• Title/Summary/Keyword: CdS deposition

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The Effects of Process Parameters on Properties of CdS Thin Films Prepared by Solution Growth Method

  • Kim, Soo-Gil;Lee, Yong-Eui;Kim, Sang-Deok;Kim, Hyeong-Joon;Jinsoo Song;Yoon, Kyung-Hoon;Park, Byung-Ho
    • The Korean Journal of Ceramics
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    • v.3 no.1
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    • pp.57-61
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    • 1997
  • The effects of pH of solution on structural, electrical, and optical properties of CdS thin films prepared by solution growth method were investigated. With increasing pH of the solution, both crystallinity and transmittance of CdS thin film were deteriorated due to impurities and CdS particles, which were produced by homogeneous nucleation and adsorbed on the surface of CdS thin films. The films were strongly adherent to substrates and has low resistivity of 10~$10^2{\omega}cm$ regrardless of deposition conditions. After annealing at 30$0^{\circ}C$ in Ar atmosphere, the resistivity decreased due to desorption of impurity ions as well as the formation of S vacancies, but after annealing above 35$0^{\circ}C$ it increased by an agglomeration of S vacancies. After annealing in air atmosphere, the film resistivity increased because of the formation of oxide particle in grain boundaries.

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Pyrolysis Synthesis of CdSe/ZnS Nanocrystal Quantum Dots and Their Application to Light-Emitting Diodes (CdSe/ZnS 나노결정 양자점 Pyrolysis 제조와 발광다이오드 소자로의 응용)

  • Kang, Seung-Hee;Kumar, Kiran;Son, Kee-Chul;Huh, Hoon-Hoe;Kim, Kyung-Hyun;Huh, Chul;Kim, Eui-Tae
    • Korean Journal of Materials Research
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    • v.18 no.7
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    • pp.379-383
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    • 2008
  • We report on the light-emitting diode (LED) characteristics of core-shell CdSe/ZnS nanocrystal quantum dots (QDs) embedded in $TiO_2$thin films on a Si substrate. A simple p-n junction could be formed when nanocrystal QDs on a p-type Si substrate were embedded in ${\sim}5\;nm$ thick $TiO_2$ thin film, which is inherently an n-type semiconductor. The $TiO_2$ thin film was deposited over QDs at $200^{\circ}C$ using plasma-enhanced metallorganic chemical vapor deposition. The LED structure of $TiO_2$/QDs/Si showed typical p-n diode currentvoltage and electroluminescence characteristics. The colloidal core-shell CdSe/ZnS QDs were synthesized via pyrolysis in the range of $220-280^{\circ}C$. Pyrolysis conditions were optimized through systematic studies as functions of synthesis temperature, reaction time, and surfactant amount.

Dependence of the Electrical and Optical Properties of CdS Thin Films on Substrate and Annealing Temperatures (기판온도 및 열처리온도에 대한 CdS 박막의 전기적 및 광학적 특성)

  • Park, Ki-Cheol;Shim, Ho-Seob;Kim, Jeong-Gyoo
    • Journal of Sensor Science and Technology
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    • v.6 no.2
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    • pp.163-171
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    • 1997
  • CdS thin films for window material of solar cell were prepared by close spaced vapor transport deposition system and annealed at different temperatures. The structural, electrical, and optical properties of as-deposited and annealed CdS films were investigated as functions of substrate and annealing temperatures. The CdS thin films were grown perpendicularly to the substrate along the (002)plane with hexagonal structure regardless of the preparation conditions The resistivity of the CdS film deposited was increased gradually from $60{\Omega}cm$ for $25^{\circ}C$ to $2{\times}10^{4}{\Omega}cm$ for $300^{\circ}C$. The optical transmittance at the substrate temperature of $25^{\circ}C$ was about 80% in the the visible spectrum. The resistivity increased monotonically, and the optical transmittance was decreased substantially with annealing temperature due to the increased defect density in the CdS film.

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Improved Performance of CdS/CdTe Quantum Dot-Sensitized Solar Cells Incorporating Single-Walled Carbon Nanotubes

  • Shin, Hokyeong;Park, Taehee;Lee, Jongtaek;Lee, Junyoung;Yang, Jonghee;Han, Jin Wook;Yi, Whikun
    • Bulletin of the Korean Chemical Society
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    • v.35 no.10
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    • pp.2895-2900
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    • 2014
  • We fabricated quantum dot-sensitized solar cells (QDSSCs) using cadmium sulfide (CdS) and cadmium telluride (CdTe) quantum dots (QDs) as sensitizers. A spin coated $TiO_2$ nanoparticle (NP) film on tin-doped indium oxide glass and sputtered Au on fluorine-doped tin oxide glass were used as photo-anode and counter electrode, respectively. CdS QDs were deposited onto the mesoporous $TiO_2$ layer by a successive ionic layer adsorption and reaction method. Pre-synthesized CdTe QDs were deposited onto a layer of CdS QDs using a direct adsorption technique. CdS/CdTe QDSSCs had high light harvesting ability compared with CdS or CdTe QDSSCs. QDSSCs incorporating single-walled carbon nanotubes (SWNTs), sprayed onto the substrate before deposition of the next layer or mixed with $TiO_2$ NPs, mostly exhibited enhanced photo cell efficiency compared with the pristine cell. In particular, a maximum rate increase of 24% was obtained with the solar cell containing a $TiO_2$ layer mixed with SWNTs.

