• Clean Technology
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• v.25 no.1
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• pp.46-55
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• 2019

CdS and CdZnS/ZnO materials were prepared using precipitation method and used as photocatalysts for the photocatalytic degradation of rhodamine B (RhB) under visible light irradiation. The prepared photocatalysts were also characterized by XRD and UV-vis DRS. The results indicated that the photocatalysts with intended crystalline structures were successfully obtained and both the CdS and CdZnS/ZnO can absorb visible light as well as UV. The photocatalytic activities were examined with the addition of scavenger for various active chemical species and the difference of reaction mechanisms over the catalysts were discussed. The $CH_3OH$, KI and p-benzoquinone were used as scavengers for ${\cdot}OH$ radical, photogenerated positive hole and ${\cdot}O_2{^-}$ radical, respectively. The CdS and CdZnS/ZnO showed different photocatalytic degradation mechanisms of RhB. It can be postulated that ${\cdot}O_2{^-}$ radical is the main active species for the reaction over CdS photocatalyst, while the photogenerated positive hole for CdZnS/ZnO photocatalyst. As a result, the predominant reaction pathways over CdS and CdZnS/ZnO photocatalysts were found to be the dealkylation of chromophore skeleton and the cleavage of the conjugated chromophore structure, respectively. The above results may be mainly ascribed to the difference of band edge potential of conduction and valence bands in CdS, CdZnS and ZnO semiconductors and the redox potentials for formation of active chemical species.

• Journal of the Korean Society of Radiology
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• v.5 no.6
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• pp.357-361
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• 2011

In this study, the liquid-crystal optical modulation X-ray detection system using a CdS which is a family of II-IV compound semiconductor was proposed. The system consist of the detector, the signal processing part, the liquid-crystal driving parts, microcontroller, and I/O parts, and was designed to be suitable for miniaturization and portable. In addition, the system can measure a wide range X-ray by using the detecting range selection. In order to evaluate the performance of the proposed system, the CdS sensor's output characteristics were confirmed in accordance with changes of dose, and excellent correlation was determined. And also, the optical penetration ratio was discussed in accordance with changes of the applied voltage by measuring the change of the liquid-crystal in accordance with changes of the applied voltage. Through these results, the characteristics of the liquid-crystal optical modulation system such as the excellent reproducibility and the noise immunity were confirmed. And we considered that the CdS cell-based liquid-crystal optical modulated portable X-ray detection system could be applied to compact, low-cost, portable system.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.1
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• pp.32-43
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• 1996

A $CdIn_{2}Te_{4}$ single crystal was grown by modified veritical bridgman method. The $CdIn_{2}Te_{4}$ single crystal was evaluated to be tetragonal by the powder method. The $CdIn_{2}Te_{4}$ single crystal was confirmed to be grown with its c axis along the lengthe of the boule by the Laue reflection method. Hall effect of $CdIn_{2}Te_{4}$ single crystal was estimated by van der pauw method from 293 K to 30 K. Hall data of the sample perpendicular to c axis was $n=8.75{\times}10^{23}electrons/m^{3},\;R_{H}=7.14{\times}10^{-5}m^{3}/C,\;{\sigma}=176.40{\omega}^{-1}m^{-1},\;{$\mu}=3.41{\times}10^{-2}m^{2}/V.s$ and the sample parallel to c axis was $n=8.61{\times}10^{23}electrons/m^{3},\;R_{H}=7.26{\times}10^{-5}m^{3}/C,\;{\sigma}=333.38{\omega}^{-1}m^{-1}\;and\;{$\mu}=2.42{\times}10^{-2}m^{2}/V.s$ for room temperature. The value of Hall coefficient on sample perpendicular or parallel to c axis were positive. There $CdIn_{2}Te_{4}$ single crystal was p-type semiconductor.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.05a
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• pp.225-231
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• 2006

