• Journal of Sensor Science and Technology
• /
• v.11 no.5
• /
• pp.309-318
• /
• 2002

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured with Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7116\;eV-(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2S_4$ have been estimated to be 0.1291 eV and 0.0248 eV, respectively, by means of the photocurrent spectra and the Hopfield quasi cubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}5$ states of the valence band of the $AgInS_2$/GaAs epilayer. The three photocurrent peaks observed at 10K areascribed to the $A_1$-, $B_1$-, and C1-exciton peaks for n = 1.

• Journal of Sensor Science and Technology
• /
• v.7 no.2
• /
• pp.131-139
• /
• 1998

$CdS_{0.67}Se_{0.33}$ single crystal was grown by vertical sublimation method of closed tube physical vapour deposition. The (0001) growth plane of oriented single crystals was confirmed from the back-ref1ection Laue patterns. From the Hall effects by van der Pauw method, the as-grown $CdS_{0.67}Se_{0.33}$ single crystals were found to be n-type semiconductors. The mobility appeared to be decreased by lattice scattering at temperature range from 150K to 293K and by impurity scattering at temperatures ranging from 30K to 150K In order to explore its applicability in photoconductive cells, we measured the ratio of photo-current to dark-current (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time respectively. The results indicated that for the samples annealed in Cu vapour the photoconductive characteristics are best. We obtained sensitivity of 0.99, the value of pc/de of $1.84{\times}10^{7}$, the MAPD of 323mW and the rise and decay time of 9.3 ms and 9.7 ms, respectively.

• Journal of Sensor Science and Technology
• /
• v.2 no.1
• /
• pp.81-86
• /
• 1993

Polycrystalline CdSe thin films were grown on ceramic substrate using a chemical bath deposition (CBD) method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in $N_{2}$ gas at $450^{\circ}C$ it was found hexagonal structure whose lattice parameters $a_{o}$ and $c_{o}$ were $4.302{\AA}$ and $7.014{\AA}$, respectively. Its grain size was about $0.3{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33 K and 200 K, and by polar optical scattering at temperature range of 200 K and 293 K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.

• Journal of Sensor Science and Technology
• /
• v.2 no.1
• /
• pp.3-10
• /
• 1993

Polycrystalline CdS thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdS samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure whose lattice constants $a_{o}$ and $c_{o}$ were $4.1364{\AA}$ and $6.7129{\AA}$, respectively. Its grain size was about $0.35{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility defending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 150k and by polar optical scattering at temperature range of 150K and 293K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.

• Proceedings of the IEEK Conference
• /
• 1998.10a
• /
• pp.413-416
• /
• 1998

Sensitivity and calibration considerations are most important in the design and implementation of real control systems. Ideally parameter changes due to various causes should not appreciably affect the system's performances. But all the values of physical components of the plants and controllers as well as the relevant environmental conditions change in time, thus the output performance can be deteriorated during the operating span of the system. Naturally the duty of calibration or the prevention of performance deterioration due to excessive component sensitivity should be provided to the control system. In this paper, we propose a digital controller which has the capability of calibration and gain adjustment as well as the execution of control law. Specifically the problems of gain adjustment and offset calibration in the light source and CdS sensor module for position measurement in a flexible link system are considerably resolved. The parameters of measurement module are prone to change due to environmental brightness conditions resulting in poor steady state performance of the overall control system. Thus a proper method is necessary to provide correction to the changed values of gain and offset in the position measurement module. The proposed controller, whenever necessary, measures the open-loop characteristics, andthen calculates the offset and sensor gain correction values based on the prepared standard measurements. It is applied to the control of a flexible link system with the gain and offset calibration porblems in the light sensor module for position to show the applicability.

• Journal of Energy Engineering
• /
• v.20 no.4
• /
• pp.353-357
• /
• 2011

An embedded two-axis solar tracking system was developed by using AVR micro controller for enhancing solar energy utilization. The system consists of an Atmega128 micro controller, two step motors, two step drive modules, CdS sensors, GPS module and other accessories needed for functional stability. This system is controlled by both an astronomical method and an optical method. Initial operation is performed by the result from the astronomical method, which is followed by the fine controlled operation using the signals from Cds sensors. The GPS sensor generates UTC, longitude and latitude data where the solar tracker is installed. A database of solar altitude, azimuth, and sunrise and sunset times is provided by UART (Universal Asynchronous Receiver/Transmitter).

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1998.06a
• /
• pp.169-172
• /
• 1998

A phyaical model of the Czochralski method for silicon single crystals is designed to measure the change of velocities and temperature profilles in the melt. Wood's metal(Bi 50%, Pb 26.7%, Sn 13.3%, Cd 10%, m.p. 70℃) is used to simulate the silicon melt in the crucible. To measure the local velocity change, electromagnetic probe is adopted as a velocity sensor. The output voltage of the sensor shows linear relationship to the velocity of the melt.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.36 no.12
• /
• pp.1177-1183
• /
• 2012

This study aims to develop a system that maximizes the radiative heat transfer from the heliostat to the receiver by using the configuration factor and a solar tracking device. As the heat transfer from the heliostat to the receiver is delivered by solar radiation, the configuration factor commonly utilized for radiation is applied to control the heliostat. Tracking the sun and calculating its position are possible by using an illuminance sensor (CdS) and Simulink. By applying optimized algorithms programmed using Simulink that maximize the configuration factors among the heliostat, receiver, and sun in real time, the solar absorption efficiency of the receiver can be maximized. Simulations were performed on how to change the angle required to control the elevation and azimuthal angle of the heliostat during the daytime with respect to various distances.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.51 no.7
• /
• pp.89-95
• /
• 2014

An LED lighting which adjusted brightness according to the surround ambient implemented using PWM technology and power devices. To measure the brightness of surround ambient a CdS sensor was used. A control board for the generation of the PWM signal was made using a MCU and duty ratio was controlled according to light intensity of surround ambient of the system. To drive the LED lamps which require high-voltage and high-current power devices were used for switching the DC power supply. Measurement results show that the IGBT is excellent as only lineality but the PowerBJT is more good to consider to efficiency and cost.

• Proceedings of the Korean Society of Dyers and Finishers Conference
• /
• 2011.03a
• /
• pp.36-36
• /
• 2011

We synthesized new dye sensor based on indole compound. Through the UV-vis absorptions, we analyzed chemosensing properties to explain metal binding properties. The peak absorptions increased at 472 nm when added metal cations($Cd^{2+}$, $Cu^{2+}$, $Hg^{2+}$, $Fe^{2+}$, $Zn^{2+}$, $Ni^{2+}$ and $Cr^{3+}$) and gradually decreased the peak at 516 nm. Thus, this UV-Vis absorption behavior clearly showed the metal binding reaction. To measure energy level of used dye sensor, HOMO/LUMO energy value was calculated with cyclovaltagramm(CV) and using computational calculation method, in which we estimated the optimum structure of dye sensor. CV and computational calculation method, both compared to find suitable geometric structure. (with almost same energy values.) From the computational calculation, dye sensor has plane structure. So, Amine and ketone in the dye sensor faced each other and makes position to bind metal cations. In addition, these positions was supported pull-push electron system and generated MLCT process, when the dye sensor was bonded with the metal cations and resulted chemosensing properties. Through the electrochemical and computational calculation method analyze, we proposed the chemosensing principles that the dye sensor bind the metal cation between ketone and amine. Finally, the formation type of metal ion bindings was determined by Job's plot measurements.