agents (processing lotions) of perm, 1.50 ppm (Pb), 0.03 ppm (Cd), 0.05 ppm (Ni), 15.45 ppm (Zn), 0.86 ppm (Cu) in a perm (S), 2.30 ppm (Pb), 0.05 ppm (Cd), 0.05 ppm (Ni), 13.05 ppm (Zn), 0.65 ppm (Cu) in a perm (T). In oxidizing agents (neutralizer) of perm, 1.40 ppm (Pb), 0.03 ppm (Cd), 0.09 ppm (Ni), 9.05 ppm (Zn), 0.65 ppm (Cu) in a perm (S), 1.50 ppm (Pb), 0.02 ppm (Cd), 0.16 ppm (Ni), 8.00 ppm (Zn), 0.85 ppm (Cu) in a perm (T). Mean contents of lead(Pb) didn't show significant differences according to treating cysteine perm agents, showed it according to 3 treating thioglycolic acid perm agents (p<0.05). Mean contents of cadmium(Cd) showed significant differences (p<0.001) according to 2 treating both perm agents. Mean contents of nickel (Ni) showed neither. Mean contents of zinc (Zn) showed significant differences according to 2 treating cysteine perm agents (p<0.001) and 1 treating thioglycolic acid perm agents (p<0.01). Mean contents of copper (Cu) didn't show significant differences according to treating cysteine perm agents, showed it according to 1 treating thioglycolic acid perm agents (p<0.001).

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.371-371
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• 2011

본 연구에서는 황화납(PbS)과 황화카드뮴(CdS)을 감응물질로 하는 양자점 감응형 태양전지를 만들고 효율을 측정하였다. Sputter를 이용하여 고진공의 상태에서 산화아연(ZnO) film을 seed layer로 증착한 후 수열합성법으로 ZnO 나노선을 합성한다. 합성된 나노선을 successive ionic layer adsorption and reaction (SILAR) 법으로 PbS, CdS 양자점을 합성하고 이를 주사전자 현미경(SEM), X-선 회절(XRD)을 통해 확인하였다. 또한 PbS와 CdS의 co-sensitizer를 합성하고 diffused reflectance spectra (DRS)를 측정함으로써 넓은 범위의 광흡수도를 확인할 수 있었다. Co-sensitizer의 합성 방법을 달리하여 PbS/CdS를 합성한 후 각각의 효율을 측정해보고, 더 높은 효율을 내기 위한 방안에 대해 고찰하였다.

• Journal of Information Display
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• v.13 no.2
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• pp.91-95
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• 2012

Indium phosphide (InP) quantum dots (QDs) are considered alternatives to Cd-containing QDs for application in light-emitting devices. The multishell coating with ZnSe/ZnS was shown to improve the photoluminescence quantum yield (QY) of InP QDs more strongly than the conventional ZnS shell coating. Structural proof for this system was provided by X-ray diffraction and transmission electron microscopy. QY values in the range of 50-70% along with peak widths of 45-50 nm can be routinely achieved, making the optical performance of InP/ZnSe/ZnS QDs comparable to that of Cd-based QDs. The fabrication of a working electroluminescent light-emitting device employing the reported material demonstrated the feasibility of the desired application.

• Nuclear Engineering and Technology
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• v.51 no.3
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• pp.731-737
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• 2019

In this study, a new measurement method based on voltage transients in CdZnTe detectors response to low energy photon irradiations is applied to measure the electron mobility (${\mu}_e$) and electron mobility-lifetime product $({\mu}{\tau})_e$ in a CdZnTe detector. In the proposed method, the pulse rise times are derived from low energy photon response to 59.5 keV($^{241}Am$), 88 keV($^{109}Cd$) and 122 keV($^{57}Co$) ${\gamma}-rays$ for the irradiation of the cathode surface at each detector for different bias voltages. The electron $({\mu}{\tau})_e$ product was then determined by measuring the variation in the photopeak amplitude as a function of bias voltage at a given photon energy using a pulse-height analyzer. The $({\mu}{\tau})_e$ values were found to be $(9.6{\pm}1.4){\times}10^{-3}cm^2V^{-1}$ for $1000mm^3$, $(8.4{\pm}1.6){\times}10^{-3}cm^2V^{-1}$ for $1687.5mm^3$ and $(7.6{\pm}1.1){\times}10^{-3}cm^2V^{-1}$ for $2250mm^3$ CdZnTe detectors. Those results were then compared with the literature $({\mu}{\tau})_e$ values for CdZnTe detectors. The present results indicate that, the electron mobility ${\mu}_e$ and electron $({\mu}{\tau})_e$ values in CdZnTe detectors can be measured easily by applying voltage transients response to low energy photons, utilizing a fast signal acquisition and data reduction and evaluation.

• Proceedings of the Materials Research Society of Korea Conference
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• 2008.11a
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• pp.17.2-17.2
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• 2008

• Proceedings of the Materials Research Society of Korea Conference
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• 2008.05a
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• pp.26.2-26.2
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• 2008