.고상반응법 (solid state reaction)합성된 ZnS:Mn,Cu,Cl 형광체는 약 $20^{\sim}25{\mu}m$ 의 구형이고, Cubic/hexagonal 구조를 보였다. Electroluminescent device(ELD)는 실크 스크린된 형광층(ZnS:Mn,Cu,Cl)/유전체층 ($BaTiO_3$)으로 구성되었으며, 각층은 $30^{\sim}50{\mu}m,\;50^{\sim}60{\mu}m$ 정도로 도포 하였다. 100 V-400 Hz 의 구동조건에서, ELD 의 백색 발광은 450 nm, 480 nm 픽에서 각각 $Cl_s{\to}Cu^{+}\;_{Zn},\;Cl_s{\to}Cu^{2+}\;_{Zn}$ 전이에 의해 중첩된 청색, 녹색 밴드의 발광과, 580 nm 픽에서 Mn 의 $^{4}T_1{\to}^{6}A_1$ 전이에 의한 황색 밴드의 발광으로 이루어진다. Cu 농도의 증가에 따라 450 nm 의 발광 밴드의 휘도는 감소하며 580 nm 의 발광 밴드의 휘도가 증가하였고 발광 휘도가 향상되었다. 즉, 색온도가 높은 cold white(10000 K)에서 색온도가 낮은 Warm white(3000 K) 로 변한다. 이것은 450 nm 의 발광 밴드가 580 nm 의 발광 밴드에 흡수되는 에너지 전이 (Energy transfer) 현상에 기인한다. ZnS:Mn,Cu,Cl 의 Mn 1.5 wt %, Cu 2.5 wt.% 에서 최적 발광 휘도를 보이며, 100 V-400 Hz 에서 약 $12cd/cm^2$이였다.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.8
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• pp.167-171
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• 2014

While the development of a portable plate panel display, thinning, high color reproduction, high brightness studies have been actively performed. LED, OLED is used as a light source. The research on quantum dot is much accomplished by the material of light source. Such quantum dot is the next generation semiconductor nano fluorescent substance because quantum dot has the high color reproduction and flexible display characteristic. In this study, we presented to method of using the quantum dot for implementation of the plate panel display. Quantum Dot (CdSe/ZnS), having a 100um thickness, is spread in PET barrier film. A Blue LED having a wavelength of 455nm as a light source irradiating light to the optical characteristic of the devices produced and evaluated. Also we presented the possibility for application with the color change film of the LCD.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.1
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• pp.78-86
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• 1995

Abstract We have investigated the structure and the conductivity of the CdTe films evaporated on the glass substrates by Electron Beam Evaporator (EBE) technique. The structure is observed to be polycrystalline whose phase is mainly hexagonal phase with some cubic phase. Dark electric conductivity is of the order of $1-^{-8} {\Omega}^{-1} cm^{-1}$ and slightly increased by annealing for an hour at $300^{\circ}C$. Activation energy calculated from the electrical conductivity which varies with increasing temperature is 1.446 eV in the case of room temperature substrates. The values of optical band gap are 1.52 eV in direct transition whereas 1.44 eV in indirect. The photoconductivity of the films is of the order of $1-^{-8} {\Omega}^{-1} cm^{-1}$ and the peak energy is about 600 nm in the room temperature. The photoconductivity starts to increase at 850 nm, which is close to 1.446 eV, the activation energy of CdTe polycrystal films.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.109-112
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• 2005

Cu계$I-III-VI_2$화합물은 직접천이형 반도체로 광흡수계수가 매우 높아 박막형 태양전지 제조에 매우 유리하다 또한 화학적으로 안정하며 Ga, A1등을 첨가하면 에너지 금지대폭을 조절할 수 있어 Wide Bandgap 태양전지 및 탠덤구조 태양전지를 제조하기에도 용이하다. $CuInSe_2(CIS)$ 물질에서 In을 $20-30\%$ 정도 치환한 $Cu(In,\;Ga)Se_2(CIGS)$ 태양전지의 경우 $19.5\%$의 세계 최고 효율을 보고하고 있으며 이는 다결정 실리콘 태양전지의 효율과 비슷한 수준이다. 본 연구에서는 동시 진공증발법을 이용하여 증착한 CIGS 박막 및 $CuGaSe_2(CGS)$ 박막을 이용하여 태양전지를 제조하였다. 공정의 재현성 및 결정립계가 큰 광흡수층 제조를 위하여 실시간 기판 온도 모니터링 시스템을 도입하였으며 버퍼층으로는 용액성장한 CdS 박막을 사용하였다. SLG/MO/CIGS(CGS)/CdS/ZnO/Al구조의 태양전지를 제조하여 면적 $0.5cm^2$에서 각각 $15\%$(CIGS)와 $7\%(CGS)$의 효율을 얻었다.

