• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1511-1513
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• 1998

The purpose of this study is to research and develop PEO/PVDF electrolytes and $LiMn_2O_4$ composite cathode for all-solid state lithium rechargeable battery. We investigated AC impedance response and charge/discharge cycling of $LiMn_2O_4$/SPE/Li cells. The cell resistance was decreased so much initial charge process from 0% SOC to 100% SOC. The radius of semicircle of $LiMn_2O_4$/SPE/Li cell was so much from initial state to 20th cycling. The discharge capacity of the $LiMn_2O_4$ composite cathode was 144mAh/g based on $LiMn_2O_4$.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2017년도 춘계학술대회 논문집
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• pp.169-169
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• 2017

Due to key roles for the electrochemical stability and charge capacity the solid-electrolyte interphase (SEI) has been extensively studied in anodes of a Li-ion battery cell. There is, however, few of investigation for cathodes. Using first-principles based calculations we describe atomic-level process of the SEI layer formation at the interface of a carbonate electrolyte and $LiMn_2O_4$ spinel cathode. Furthermore, using beyond the conventional density functional theory (DFT+U) calculations we examine the work function of the cathode and frontier orbitals of the electrolyte. Based on the results we propose that proton transfer at the interface is an essential mechanism initiating the SEI layer formation in the $LiMn_2O_4$. Our results can guide a design concept for stable and high capacity Li-ion battery cell through screening an optimum electrolyte fine-tuned energy band alignment for a given cathode.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 추계학술대회 논문집
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• pp.184-186
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• 2009

Composites of LSCF($La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-\delta}$ and CGO(gadolinium doped ceria) is an efficient candidate cathode material with CGO electrolytes. In this study, LSCF with exact perovskite structure was synthesized by using solid state reaction(SSR) method. The optimized temperature to synthesize $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-\delta}$ with rhombohedral structure. was $1100^{\circ}C$. The polarization resistance of the LSCF/CGO(50:50 wt.%) was smaller than those of other composite cathodes. The analysis of the EIS data of LSCF/CGO suggests that the diffusion and adsorption-desorption of oxygen can be the key process in the cathodic reaction of SOFC using LSCF/CGO as cathode material.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.152-155
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• 2009

A novel two-step surface treatment was developed and demonstrated for the carbon nanotube (CNT) cathode with highly efficient backlight unit application. An adhesive taping method was applied firstly and then followed by a post-heat treatment for the CNT cathode. During the postheat treatment process, some residues covering the CNTs were burned out. The post-heat treatment enhanced the emission current of the CNT cathode around 20% compared with that of no heat-treated sample.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권2호
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• pp.62-66
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• 2004

This paper investigated the characteristics of a newly developed high density hollow cathode plasma (HCP) system and its application for the etching of silicon wafers. We used SF$_{6}$ and $O_2$ gases in the HCP dry etch process. Silicon etch rate of $0.5\mu\textrm{m}$/min was achieved with $SF_6$$O_2$plasma conditions having a total gas pressure of 50mTorr, and RF power of 100 W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. The results of this experiment can be used for various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications.s.

• E2M - 전기 전자와 첨단 소재
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• 제10권2호
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• pp.141-149
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• 1997

L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ powders were prepared by both GNP(Glycine-Nitrate Process) and solid state reaction method in various of calcination temperature(800-1000.deg. C) and time in air. Also, L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ cathode contacts on YSZ(Yttria-Stabilized Zirconia) substrate were prepared by screen printing and sintering method as a function of sintering temperature(1100-1450.deg. C) in air. Sintering behaviors have been investigated by SEM(Scanning Electron Microscope) and porosity measurement. Compositional and structural characterization were carried out by X-ray diffractometer and ICP AES(Inductively Coupled Plasma-Atomic Emission Spectrometry) analysis. Electrical characterization was carried out by the electrical conductivity with linear 4 point probe method. As the calcination period increased in solid state reaction method, L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ phase increased. Although L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ single phase was obtained only for 48hrs at 1000.deg. C, in GNP method it was easy to get single and ultra-fine L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ powders with submicron particle size at 650.deg. C for 30min. The particle size and thickness of L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ cathode contact by solid state reaction method did not change during the heat treatment, while those by GNP method showed good sintering characteristics because initial powder size fabricated from GNP method is smaller than that fabricated from solid state reaction method. Based on enthalpy change from thermodynamic data and ICP-AES analysis, it was suggested to make cathode contact in composition of (L $a_{0.7}$S $r_{0.3}$)$_{0.91}$ Mn $O_{3}$ which have little second phase (L $a_{2}$Z $r_{2}$ $O_{7}$) for high efficient solid oxide fuel cells applications. As (L $a_{0.7}$S $r_{0.3}$)$_{0.91}$Mn $O_{3}$ cathode contact on YSZ substrate was sintering at 1250.deg. C the temperature that liquid phase sintering did not occur. It was possible to obtain proper cathode contacts with electrical conductivity of 150(S/cm) and porosity content of 30-40%.m) and porosity content of 30-40%.