Enhanced Photocurrent from CdS Sensitized ZnO Nanorods

  • Nayak, Jhasaketan;Son, Min-Kyu;Kim, Jin-Kyoung;Kim, Soo-Kyoung;Lee, Jeong-Hoon;Kim, Hee-Je
    • Journal of Electrical Engineering and Technology
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    • v.7 no.6
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    • pp.965-970
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    • 2012
  • Structure and optical properties of cadmium sulphide-zinc oxide composite nanorods have been evaluated by suitable characterization techniques. The X-ray diffraction spectrum contains a series of peaks corresponding to reflections from various sets of lattice planes of hexagonal ZnO as well as CdS. The above observation is supported by the Micro-Raman spectroscopy result. The optical reflectance spectra of CdS-ZnO is compared with that of ZnO where we observe an enhanced absorption and hence diminished reflection from CdS-ZnO compared to that from only ZnO. A very small intensity of the visible photoluminescence peak observed at 550 nm proves that the ZnO nanorods have very low concentrations of point defects such as oxygen vacancies and zinc interstitials. The photocurrent in the visible region has been significantly enhanced due to deposition of CdS on the surface of the ZnO nanorods. CdS acts as a visible sensitizer because of its lower band gap compared to ZnO.

Fabrication of Bright Blue SrS:CuCl Thin-Film Electroluminescent(TFEL) Devices (고휘도 청색 발광 SrS:CuCl 박막 전계발광소자의 제작)

  • Lee, Soon-Seok;Lim, Sung-Kyoo
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.1
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    • pp.36-43
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    • 2000
  • The sulfur pressure and TRA(rapid thermal annealing) conditions of the fabricated SrS:CuCl TFEL devices were optimized to improve blue color luminance. The thickness of the phosphor layer of SrS:CuCl TFEL devices fabricated by electron beam deposition system was 6000 ~ 8000 ${\AA}$. The fabricated TFEL devices were annealed at 800 $^{\circ}C$ for 3 min. It was shown that the crystallinity of SrS:CuCl phosphor was improved by an increase in RTA temperature and RTA time. Blue color was emitted from the TFEL device with emission peak wavelength of 468 nm and 500 nm. The CIE color coordinates were x = 0.21, y = 0.33. The luminance($L_{40}$) of TFEL device strongly depended on the sulfur pressure of deposition chamber and increased from 262 cd/$m^2$ to 728 cd/m2 as the sulfur pressure increased from $8{\times}10^{-6}$ torr to $2{\times}10^{-5}$ torr.

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Growth of Thin Film Using Chemical Bath Deposition Method and Their Photoconductive Characteristics (CBD 방법에 의한 CdS 박막의 성장과 광전도 특성)

  • Hong, K.J.;Lee, S.Y.;You, S.H.;Suh, S.S.;Moon, J.D.;Shin, Y.J.;Jeoung, T.S.;Shin, H.K.;Kim, T.S.;Song, J.H.;Rheu, K.S.
    • Journal of Sensor Science and Technology
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    • v.2 no.1
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    • pp.3-10
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    • 1993
  • Polycrystalline CdS thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdS samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure whose lattice constants $a_{o}$ and $c_{o}$ were $4.1364{\AA}$ and $6.7129{\AA}$, respectively. Its grain size was about $0.35{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility defending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 150k and by polar optical scattering at temperature range of 150K and 293K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.

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Study of ZnS/CIGS Hetero-interface for Cd-free CIGS Solar Cells (Cd-free 태양전지를 위한 ZnS/CIGS 이종접합 특성 향상 연구)

  • Shin, Donghyeop;Kim, Jihye;Go, Youngmin;Yun, Jaeho;Ahn, Byungtae
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.106.1-106.1
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    • 2011
  • The Cu(In,Ga)Se2 (CIGS) thin film solar cells have been achieved until almost 20% efficiency by NREL. These solar cells include chemically deposited CdS as buffer layer between CIGS absorber layer and ZnO window layer. Although CIGS solar cells with CdS buffer layer show excellent performance, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. Among Cd-free candidate materials, the CIGS thin film solar cells with ZnS buffer layer seem to be promising with 17.2%(module by showa shell K.K.), 18.6%(small area by NREL). However, ZnS/CIGS solar cells still show lower performance than CdS/CIGS solar cells. There are several reported reasons to reduce the efficiency of ZnS/CIGS solar cells. Nakada reported ZnS thin film had many defects such as stacking faults, pin-holes, so that crytallinity of ZnS thin film is poor, compared to CdS thin film. Additionally, it was known that the hetero-interface between ZnS and CIGS layer made unfavorable band alignment. The unfavorable band alignment hinders electron transport at the heteo-interface. In this study, we focused on growing defect-free ZnS thin film and for favorable band alignment of ZnS/CIGS, bandgap of ZnS and CIGS, valece band structure of ZnS/CIGS were modified. Finally, we verified the photovoltaic properties of ZnS/CIGS solar cells.

