• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.14 no.2
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• pp.122-127
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• 2021

This paper produces CdS thin film using ITO glass as substrates. The MDS (Multiplex Deposition Sputter System) was used to produce devices by changing RF power and deposition time. The manufactured specimen was analyzed for its optical properties. The purpose of this paper is to find the fabrication conditions that can be applied to the photo-absorbing layer of solar cells. When RF power was 50W and deposition time was 10 minutes, the thickness was measured at 64Å. At 100W, the thickness was measured at 406Å and at 150 W, the thickness was measured at 889Å. Thin films were found to increase in thickness as RF power increased. As a result of the light transmittance measurement, 550-850nm was observed to have a transmittance of approximately 70% or more when the RF power was 50W, 100W, and 150W. Increasing RF power increased thickness and increased particle size, resulting in increased thin film density, resulting in reduced light transmittance. When RF power was 100W and deposition time was 15 minutes, the band gap was calculated at 3.998eV. When deposition time is 20 minutes, it is 3.987eV, 150W is 3.965eV at 15 minutes, and 3.831eV at 20 minutes. It was measured that the band gap decreased as the RF power increased. At XRD analysis, diffraction peaks at 2Θ=26.44 could be observed regardless of changes in RF power and deposition time. The FWHM was shown to decrease with increasing deposition time. And it was measured that the particle size increased as RF power was constant and deposition time was increased.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.9
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• pp.121-127
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• 1994

The capability for application of rf magnetron sputterred and post annealed BaTiO$_{3}$ thin films in dielectrics AC drived TFELD(thin film electroluminescent device) was investigated. The dielectric constant of the thin films slightly increased up to about 25 with increase fothe post annealing temperature in the range of 210$^{\circ}C$-480$^{\circ}C$. The dielectric loss was about 0.005-0.01 except for the high frequency range above 100kHz and nearly independent on post annealing temperature. The BaTiO$_{3}$ thin film used for TFELD was annealed at 480.deg. C and Si$_{3}$N$_{4}$ thin film was inserted between BaTiO$_{3}$, lower dielecrics and ZnS:Mn, phosphor layer for stable driving of the device and for fear of interdiffusion. Regardless of the frequency of the applied sine wave voltage, the threshold voltage of the prepared TFELD was 65volt and saturated brightness was about 3000cd/m$^{2}$ at 130volt(2kHz sine wave), 65volt above V$_{TH}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.391-394
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• 1998

Electroluminescence is the light emission obtained by an electrical excitation energy passing through a phosphor under an applied high electrical field. EL are paid much attention on flat panel display as a backlight and indicator, which are divided into ACPRL(alternating-current powder electroluminescent) and ACTFEL(alternating-current powder electroluminescent). In this paper, Electric and emission properties on ACPEL are investigated based on ZnS:Cu phosphor. The basic structure on this is ITO glass/phosphor/insulator/ backelectrode, CR-M which has high efficiency on thermal properties and dielectric Properties was introduced and BaTiO$_3$ as a insulating layer in order to increase app1ied electric field on phosphor. Changing on Dielectric and emission Properties was caused by a different viscosity of binder which filled on space between phosphor particle. 60cd/$m^2$ under 60V, 2kHz sinusoidal was gotten from ACPELD prepared in this work.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.399.2-399.2
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• 2016