• 한국지하수토양환경학회:학술대회논문집
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• 한국지하수토양환경학회 2004년도 임시총회 및 추계학술발표회
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• pp.76-79
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• 2004

This research was carried out to evaluate role of supplementary reagents, such as phosphate and SDS, to remove hydrophobic organic contaminant from soils during the EK-Fenton process. The $H_2O$$_2$ stability improved due to the role as stabilizer of phosphate and SDS during the EK-Fenton process. Furthermore, although pH in region near cathode was 8.2 after test, $H_2O$$_2$ stability improved due to transportation of SDS in the region near cathode. Therefore, in tests using phosphate and SDS as supplementary reagent, the efficiency of phenanthrene treatment improved through the EK-Fenton process using longer reaction time.

• 소성∙가공
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• 제13권3호
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• pp.279-284
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• 2004

Electroforming is the highly specialized use of electrodeposition for the manufacture of metal parts and basically a specialized form of electroplating. So, we can apply electrochemical system analysis for electroforming process. Electrochemical systems are concerned with the interplay between electricity and chemistry, namely the measurements of electrical quantities, such as current density, potential, and charge, and their relationship to chemical parameters. This paper based on the basic equations of electrics and electrochemical kinetics, was employed for a theoretical explanation of the current density distribution on electroforming process. We calculated current density distribution and potential distribution on cathode. Also, calculated current density distribution of vertical direction. It was shown that current density is related with distance of between anode and cathode and mass transfer process.

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2018년도 춘계학술논문요약집
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• pp.57-57
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• 2018

The electrorefining process is generally composed of two recovery steps in pyroprocessing - the deposit of uranium onto a solid cathode and the recovery of the remaining uranium and TRU elements simultaneously by a liquid cadmium cathode. The liquid cathode processing is necessary to separate cadmium from the actinide elements since the actinide deposits are dissolved or precipitated in a liquid cathode. Distillation process was employed for the cathode processing. It is very important to avoid a splattering of cadmium during evaporation due to the high vapor pressure. In this study, a multi-layer porous round cover was proposed and examined to develop a splatter shield for the Cd distillation crucible. Cadmium vapor can be released through the holes of the shield, whereas liquid drops can be collected in the multiple hemisphere. The collected drops flow on the round surface of the cover and flow down into the crucible. The crucible cover was fabricated and tested in the Cd distiller. The cover was made with three stainless steel round plates with a diameter of 33.50 mm. The distance between the hemispheres and the diameter of the holes are 10 and 1 mm, respectively. About 40 grams of Cd and about 4 grams of Bi was distilled at a reduced pressure for two hours at $470^{\circ}C$. After the Cd distillation experiment, cadmium was not detected and more than 90 % of Bi remained in the ICP-OES analysis. Therefore the crucible cover can be a candidate for the splatter shield of the Cd distillation crucible. Further development of the crucible cover is necessary for the decision of the optimum cover geometry and the operating conditions of the Cd distiller.

• 한국진공학회지
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• 제5권2호
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• pp.113-118
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• 1996

Aligning a cathode tip at the center of a gate hole is important in gated filed emission devices. We have fabricated a silicon field emitter using a following process so that a cathode and a gate hole are automatically aligned . After forming silicon tips on a silicon wafer, the wafer was covered with the $SiO_2$, gate metal, and photoresistive(PR) films. Because of the viscosity of the PR films, a spot where cathode tips were located protruded above the surface. By ashing the surface of the PR film, the gate metal above the tip apex was exposed when other area was still covered with the PR film. The exposed gate metal and subsequenlty the $SiO_2$ layer were selectively etched. The result produced a field emitter in which the gate film was in volcano shape and the cathode tip was located at the center of the gate hole. Computer simulation showed that the volcano shape and the cathode tip was located at the center of the gat hole. Computer simulation showed that the volcano shape emitter higher current and the electron beam which was focused better than the emitter for which the gate film was flat.