The Korean Journal of Ceramics

The Korean Ceramic Society (한국세라믹학회)
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The Effects of Process Parameters on Properties of CdS Thin Films Prepared by Solution Growth Method

  • Kim, Soo-Gil (School of Materials Science and Engineering and Interuniversity Semiconductor Research Center, Seoul National University) ;
  • Lee, Yong-Eui (School of Materials Science and Engineering and Interuniversity Semiconductor Research Center, Seoul National University) ;
  • Kim, Sang-Deok (School of Materials Science and Engineering and Interuniversity Semiconductor Research Center, Seoul National University) ;
  • Kim, Hyeong-Joon (School of Materials Science and Engineering and Interuniversity Semiconductor Research Center, Seoul National University) ;
  • Jinsoo Song (New Energy Department, Korea Institute of Energy Research) ;
  • Yoon, Kyung-Hoon (New Energy Department, Korea Institute of Energy Research) ;
  • Park, Byung-Ho (School of Materials and Metallurgical Engineering, Kumoh National University)
  • Published : 1997.03.01
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Abstract

The effects of pH of solution on structural, electrical, and optical properties of CdS thin films prepared by solution growth method were investigated. With increasing pH of the solution, both crystallinity and transmittance of CdS thin film were deteriorated due to impurities and CdS particles, which were produced by homogeneous nucleation and adsorbed on the surface of CdS thin films. The films were strongly adherent to substrates and has low resistivity of 10~$10^2{\omega}cm$ regrardless of deposition conditions. After annealing at 30$0^{\circ}C$ in Ar atmosphere, the resistivity decreased due to desorption of impurity ions as well as the formation of S vacancies, but after annealing above 35$0^{\circ}C$ it increased by an agglomeration of S vacancies. After annealing in air atmosphere, the film resistivity increased because of the formation of oxide particle in grain boundaries.

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References

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