• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.304-308
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• 2004

The $Cd_{1-x}Zn_xS$ thin films were grown on the Si(100) wafers by a hot wall epitaxy method(HWE). The source and substrate temperature are $600^{\circ}C\;and\;440^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the $Cd_{0.53}Zn_{0.47}S$ samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.65{\times}10^7$, the MAPD of 338mW, and the rise and decay time of 9.7ms and 9.3ms, respectively

• 한국진공학회지
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• 제9권3호
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• pp.254-257
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• 2000

MBE 법으로 GaAs 기판 위에 성장시킨 $Cd_{1-x}Mg_x/Te$ 박막시료를 조성비(x=0, 0.23, 0.43)에 따라 타원편광 분석기로 측정하여 연구하였다. 기존에 보고된 고상시료(bulk)의 결과와 비교한 결과, 첫째 $E_0$ 밴드갭 에너지 아래에서 나타나는 간섭무늬를 확인할 수 있었고, 이는 박막이 투명함을 보여주는 사실이며 그 결과 이번 시료의 우수성을 확인할 수 있었다. 둘째 $E_2$밴드갭 에너지 영역에서 종전의 고상시료에서 측정 발표된 값보다도 매우 높고 명확한 <$\varepsilon_2$> 값이 측정되어, $E_2$와 $E_0$' 밴드갭 에너지가 명확히 분리되는 것을 보았다. 간섭무늬를 제거하기 위해 다층구조계산(multilayer calculation)을 수행하여 x=0.23일 때의 $E_0$ 밴드갭 에너지를 볼 수 있었다.

• Macromolecular Research
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• 제17권12호
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• pp.995-1002
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• 2009

Luminescent polynorbornene (PNB)/quantum dot (CdSe@ZnS; QD) composite nanorods and nanotubes were successfully prepared using anodic aluminum oxide (AAO) membranes of various pore sizes as templates. To protect QDs with high quantum yield from quenching during the phosphoric acid treatment used to remove the AAO templates, chemically stable and optically clear norbornene-maleic anhydride copolymers (P(NB-r-MA)) were employed as a capping agent for QDs. The amine-terminated QDs reacted with maleic anhydride moieties in P(NB-r-MA) to form PNB-grafted QDs. The chemical- and photo-stability of QDs encapsulated with PNB copolymers were investigated by photoluminescence (PL) spectroscopy. By varying the pore size of the AAO templates from 40 to 380 urn, PNB/QD composite nanorods or nanotubes were obtained with a good dispersion of QDs in the PNB matrix.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.57.1-57
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• 1998

• 한국결정학회지
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• 제9권1호
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• pp.53-63
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• 1998

HWE 방법에 의해 Cd1-xZnxS 박막을 (100)방향을 Si 기판 위에 성장시켰다. 증발원과 기판의 온도를 각각 600℃, 440℃로 하여 성장시킨 Cd1-xZnxS 박막의 이중 결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)값이 265 arcsec로 가장 작았다. Van der Pauw 방법으로 Hall효과를 측정하여 운반자 농도와 Hall 이동도의 온도 의존성을 조사하였다. 광전도 셀의 특성으로 spectral response, 최대 허용소비전력(MAPD), 광전류와 암전류(pc/dc)의 비 및 응답시간을 측정하였다. Cd0.53Zn0.47S광전도 셀을 Cu증기 분위기에서 열처리한 경우 감도(γ)는 0.99, pc/dc은 1.65 ×10 7 그리고 최대 허용소비전력(MAPD)은 338mW, 오름시간 (rise time)은 9.7ms, 내림시간(decay time)은 9.3ms로 가장 좋은 광전도 특성을 얻었다.