• New & Renewable Energy
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• v.1 no.2 s.2
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• pp.6-10
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• 2005

[ $CulnSe2$ ]계 화합물은 직접천이형 반도체로 광흡수계수가 매우 높아 박막형 태양전지 제조에 매우 유리하다. 또한 화학적으로 안정하며 Ga, Al 등을 첨가하면 에너지 금지대폭을 조절할 수 있어 Wide Bandgap 태양전지 및 탠덤구조 태양전지를 제조하기에도 용이하다. CIS 물질에서 In을 $20-30\%$ 정도 치환한 $Cu(In,\;Ga)Se_2(CIGS)$ 태양전지의 경우 19.5%의 세계 최고 효율을 보고하고 있으며 이는 다결정 실리콘 태양전지의 효율과 비슷한 수준이다. 본 연구에서는 동시 질공증발법을 이용하여 증착한 CIGS 박막 및 $CuGaSe_2(CGS)$ 박막을 이용하여 태양전지를 제조하였다. 공정의 재현성 및 결정립계가 큰 광흡수층 제조를 위하여 실시간 기판 온도 모니터링 시스템을 도입하였으며 버퍼층으로는 용액성장한 CdS 박막을 사용하였다. SLG/MO/CIGS(CGS)/CdS/ZnO/Al 구조의 태양전지를 제조하여 면적 $0.5cm^2$에서 각각 $17\%(CIGS)$와 $7\%(CGS)$의 효율을 얻었다.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.149-151
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• 2006

Cu계 $I-III-VI_2$화합물은 직접천이형 반도체로 광흡수계수가 매우 높아 박막형 태양전지 제조에 매우 유리하다. 또한 화학적으로 안정하며 Ga, Al 등을 첨가하면 에너지 금지대폭을 조절할 수 있어 Wide Bandgap 태양전지 및 탠덤구조 태양전지를 제조하기에도 용이하다 $CulnSe_2(CIS)$ 물질에서 In을 20-30% 정도 치환한 $Cu(In,Ga)Se_2(CIGS)$ 태양전지의 경우 19.5%의 세계 최고 효율을 보고하고 있으며 이는 다결정 실리콘 태양전지의 효율과 비슷한 수준이다. 본 연구에서는 동시 진공증발법을 이용하여 증착한 CIGS 박막을 이용하여 태양전지를 제조하였다. 공정의 재현성 및 결정립계가 큰 광흡수층 제조를 위하여 실시간 기판온도 모니터링 시스템을 도입하였으며 버퍼충으로는 용액성장한 CdS 박막을 사용하였다. SLG/MO/CIGS(CGS)/CdS/ZnO/Al 구조의 태양전지를 제조하여 면적 $0.5cm^2$에서 각각 17.5%의 효율을 얻었다.

• Korean Chemical Engineering Research
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• v.50 no.4
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• pp.729-732
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• 2012

Herein we report the in-situ synthesis and direct decoration of chalcogenide naoparticles (NPs) onto multiwalled carbon nanotubes (MWCNTs) through an ionic liquid-assisted sonochemical method (ILASM). The as-obtained MWCNT/$BMimBF_4$/CdTe, MWCNT/$BMimBF_4$/ZnTe and MWCNT/$BMimBF_4$/ZnSe nanocomposites were characterized by TEM images and EDS spectra. In particular, the morphologies of nanocomposites such as bump-like, rough, and smooth core-shell structures were strongly influenced by the type of precursors and the interactions with MWCNT. This synthetic strategy opens a new way to directly synthesize and deposit semiconducting NPs (s-NPs) onto CNTs, which consist of binary components obtained from two precursors with different reaction rates.