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암모니아의 농도에 따른 CBD-ZnS/CIGS 박막태양전지의 제작 및 분석

  • Jeong, Yong-Deok;Choe, Hae-Won;Jo, Dae-Hyeong;Park, Rae-Man;Lee, Gyu-Seok;Kim, Je-Ha
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.298-299
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    • 2010
  • Cu(In, Ga)Se2 (CIGS) 박막 태양전지는 Soda lime glass/Mo/CIGS/CdS/ZnO/ITO/Al 의 구조를 가지고 있다. CIGS 화합물은 direct bandgap 구조를 하고 있으며, 광흡수율이 다른 어떤 물질들 보다 뛰어나 박막으로도 충분히 태양광을 흡수할 수 있다. 또한 Ga의 도핑 농도에 따른 밴드갭 조절도 가능하다. 이러한 성질들로 인해 현재 박막태양전지로서 20.1%의 최고효율을 가지고 있다.[1] CIGS 박막 태양전지에서 p-CIGS layer와 스퍼터링으로 증착되는 n-ZnO layer사이의 buffer 층으로 chemical bath deposition (CBD)-CdS 박막을 주로 사용한다. CBD-CdS 박막은 n-ZnO 스퍼터로 증착 시킬 때, CIGS 층의 손상을 최소화하고, 이 두 층 사이에서의 격자상수와 밴드갭의 차이를 줄여주어 CIGS 박막태양전지의 효율을 증가 시키는 역할을 한다. 하지만, Cd (카드뮴)의 심각한 독성과 낮은 밴드갭(2.4eV)으로 인해 CIGS 층에서의 광흡수율을 줄여, CdS를 대체할 새로운 buffer 층의 필요성이 대두되었다.[2] 그 대안으로 ZnS, Zn(O, S, OH), (Zn, Mg)O, In2S3 같은 물질이 연구되고 있다. 현재 CBD-ZnS를 buffer 층으로 사용한 CIGS 박막태양전지의 효율은 최고 18.6%로 CBD-CdS의 최고효율보다는 약 1.5% 낮지만, ZnS가 높은 밴드갭(3.7~3.8eV)과 Cd-free 물질이라는 점에서 CdS를 대체할 물질로 각광받고 있다. 본 연구에서는 기존의 CdS 박막을 제조하는 방법과 같은 방법인 CBD를 이용하여 ZnS 박막을 제조하였다. ZnS 박막을 제조하기 위해서는 Zinc sulfate, Thiourea, 암모니아가 사용된다. 암모니아의 mol 농도에 따른 CBD-ZnS/CIGS 박막태양전지의 효율 변화를 관찰하기 위해 암모니아의 mol 농도는 1 mol, 2 mol, 3 mol, 4 mol, 5 mol, 6 mol, 그 이상의 과량을 사용하여 실험하였다. 실험 결과, 암모니아농도 5 mol에서 효율 13.82%를 확인할 수 있었다. 최고효율을 보인 조건인 암모니아 농도가 5 mol 일 때, Voc는 0.602V, Jsc는 33.109mA/cm2, FF는 69.4%를 나타내었다.

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Photocatalytic Efficiency and Bandgap Property of the CdS Deposited TiO2 Photocatalysts (TiO2/CdS 복합광촉매의 밴드갭 에너지 특성과 광촉매 효율)

  • Lee, Jong-Ho;Heo, Sujeong;Youn, Jeong-Il;Kim, Young-Jig;Suh, Su-Jeong;Oh, Han-Jun
    • Korean Journal of Materials Research
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    • v.29 no.12
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    • pp.790-797
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    • 2019
  • To improve photocatalytic performance, CdS nanoparticle deposited TiO2 nanotubular photocatalysts are synthesized. The TiO2 nanotube is fabricated by electrochemical anodization at a constant voltage of 60 V, and annealed at 500 for crystallization. The CdS nanoparticles on TiO2 nanotubes are synthesized by successive ionic layer adsorption and reaction method. The surface characteristics and photocurrent responses of TNT/CdS photocatalysts are investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), UV-Vis spectrometer and LED light source installed potentiostat. The bandgaps of the CdS deposited TiO2 photocatalysts are gradually narrowed with increasing of amounts of deposited CdS nanoparticles, which enhances visible light absorption ability of composite photocatalysts. Enhanced photoelectrochemical performance is observed in the nanocomposite TiO2 photocatalyst. However, the maximum photocurrent response and dye degradation efficiency are observed for TNT/CdS30 photocatalyst. The excellent photocatalytic performance of TNT/CdS30 catalyst can be ascribed to the synergistic effects of its better absorption ability of visible light region and efficient charge transport process.