• Title/Summary/Keyword: CdTe (cadmium tellurium)

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A study on the synthesis and characterization of CdTe nanocrystals (CdTe 나노결정의 합성과 특성분석에 관한 연구)

  • 주상민;강윤묵;김동환
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.03a
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    • pp.111-111
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    • 2003
  • 반도체 나노결정은 양자구속효과(quantum confinement effect)에 의한 광학적인 특성을 갖기 때문에 광전자공학(optoelectronic), 광전지(photovoltaic)분야에 응용하려는 연구가 활발히 진행되고 있다. 본 연구에서는 고순도의 CdTe 나노결정을 1-thioglycerol 표면 완화제(surface stabilizer)로 사용하여 수용액 상태로 합성하였다. 모든 실험은 $N_2$ 분위기의 삼각플라스크에서 실험하였다. Cadmium 소오스로는 Cd(CIO$_4$)$_2$.6$H_2O$(Cadmium perchlorate hydrate-Aldrich)를 사용하였고 Tellurium 소오스로는 A1$_2$Te$_3$(Aluminum telluride-CERAC)와 H$_2$SO$_4$가 반응하여 H$_2$Te gas가 주입되도록 하였다. 합성된 CdTe 나노결정은 core-shell 형태로 존재하며 결정크기에 따른 특성분석을 위해서 High Resolution Transmission Electron Microscope (HRTEM), Photoluminescence spectroscopy, X-ray diffraction(XRD), UV-vis absorption spectra 분석을 하였다 또한 CdTe 나노결정을 나노와이어로 제작하여 CdTe 나노결정을 이용한 태양전지 제작에 응용하고자 한다.

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Study on Sonochemical Synthesis and Characterization of CdTe Quatum Dot (초음파 방법을 이용한 CdTe 양자점의 합성 및 특성에 관한 연구)

  • Yoo, Jeong-yeol;Kim, Woo-seok;Park, Seon-A;Kim, Jong-Gyu
    • Applied Chemistry for Engineering
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    • v.28 no.5
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    • pp.571-575
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    • 2017
  • In this study, cadmium telluride (CdTe) quantum dots were synthesized by using ultrasonic irradiation method. Optical properties and structural characteristics of the CdTe quantum dots were analyzed by two main variables; the ratio of the precursor and the synthesis time. As the synthesis time increased, the band gap reduction was observed with the growth of CdTe quantum dots. As for the luminescence properties, the red shift appeared at 510~610 nm wavelength range. Also, it was confirmed that the red shift occurs rapidly as the ratio of Te increases. According to PL peak intensity, the highest intensity was shown at 180 to 240 min. Structural characteristics of CdTe quantum dots were investigated through XRD and TEM, and the cubic zinc blend structure was observed. The size of quantum dots was about 2.5 nm and uniformly dispersed when the synthesis time took 210 min. In addition, the apparent crystallinity was discovered in FFT image.

Syntheses of CdTe Quantum Dots and Nanoparticles through Simple Sonochemical Method under Multibubble Sonoluminescence Conditions

  • Hwang, Cha-Hwan;Park, Jong-Pil;Song, Mi-Yeon;Lee, Jin-Ho;Shim, Il-Wun
    • Bulletin of the Korean Chemical Society
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    • v.32 no.7
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    • pp.2207-2211
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    • 2011
  • Colloidal cadmium telluride (CdTe) quantum dots (QDs) and their nanoparticles have been synthesized by one pot sonochemical reactions under multibubble sonoluminescence (MBSL) conditions, which are quite mild and facile compared to other typical high temperature solution-based methods. For a typical reaction, $CdCl_2$ and tellurium powder with hexadecylamine and trioctylphosphine/trioctylphosphineoxide (TOP/TOPO) as a dispersant were sonicated in toluene solvent at 20 KHz and a power of 220W for 5-40 min at 60 $^{\circ}C$. The sizes of CdTe particles, in a very wide size range from 2 nm-30 ${\mu}m$, were controllable by varying the sonicating and thermal heating conditions. The prepared CdTe QDs show different colors from pale yellow to dark brown and corresponding photoluminescence properties due mainly to the quantum confinement effect. The CdTe nanoparticles of about 20 nm in average were found to have band gap of 1.53 eV, which is the most optimally matched band gap to solar spectrum.

Low-temperture Synthesis of CdTe/Te Core-shell Hetero-nanostructures by Vapor-solid Process

  • Song, Gwan-U;Kim, Tae-Hun;Bae, Ji-Hwan;Lee, Jae-Uk;Park, Min-Ho;Yang, Cheol-Ung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.580-580
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    • 2012
  • Heterostructures has unique and important properties, which may be helpful for finding many potential applications in the field of electronic, thermoelectric, and optoelectronic devices. We synthesized CdTe/Te core-shell heterostructures by vapor-solid process at low temperatures using a quartz tube furnace. Two step vapor-solid processes were employed. First, various tellurium structures such as nanowires, nanorods, nanoneedles, microtubes and microrods were synthesized under various deposition conditions. These tellurium nanostructures were then used as substrates in the second step to synthesize the CdTe/Te core-shell heterostructures. Using this method, various sizes, shapes and types of CdTe/Te core-shell structures were fabricated under a range of conditions. These structures were analysed by scanning electron microscopy, high resolution transmission electron microscopy, and energy dispersive x-ray spectroscopy. The vapor phase process at low temperatures appears to be an efficient method for producing a variety of Cd/Te hetero-nanostructures. In addition, the hetero-nanostructures can be tailored to the needs of specific applications by deliberately controlling the synthetic parameters.

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Transformation of Semiconductor Nanoparticles into Twisted-Nanoribbons under Light (빛을 이용한 CdTe 나노입자의 자기조립과정을 통한 나노리본으로의 변화)

  • Lee, Seung-Min;Lee, Kisun;Hong, Yeon Ki;Park, Byung Heung;Kim, Ki-Sub
    • Journal of Institute of Convergence Technology
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    • v.3 no.1
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    • pp.51-54
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    • 2013
  • Cadmium telluride(CdTe) nanowires were successfully synthesized from individual nanoparticles via self-assembly and the evolutionary process was investigated. The oxidation of tellurium ions on CdTe nanoparticles resulted in the organization of individual nanoparticle into twisted-nanoribbons. The nanoparticles self-assembled to twisted ribbons under light while nanoparticles under dark transformed to straight nanowires made of several layers of individual nanoparticles. The images of nanoribbons were analysed based on transmission electron microscopy and scanning electron microscopy. The photoluminescence was blue-shifted from 555 to 545nm.

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Study on Characteristic difference of Semiconductor Radiation Detectors fabricated with a wet coating process

  • Choi, Chi-Won;Cho, Sung-Ho;Yun, Min-Suk;Kang, Sang-Sik;Park, Ji-Koon;Nam, Sang-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.192-193
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    • 2006
  • The wet coating process could easily be made from large area film with printing paste mixed with semiconductor and binder material at room temperature. Semiconductor film fabricated about 25mm thickness was evaluated by field emissions-canning electron microscopy (FE-SEM). X-ray performance data such as dark current, sensitivity and signal to noise ratio (SNR) were evaluated. The $Hgl_2$ semiconductor was shown in much lower dark current than the others, but the best sensitivity. In this paper, reactivity and combination character of semiconductor and binder material that affect electrical and X-ray detection properties would prove out though experimental results.

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