• 한국전기전자재료학회논문지
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• 제20권10호
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• pp.852-858
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• 2007

The dependence of substrate on the Ag photodoping phenomenon into amonhous $({\alpha}-)$ GeSe thin film has been investigated using holographic method. A 442 nm HeCd laser was utilized as a light source for the holographic exposure and a 632.8 nm HeNe laser to measure the variation of diffraction efficiency $(\eta)$ in real time. The films (Ag and ${\alpha}-GeSe$) were thermally deposited on the substrates, i.e. p-type Si(100), n-type Si(100) and slide glass. The sample structures prepared were two types: type I (Ag/${\alpha}$-SeGe/substrate) and type II (${\alpha}$-SeGe/Ag/substrate). The $\eta$ kinetics comprised to be three steps in which $\eta$ initially increases, is saturated to be maximized $(\eta_M)$, and then decreases relatively gradually. For the same substrate, the $\eta_M$ values of the type II were higher than those of type I. In addition, the type II exhibited the highest $\eta_M$ for p-type Si substrate, while that in type I was observed for n-type Si substrate. These tendency is explained by the diffusion of minority carrier in the films and the change of magnitude and direction in internal fields generated at the film interfaces. Atomic-force-microscope (AFM) was used to observe relief-type grating patterns.

• 센서학회지
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• 제2권1호
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• pp.81-86
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• 1993

Chemical bath deposition 방법으로 다결정 CdSe 박막을 세라믹 기판 위에 성장시킨 다음 온도를 변화시켜 열처리하고 X-선 회절무늬를 측정하여 결정구조를 밝혔다. $450^{\circ}C$로 열처리한 시료가 X-선 회절무늬로 부터 외삽법에 의해 $a_{o}$와 $c_{o}$는 각각 $4.302{\AA}$과 $7.014{\AA}$인 육방정계임을 알았다. 이 때 낱알크기는 약 $0.3{\mu}m$이었다. Van der Pauw 방법으로 Hall 효과를 측정하여 운반자 농도와 이동도의 온도의존성을 연구하였다. 이동도는 33 K에서 200 K까지는 압전산란에 의하여, 200K에서 293 K까지는 극성광학산란에 의하여 감소하는 경향을 나타냈다. 광전도 셀의 특성으로 스텍트럼 응답, 감도(${\gamma}$), 최대허용소비전력 및 응답 시간을 측정하였다.

• 한국재료학회지
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• 제22권5호
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• pp.259-273
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• 2012

Chalcogenide-based semiconductors, such as $CuInSe_2$, $CuGaSe_2$, Cu(In,Ga)$Se_2$ (CIGS), and CdTe have attracted considerable interest as efficient materials in thin film solar cells (TFSCs). Currently, CIGS and CdTe TFSCs have demonstrated the highest power conversion efficiency (PCE) of over 11% in module production. However, commercialized CIGS and CdTe TFSCs have some limitations due to the scarcity of In, Ga, and Te and the environmental issues associated with Cd and Se. Recently, kesterite CZTS, which is one of the In- and Ga- free absorber materials, has been attracted considerable attention as a new candidate for use as an absorber material in thin film solar cells. The CZTS-based absorber material has outstanding characteristics such as band gap energy of 1.0 eV to 1.5 eV, high absorption coefficient on the order of $10^4cm^{-1}$, and high theoretical conversion efficiency of 32.2% in thin film solar cells. Despite these promising characteristics, research into CZTS-based thin film solar cells is still incomprehensive and related reports are quite few compared to those for CIGS thin film solar cells, which show high efficiency of over 20%. The recent development of kesterite-based CZTS thin film solar cells is summarized in this work. The new challenges for enhanced performance in CZTS thin films are examined and prospective issues are addressed as well.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.426-426
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• 2012

The CIGS absorber has outstanding advantages in the absorption coefficient and conversation efficiency. The CIGS thin film solar cells have been researched for commercialization and increasing the conversion efficiency. CIG precursors were deposited on the Mo coated glass substrate by magnetron sputtering with multilayer structure, which is CuIn/CuGa/CuIn/CuGa. Then, the metallic precursors were selenized under high Se pressure by RTP method which included. Se vapor was supplied using Se cracker cell instead of toxic hydrogen selenide gas. Se beam flux was controlled by variable reservoir zone (R-zone) temperature during selenization process. Cracked Se source reacted with CIG precursors in a small quantity of Se because of small size molecules with high activation energy. The CIGS thin films were studied by FESEM, EDX, and XRD. The CIGS solar cell was also developed by layering of CdS and ZnO layers. And the conversion efficiency of the CIGS solar cell was characterization. It was reached at 6.99% without AR layer.

• 센서학회지
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• 제13권2호
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• pp.128-132
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• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.