Cu(In,Ga)Se2 (CIGS) 박막 태양전지는 높은 효율과 낮은 제조비용, 높은 신뢰성으로 인해 박막 태양전지 중 가장 각광받고 있다. 특히 유리기판 대신 가볍고 유연한 철강소재나 플라스틱 소재를 이용하여 발전분야 외에 건물일체형, 수송용, 휴대용등 다양한 분야에 적용이 가능하다. 이러한 유연 기판을 이용한 CIGS 태양전지의 개발을 위해서는 기판의 특성에 따른 다양한 공정개발이 선행되어야 한다. Poly-imide와 같은 유연기판은 공정온도가 $400^{\circ}C$이하로 낮고 기판이 매우 얇아 기존 Mo 공정을 개선하여야한다. 이러한 유연기판의 특성을 고려하여 본 연구에서는 기존 bi-layer Mo의 bottom layer의 두께를 조절하여 박막의 strain을 조절하였다. 유연기판으로는 SKC KOLON에서 제조된 GL type의 기판을 사용하였다. 기판의 두께는 50um이다. 먼저 Mo의 bottom layer 두께 비율을 기존 12.5%에서 50%로 증가 시켰으며 전체 박막의 두께 역시 900nm에서 500nm로 두께를 감소시키며 실험을 실시하였다. 그 후 흡수층은 Co-Evaporation 방법을 이용하여 제조하였으며 이때 공정온도는 기존 공정온도에서 450, $400^{\circ}C$로 낮추어 흡수층을 제조하였다. 소자 제조 후 초기 Mo의 strain 개선과 저온공정이 적용되지 않은 경우 4.4%에서 공정 최적화 후 13%로 효율이 증가하였다. 제조된 흡수층은 SEM, XRF, XRD등을 이용하여 분석하였으며 그 외 일반적인 방법을 이용하여 Mo, CdS, TCO, Al grid를 제조하였다. AR 코팅은 제외 하였으며 제조된 소자는 솔라 시뮬레이터를 이용하여 효율 특성 분석을 실시하였으며 Q.E. 분석을 실시하였다.

• Water for future
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• v.12 no.2
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• pp.36-42
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• 1979

This study has been conducted to find out the location and amount of the subterrain water body developed in the alluvial stratum in Paho-Dong, Sungsee-Myo-n, Dalsung-Kun are. An earlier test drilling was done in this area by R.O.K. Agricultural Promotion Corporation. The area consists of a small river basin and surrounding low hills developed around the junction of the Nakdong and Kumho Rivers. The strata of this area are made of Paldal gravel, Bokhyundong and Banyawol layers which were formed in the cretaceous period of the Meso-saicera or acid dikes and covered with-irregular alluvial layers. The alluvial layer in this area is composed of rather minute particles and proportional electric resistance tests on this layer show $10^2\;-\;10^3\;\Omega/cm$. The drillings up to 12meters deep showed only the sand layer (Form 3 to 26meters in thickness) contains water. The sand layers can not be considered a good water trapping one. Applying the data from the drillings to A.Hazen's equation, $K\;=\;{cd_e}^2\;(0.7\;+0.03t)$ to get the theoretical value of the water infilterated, I calculated it as K=13.92m/day. And again the value was set to Dupuit equation, (equation omitted) to acquire the pumping water amount the result was $Q_1\;=\;77.20\;\textrm{m}^3/day$. When the data-applied to the equation for pumping water amount, (equation omitted), the results were $Q_2\;=\;122.39\;\textrm{m}^3/day$ and K = 38m/day $Q_1\;and;Q_2$ (tow types of pumping water amount) represent proper value decrease and maximum value decrease respectively. Therefore, $Q_2$ is the least amount of water we can pump. The area covers about $1,555,000\;\textrm{m}^2$ and the maximum water needed in this area amounts to $155,000\textrm{m}^3$. That means we have to drill 1,406 pumping wells. It is concluded that undertaking the project in this area is irrational or even desperate and surface water should be developed more favorably.

• Advances in Energy Research
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• v.1 no.2
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• pp.117-126
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• 2013

In this paper, core-shell semiconductor quantum dots (QDs) CdSeS/ZnS with emission at 490 nm and 450 nm were investigated for their use in luminescent down-shifting (LDS) layers. Luminescent quantum yield (LQY) of the QDs measurements in solution proposed that they were suitable candidates for inclusion in LDS layers. QDs were encapsulated in poly(methyl,methacrylate) (PMMA) polymer matrix and films were fabricated of $134{\pm}0.05$ microns. Selections of organic dyes from BASF Lumogen F range were also investigated for their use as LDS layers; Violet 570 and Yellow 083. The addition of LDS layers containing Violet 570 dye demonstrated a unity LQY when encapsulated within a PMMA matrix. A PV device of an LDS layer of Lumogen Violet 570 deposited on top of a crystalline silicon cell was fabricated where it was demonstrated to increase the efficiency of the cell by 34.5% relative.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1293-1294
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• 2006

OLEDs based on organic thin films are similar to semiconductor base light-emitting diodes in that they were also considered to be one of the next generation flat-panel displays. They are attractive because of low-operating voltage, low power consumption, ease of fabrication, and low cost. In this study, we used poly (3,4-ethylenedioxythiophene)/poly (4-styrenesulfonate) (PE DOT : PSS) as a hole injection layer. In this experiment spin coating method was used with various speed rate. The fundamental structure of the OLEDs was ITO/PEDOT:PSS/NPB/$Alq_3$/Al. As a result, we obtained the enhancement performance of OLEDs when the spin coating speed was 4000 rpm. We obtained a maximum luminance of 24334 $cd/m^2$ at a current density of 967 $mA/cm^2$.

• Journal of Korea Multimedia Society
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• v.5 no.4
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• pp.393-398
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• 2002

The conventional bit allocation scheme for MPEG-1 audio encoding searches the subband with minimum MNR(mask-to-noise ratio) repetitively until its operation is completed, which occupies most of its total computational complexity. In this paper, as a computationally efficient approximation of it, we propose a new bit allocation scheme with a simple subband search and compare it with the existing schemes[1][2] in terms of the computational complexity and sound quality. For the performance comparison, we used the pop music signal contained in SQAM(sound quality assess material) CD from EBU. Simulation results show that the computational complexity of the proposed method is about 42% of that of the existing one in [1] and the sound quality difference in terms of MNR between the two schemes is within the 0.2 ㏈, for the case of using the layer II at the bit rate of 128 kbps.

• Solar Energy
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• v.20 no.2
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• pp.43-54
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• 2000

We prepared and characterized $Cu(In_{1-x}Ga_x)Se_2$(CIGS) films using a elemental co-evaporation method for absorbing layer of high efficiency thin film solar cells. The CIGS films deposited on a soda-lime glass exhibited low resistivity because of higher carrier concentration. Na was accumulated at the CIGS surface and the 0 and Se were also accumulated at the surface, suggesting that oxidation is a driving force of Na accumulation. The structure of CIGS film was modified or a secondary phase was formed in the Cu-poor CIGS bulk films probably due to the incorporation of Na into Cu vacancy sites. As the Ga/(In+Ga) ratio increased, the diffraction peaks of $Cu(In_{1-x}Ga_x)Se_2$ films were shifted to larger angle and splitted, and the grain size of $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films became smaller. All $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films showed the p-type conductivity regardless of the Ga/(In+Ga) ratio. Ag/n-ZnO/i-ZnO/CdS/$Cu_{0.91}(In_{0.7}Ga_{0.3})Se_2$/Mo solar cells were fabricated. The currently best efficiency in this study was 14.48% for $0.18cm^2$ area ($V_{oc}=581.5mV,\;J_{sc}=34.88mA$, F.F=0.714).

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.5 no.4
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• pp.285-294
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• 2000

In order to determine the horizontal and vertical distributions of metals and prospect the recent metal pollution history in Nakdong Estuary, we took surface and core sediments. Maximum value of organic matter occurs at the upstream site located 4 km from Nakdong barrage, and the concentration of trace metals (Zn, Cu, and Pb etc.) decrease seaward in the estuary. The sedimentation rates, based on $^{210}$Pb$_{ex}$ and $^{137}$Cs activities, were 0.34 cm/yr in inside of barrage (core 1) and 0.25 cm/yr in Changrim (core 4). Sediment mixing layer does not exist in core 1, where anoxic condition is known to be prevail. The topmost sediment layer of core 4 (<3.5 cm) is severely mixed. At sites 1 and 4, concentrations of Cu slowly increased during the period of 1920-1970, rapidly increased during 1970-1990, and followed by slight decrease after 1990. Zn contents increased in early 1960s and peaked in 1993, and followed by decrease after 1990s. Pb has increased continuously since early 1970s. At the downstream of the barrage, Cu and Zn have increased in the topmost layer. The trend of increase of Cu is evident after 1950 (11 cm in sediment depth). Overall trend of heavy metal concentration clearly indicates the pollution has been increasing after the construction of the barrage.